54BALL Search Results

H9ccnnn

Abstract: H9CKNNNB H5MS1G22AFRE3M H5MS2G22MFR-J3M H5MS2G62 H55S2622JFR-60M H9TKNNN2GDMP-LRNDM DDR333 H5MS2G62AFR-J3M H5MS1G22AFR-E3M
Contextual Info: Page 1 DENSI TY ORG. SPEED PART NUMBER Package FEATURE Availability 2Gb 64M x 16 166MHz H55S2G62MFP-60M FBGA 54ball 4Bank, 1.8V/ 1.8V Now 133MHz H55S2G62MFP-75M FBGA(54ball) 4Bank, 1.8V/ 1.8V Now 166MHz H55S2G22MFP-60M FBGA(90ball) 4Bank, 1.8V/ 1.8V Now 133MHz

Contextual Info: 16Mx72 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M736BFU6 Series DESCRIPTION The HYM72V16M736BFU6 Series are 16Mx72bits Synchronous DRAM Modules. The modules are composed of five 16Mx16bits CMOS Synchronous DRAMs in 54ball FBGA package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin

microDIMM

Contextual Info: 8Mx72 bits PC100 SDRAM Unbuffered MicroDIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V8M755HC L FU6 Series DESCRIPTION The HYM71V8M755HCTU6 Series are 8Mx72bits Synchronous DRAM Modules. The modules are composed of five 8Mx16bits CMOS Synchronous DRAMs in 54ball FBGA package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin

Contextual Info: 128Mb Mobile RAM http://www.elpida.com Description Elpida Memory has unveiled a new family of synchronous DRAM, “Mobile RAM”. 128Mb Mobile RAM achieves low power consumption via three special low power functions, and extends the battery life in mobile applications. Additional advantages of 128Mb Mobile RAM are that it saves space in the system by the adoption of a 54ball FBGA Fine-pitch Ball Grid Array package, and that it offers a high-speed data transfer rate using pipeline architecture.

Contextual Info: SN54LVT16245B, SN74LVT16245B 3.3-V ABT 16-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS www.ti.com SCBS715D – FEBRUARY 2000 – REVISED FEBRUARY 2006 FEATURES • • • • • • • • • • Member of the Texas Instruments Widebus Family State-of-the-Art Advanced BiCMOS

SM81600E

Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

CMS3216LAF

Abstract: CMS3216LAG CMS3216LAH
Contextual Info: CMS3216LAx-75xx 32M 2Mx16 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3216LAx-75xx Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions

Contextual Info: CMS4A16LAx–75Ex 128M 8Mx16 Low Power SDRAM Revision 0.5 May. 2007 Rev. 0.5, May. ‘07 CMS4A16LAx–75Ex Document Title 128M(8Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1

LD374A

Contextual Info: SN74LVC16374A 16-BIT EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH 3-STATE OUTPUTS www.ti.com SCAS728A – OCTOBER 2003 – REVISED OCTOBER 2005 FEATURES • • • • • • • DGG, DGV, OR DL PACKAGE TOP VIEW Member of the Texas Instruments Widebus Family

74AVCB164245GRDR

Abstract: A115-A C101 SN74AVCB164245
Contextual Info: SN74AVCB164245 16-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS www.ti.com SCES394D – JUNE 2002 – REVISED JUNE 2005 • FEATURES • • • • • Member of the Texas Instruments Widebus Family DOC™ Circuitry Dynamically Changes Output

Contextual Info: SN74LVC16374A 16-BIT EDGE-TRIGGERED D-TYPE FLIP-FLOP WITH 3-STATE OUTPUTS www.ti.com SCAS728A – OCTOBER 2003 – REVISED OCTOBER 2005 FEATURES • • • • • • • DGG, DGV, OR DL PACKAGE TOP VIEW Member of the Texas Instruments Widebus Family

K4S641633F

Contextual Info: K4S641633F-R B L/N/P CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S641633F-R(B)L/N/P CMOS SDRAM 1M x 16Bit x 4 Banks SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.

IS42S16160D

Abstract: IS42S16160D-7TLI
Contextual Info: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed

K4S56163LC

Contextual Info: K4S56163LC-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.4 December. 2002 Rev. 1.4 Dec. 2002 K4S56163LC-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

K4S641633H-R

Contextual Info: K4S641633H - R B E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,

BFR15

Contextual Info: K4S64163LF-R B F/R CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-R(B)F/R CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

K4S561633C

Contextual Info: K4S561633C-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.

K4S561633F

Abstract: K4S561633F-X
Contextual Info: K4S561633F - X Z E/N/G/C/L/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

Contextual Info: K4M28163PF - R B G/F Mobile-SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the

Contextual Info: K4M64163PH - R B G/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M64163PH is 67,108,864 bits synchronous high data • LVCMOS compatible with multiplexed address. rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,

Contextual Info: SN54LVTH16244A, SN74LVTH16244A 3.3-V ABT 16-BIT BUFFERS/DRIVERS WITH 3-STATE OUTPUTS www.ti.com FEATURES • • • • • • • • • Members of the Texas Instruments Widebus Family State-of-the-Art Advanced BiCMOS Technology ABT Design for 3.3-V

Contextual Info: SN54LVTH162374, SN74LVTH162374 3.3-V ABT 16-BIT EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH 3-STATE OUTPUTS www.ti.com SCBS262M – JULY 1993 – REVISED NOVEMBER 2006 FEATURES • • • • • • • • • • • Members of the Texas Instruments Widebus

A115-A

Abstract: LVTH16245A SN54LVTH16245A SN74LVTH16245A
Contextual Info: SN54LVTH16245A, SN74LVTH16245A 3.3-V ABT 16-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS www.ti.com FEATURES • • • • • • • • • • • Members of the Texas Instruments Widebus Family State-of-the-Art Advanced BiCMOS Technology ABT Design for 3.3-V Operation