K4S51153 Search Results

K4S51153LF

Abstract: K4S51153
Contextual Info: K4S51153LF - Y P C/L/F Mobile SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. The K4S51153LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,

K4S51153LC

Contextual Info: K4S51153LC-YG/S CMOS SDRAM 32Mx16 Mobile SDRAM 54CSP 2C/S VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, PASR & TCSR Revision 1.2 December 2002 Rev. 1.2 Dec. 2002 K4S51153LC-YG/S CMOS SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 2.5V power supply

K4S511533F

Abstract: k4s511533f-y
Contextual Info: K4S511533F - Y P C/L/F Mobile SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,

Contextual Info: K4S51153LC-YG/S CMOS SDRAM 32Mx16 Mobile SDRAM 54CSP 2C/S VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, PASR & TCSR Revision 1.1 Aug 2002 Rev. 1.1 Aug. 2002 K4S51153LC-YG/S CMOS SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 2.5V power supply

Contextual Info: CMOS SDRAM K4S511533C-YL/N/P 32Mx16 Mobile SDRAM 54CSP 2/CS VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V Revision 1.2 December 2002 Rev. 1.2 Dec. 2002 CMOS SDRAM K4S511533C-YL/N/P 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 3.0V power supply The K4S511533C is 536,870,912 bits synchronous high data

K4S51153PF

Contextual Info: K4S51153PF - Y P F Mobile SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • VDD/VDDQ =1.8V/1.8V. The K4S51153PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the

K4S51153LF

Abstract: 64Mb samsung SDRAM
Contextual Info: K4S51153LF - Y P C/L/F Mobile SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. The K4S51153LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits,

Contextual Info: K4S511533C-YL/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP 2/CS VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V Revision 1.0 July 2002 Rev. 1.0 July 2002 K4S511533C-YL/N/P CMOS SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 3.0V power supply The K4S511533C is 536,870,912 bits synchronous high data

K4S511533C-YL

Abstract: K4S511533C
Contextual Info: K4S511533C-YL/N/P CMOS SDRAM 16Mx16 Mobile SDRAM 54CSP 2/CS VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V Revision 1.2 December 2002 Rev. 1.2 Dec. 2002 K4S511533C-YL/N/P CMOS SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM FEATURES GENERAL DESCRIPTION • 3.0V power supply The K4S511533C is 536,870,912 bits synchronous high data

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM