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    K4M51163LC Search Results

    K4M51163LC Datasheets (4)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    K4M51163LC
    Samsung Electronics 8M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF 112.88KB 12
    K4M51163LC-BN75
    Samsung Electronics 8M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF 112.89KB 12
    K4M51163LC-RG75
    Samsung Electronics 8M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF 112.88KB 12
    K4M51163LC-RN75
    Samsung Electronics 8M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF 112.88KB 12

    K4M51163LC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K4M51163LC

    Contextual Info: K4M51163LC - R B N/G/L/F Mobile SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • VDD/VDDQ = 2.5V/2.5V The K4M51163LC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original
    K4M51163LC 16Bit 54FBGA PDF