K4S643232E Search Results

Contextual Info: K4S643232E-TE/N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 3.3V Extended Temperature 86-TSOP Revision 1.4 December 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.4 (Dec. 2001)

K4S643232E

Contextual Info: K4S643232E-TI/P CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Industrial Temperature Revision 1.2 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.2 Oct. 2001 K4S643232E-TI/P

Contextual Info: K4S643232E-TI/P CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Industrial Temperature Revision 1.0 January 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Jan. 2001 K4S643232E-TI/P

Contextual Info: K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.0 October 2000 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Oct. 2000 K4S643232E CMOS SDRAM Revision History

K4S643232E

Contextual Info: K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.3 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 Oct. 2001 K4S643232E CMOS SDRAM Revision History

PPC823

Abstract: MGT5100 MT48LC16M16A2 AN2248 0X0054 MT48LC32M16A2 PPC8260 MT46V64M8 equivalent MT48LC2M32B2 MT46V32M16
Contextual Info: Application Note AN2248/D Rev. 1, 02/2002 Using the MGT5100 SDRAM Controller by Mark Jonas and Davide Santo Driver Information Systems Munich, Germany Introduction Synchronous Dynamic RAM SDRAM and Double Data Rate Synchronous Dynamic RAM (DDR-SDRAM or simply DDR) are among today’s preferred memories where

Contextual Info: K4S643233E-SE/N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 3.0V & 3.3V Extended Temperature 90-Ball FBGA Revision 1.5 April 2002 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.5 April 2002

IXF1002

Abstract: OR4E06 TADM042G5 TDAT042G5
Contextual Info: Quad Gb Ethernet Over SONET/SDH Bridge March 2003 IP Data Sheet • Robust 64-bit FIFO MAC interfaces with arbitration ■ Flexible flow control at ingress and egress. Software-provisioned flow control provided through MPU interface ■ SDRAM Controller with programmable

K4S643232E

Abstract: K4S643233E
Contextual Info: K4S643233E-SE N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.0V & 3.3V) Extended Temperature TSOP / 90Ball FBGA (V DD/V DDQ 3.0V/3.0V, 3.3V/3.3V) Revision 1.4 November 2001 Samsung Electronics reserves the right to change products or specification without notice.