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    K4S641633H-R

    Contextual Info: K4S641633H - R B E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,


    Original     		k4s641633h16bit54fbgak4s641633h-r PDF

    K4M56163PG

    Abstract: 54-FBGA
    Contextual Info: K4M56163PG - R B E/G/C/F Mobile SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M56163PG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		k4m56163pg16bit54fbga54-fbga PDF

    Contextual Info: K4M51153LE - Y P C/L/F Mobile-SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4M51153LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		k4m51153le16bit54fbga54baller PDF

    k4m641633

    Abstract: K4M641633K 54balls
    Contextual Info: K4M641633K - R B N/G/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4M641633K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,


    Original     		k4m641633k16bit54fbgak4m641633+154balls PDF

    K4M51163LE

    Contextual Info: K4M51163LE - Y P C/L/F Mobile-SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4M51163LE is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		k4m51163le16bit54fbga PDF

    K4M28163LF

    Contextual Info: K4M28163LF - R B E/N/S/C/L/R Mobile-SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4M28163LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits,


    Original     		k4m28163lf16bit54fbga PDF

    K4M56163PE-R

    Contextual Info: K4M56163PE - R B G/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M56163PE is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design make a device controlled precisely


    Original     		k4m56163pe16bit54fbgak4m56163pe-r PDF

    K4S64163LH

    Contextual Info: K4S64163LH - R B E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4S64163LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,


    Original     		k4s64163lh16bit54fbga PDF

    K4M511633C

    Contextual Info: K4M511633C - R B N/G/L/F Mobile SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4M511633C is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,


    Original     		k4m511633c16bit54fbga PDF

    K4M28163LH

    Contextual Info: K4M28163LH - R B N/G/L/F Mobile SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4M28163LH is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,098,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		k4m28163lh16bit54fbga PDF

    K4S51153LF

    Abstract: K4S51153
    Contextual Info: K4S51153LF - Y P C/L/F Mobile SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. The K4S51153LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,


    Original     		k4s51153lf16bit54fbgak4s51153 PDF

    K4S511533F

    Abstract: k4s511533f-y
    Contextual Info: K4S511533F - Y P C/L/F Mobile SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,


    Original     		k4s511533f16bit54fbgak4s511533f-y PDF

    K4M64163PK

    Contextual Info: K4M64163PK - R B E/G/C/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M64163PK is 67,108,864 bits synchronous high data • LVCMOS compatible with multiplexed address. rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,


    Original     		k4m64163pk16bit54fbga PDF

    K4M64163LK

    Contextual Info: K4M64163LK - R B N/G/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4M64163LK is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		k4m64163lk16bit54fbga PDF

    K4M511533E

    Abstract: K4M511533E-Y
    Contextual Info: K4M511533E - Y P C/L/F Mobile-SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 3.0V or 3.3V power supply. The K4M511533E is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,


    Original     		k4m511533e16bit54fbgak4m511533e-y PDF

    K4M56163LG

    Abstract: 54bA
    Contextual Info: K4M56163LG - R B N/G/L/F Mobile SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4M56163LG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		k4m56163lg16bit54fbga54ba PDF

    BX-XX

    Abstract: 54-FBGA
    Contextual Info: K4M28163PH - R B E/G/C/F Mobile SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M28163PH is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,098,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		k4m28163ph16bit54fbgabx-xx+154-fbga PDF

    K4S56163PF

    Contextual Info: K4S56163PF - R B G/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4S56163PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		k4s56163pf16bit54fbga PDF

    K4S51153PF

    Contextual Info: K4S51153PF - Y P F Mobile SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • VDD/VDDQ =1.8V/1.8V. The K4S51153PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		k4s51153pf16bit54fbga PDF

    K4M51163LC

    Contextual Info: K4M51163LC - R B N/G/L/F Mobile SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • VDD/VDDQ = 2.5V/2.5V The K4M51163LC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		k4m51163lc16bit54fbga PDF

    Contextual Info: K4M51163PC - R B E/G/C/F Mobile SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • • • • The K4M51163PC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		k4m51163pc16bit54fbga PDF

    K4M561633G

    Contextual Info: K4M561633G - R B N/G/L/F Mobile SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4M561633G is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,


    Original     		k4m561633g16bit54fbga PDF

    K4M28163PF

    Abstract: K4M28163PF-R
    Contextual Info: K4M28163PF - R B G/F Mobile-SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		k4m28163pf16bit54fbgak4m28163pf-r PDF

    K4M281633F

    Contextual Info: K4M281633F - R B E/N/G/C/L/F Mobile-SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4M281633F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits,


    Original     		k4m281633f16bit54fbga PDF