K4S51153 Search Results

K4S51153 Datasheets (14)

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Samsung Electronics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
K4S511533F		Samsung Electronics		Original	PDF	107.44KB	12
K4S511533F-F1H		Samsung Electronics		Original	PDF	107.46KB	12
K4S511533F-F1L		Samsung Electronics		Original	PDF	107.44KB	12
K4S511533F-F75		Samsung Electronics		Original	PDF	107.44KB	12
K4S511533F-L		Samsung Electronics		Original	PDF	107.44KB	12
K4S511533F-YC		Samsung Electronics		Original	PDF	107.44KB	12
K4S51153LF		Samsung Electronics	8M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA	Original	PDF	107.9KB	12
K4S51153PF		Samsung Electronics		Original	PDF	107.08KB	12
K4S51153PF-YF		Samsung Electronics		Original	PDF	107.09KB	12
K4S51153PF-YF1L		Samsung Electronics		Original	PDF	107.08KB	12
K4S51153PF-YF75		Samsung Electronics		Original	PDF	107.09KB	12
K4S51153PF-YF90		Samsung Electronics		Original	PDF	107.07KB	12
K4S51153PF-YPF		Samsung Electronics		Original	PDF	107.08KB	12
K4S51153PF-YPF1L		Samsung Electronics		Original	PDF	107.08KB	12

K4S51153 Price and Stock

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Samsung Semiconductor


Samsung Semiconductor K4S511533F-YL75
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	K4S511533F-YL75		1,666			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor K4S51153LF-YL1L
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	K4S51153LF-YL1L		733			1 - 10 - 100 - 1000 - 10000 -	Get Quote

K4S51153 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K4S51153LF Abstract: K4S51153 Contextual Info: K4S51153LF - Y P C/L/F Mobile SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. The K4S51153LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,	Original	K4S51153LF 16Bit 54FBGA K4S51153	PDF
K4S51153LC Contextual Info: K4S51153LC-YG/S CMOS SDRAM 32Mx16 Mobile SDRAM 54CSP 2C/S VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, PASR & TCSR Revision 1.2 December 2002 Rev. 1.2 Dec. 2002 K4S51153LC-YG/S CMOS SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 2.5V power supply	Original	K4S51153LC-YG/S 32Mx16 54CSP 16Bit K4S51153LC 16bits,	PDF
K4S511533F Abstract: k4s511533f-y Contextual Info: K4S511533F - Y P C/L/F Mobile SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,	Original	K4S511533F 16Bit 54FBGA k4s511533f-y	PDF
Contextual Info: K4S51153LC-YG/S CMOS SDRAM 32Mx16 Mobile SDRAM 54CSP 2C/S VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, PASR & TCSR Revision 1.1 Aug 2002 Rev. 1.1 Aug. 2002 K4S51153LC-YG/S CMOS SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 2.5V power supply	Original	K4S51153LC-YG/S 32Mx16 54CSP 16Bit	PDF
Contextual Info: CMOS SDRAM K4S511533C-YL/N/P 32Mx16 Mobile SDRAM 54CSP 2/CS VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V Revision 1.2 December 2002 Rev. 1.2 Dec. 2002 CMOS SDRAM K4S511533C-YL/N/P 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 3.0V power supply The K4S511533C is 536,870,912 bits synchronous high data	Original	K4S511533C-YL/N/P 32Mx16 54CSP 16Bit A10/AP	PDF
K4S51153PF Contextual Info: K4S51153PF - Y P F Mobile SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • VDD/VDDQ =1.8V/1.8V. The K4S51153PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the	Original	K4S51153PF 16Bit 54FBGA	PDF
K4S51153LF Abstract: 64Mb samsung SDRAM Contextual Info: K4S51153LF - Y P C/L/F Mobile SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. The K4S51153LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,	Original	K4S51153LF 16Bit 54FBGA 64Mb samsung SDRAM	PDF
Contextual Info: K4S511533C-YL/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP 2/CS VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V Revision 1.0 July 2002 Rev. 1.0 July 2002 K4S511533C-YL/N/P CMOS SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 3.0V power supply The K4S511533C is 536,870,912 bits synchronous high data	Original	K4S511533C-YL/N/P 16Mx16 54CSP 16Bit	PDF
K4S511533C-YL Abstract: K4S511533C Contextual Info: K4S511533C-YL/N/P CMOS SDRAM 16Mx16 Mobile SDRAM 54CSP 2/CS VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V Revision 1.2 December 2002 Rev. 1.2 Dec. 2002 K4S511533C-YL/N/P CMOS SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 3.0V power supply The K4S511533C is 536,870,912 bits synchronous high data	Original	K4S511533C-YL/N/P 16Mx16 54CSP 16Bit K4S511533C 16bits, K4S511533C-YL	PDF
K8D3216UBC-pi07 Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM	Original	BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm	PDF