32MEG Search Results

IS42S16160D

Abstract: IS42S16160D-7TLI
Contextual Info: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet August 28, 2012 www.aeroflex.com/memories FEATURES  20ns Read, 10ns Write maximum access times available  Functionally compatible with traditional 1M, 2M and 4M

Contextual Info: ^EDI EDI9F416512C ELECTRONIC DESIGN5INC.I 4x512Kx16 SRAM Module 4x512Kx16 Static RAM CMOS, Module Features 4x512Kx16 bit CMOS Static The EDI9F416512C is a 32Megabit CMOS Static RAM Random Access Memory based on eight 512Kx8 Static RAMs mounted on a multi­

Contextual Info: WDI E D I7 F 3 3 IM C 32Megabit CMOS ELECTRONIC 0E9GNS INC. 5.0 Volt-only Sector Erase Flash Memory Module 1Megx32 Flash Module Features 5.0 Volt ±10% for read and write operations The EDI7F33IMC is an 32Mbit 5.0 volt-only Flash memory organized as a 1Megx32. The memory is divided into 16

ISSI 346

Abstract: DDR333 IS43R16320A
Contextual Info: ISSI IS43R16320A 32Meg x 16 512-MBIT DDR SDRAM MARCH 2006 FEATURES DEVICE OVERVIEW • • ISSI’s 512-Mbit DDR SDRAM achieves high-speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128M-bit to

IS42S16160G-5BL

Abstract: IS42S83200G IS42S16160G5BL
Contextual Info: IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg x 8, 16Meg x16 JANUARY 2013 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge

Contextual Info: IS42S83200B IS42S16160B ISSI 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM PRELIMINARY INFORMATION SEPTEMBER 2005 • Clock frequency: 166, 143 MHz OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed • Fully synchronous; all signals referenced to a

IS42S16160D-7T

Contextual Info: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 PRELIMINARY INFORMATION JULY 2008 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed

IS45S16320B

Contextual Info: IS45S16320B 32Meg x 16 512-MBIT SYNCHRONOUS DRAM PRELIMINARY INFORMATION OCTOBER 2007 • Clock frequency: 133 MHz OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed • Fully synchronous; all signals referenced to a positive clock edge data transfer using pipeline architecture. All inputs and

RASH

Abstract: EDI7F33IMC EDI7F33IMC100BNC EDI7F33IMC120BNC EDI7F33IMC150BNC
Contextual Info: E D I7F33IM C W D I 32Megabit CMOS ELECTRONIC 0E9GNS INC. 5.0 Volt-only Sector Erase Flash Memory Module 1Megx32 Flash Module Features 5.0 Volt ±10% for read and write operations The EDI7F33IMC is an 32Mbit 5.0 volt-only Flash memory organized as a 1Megx32. The memory is divided into 16

Contextual Info: ^EDI ED I4F3232F ED I4F3632F 32Megx32/32Megx36 High Density DRAM SIMM Features 32 Megx32/32Megx36 High Density DRAM Simm Density "Doubler" The EDI4F3232F and EDI4F3632F are organized as 32 Meg x 32 and 32 Meg x 36 respectively. Both modules are • 32Meg x 32 and 32 Meg x 36 organization

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Data Sheet January, 2013 www.aeroflex.com/memories INTRODUCTION The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high performance CMOS static RAM multichip modules MCMs

Contextual Info: IS42R83200D, IS42R16160D IS45R83200D, IS45R16160D 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM FEATURES •฀ Clock฀frequency:฀133,฀100฀฀MHz •฀ Fully฀synchronous;฀all฀signals฀referenced฀to฀a฀ positive clock edge MARCH 2010 OVERVIEW

Contextual Info: EDI4G7332EV 32 Megx72 ECC a High Density DRAM DIMM 32Megx72 High Density DRAM DIMM Features The EDI4G7332EV is an industry standard 168-Pin 8-byte Dual In-Line Memory Module DIMM which is configured as a 32 Meg x 72 for ECC applications. The module is well

s29gl032m10tair

Contextual Info: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics

IS42S83200D

Abstract: IS42S16160D
Contextual Info: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 DECEMBER 2011 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed

IS42S83200B

Abstract: IS42S16160B IS42S16160B-6TLI IS42S16160B-6TL 42X16
Contextual Info: IS42S83200B IS42S16160B 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM SEPTEMBER 2008 • Clock frequency: 166, 143, 133 MHz OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed • Fully synchronous; all signals referenced to a positive clock edge data transfer using pipeline architecture. All inputs and

IS45S16160G-6TLA1

Abstract: IS42S83200G-7TL is42s16160g-7tli IS45S16160G-7TLA1
Contextual Info: IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg x 8, 16Meg x16 ADVANCED INFORMATION DECEMBER 2010 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge

Contextual Info: IS42S83200B IS42S16160B ISSI 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM PRELIMINARY INFORMATION JANUARY 2006 • Clock frequency: 166, 143 MHz OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed • Fully synchronous; all signals referenced to a

is42s16160d-7bli

Abstract: IS42S16160D-7BL IS42S16160D-7TLI IS42S16160D-6B IS42S16160D-6BLI IS45S16160D-7BLA1 IS42S16160D-7T IS42S83200D-7TLI IS42S16160D-75ETL IS42S16160D_7TLI
Contextual Info: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 DECEMBER 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed

IS42S83200G

Abstract: IS42S16160G-5BL
Contextual Info: IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg x 8, 16Meg x16 MARCH 2013 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge

IS42S16160D

Abstract: IS42S16160D-7TL is42s16160d-7tli IS45S16160D-7BLA1 IS42S16160D-7BL IS42S83200D-75EBL IS42S83200D is42s16160d-7bli is42s83200d-6tli IS42S83200D-7TLI
Contextual Info: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 APRIL 2010 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed

45VS16160D

Abstract: is45vs16160d T 105 M1
Contextual Info: IS42VS83200D, IS42VS16160D IS45VS83200D, IS45VS16160D 32Meg x 8, 16Meg x16 PRELIMINARY INFORMATION MAY 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 133, 125 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW

Contextual Info: UGE32D6686LL Data sheets can be downloaded at www.unigen.com 256M Bytes 32M x 64 bits SYNCHRONOUS DRAM MODULE 172 Pin DDR SDRAM Unbuffered MicroDIMM based on 4 pcs 32M x 16 DDR SDRAM 8K Refresh FEATURES • • • • • • • 256MB (32Meg X 64) Quad internal banks operation