864BIT Search Results

te28f320b3bd70

Abstract: TE28F320B3TD flash device MARKing intel 28f016 28F008B3 28F016B3 28F160B3 28F320B3 28F640B3 28F800B3 76000-77FFF
Contextual Info: Intel£ Advanced Boot Block Flash Memory B3 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V – 3.6 V Read/Program/Erase — 12 V VPP Fast Production Programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O Option

TE28F320B3BD70

Abstract: TE28F320B3BD 28F008B3 28F016B3 28F160B3 28F320B3 28F640B3 28F800B3 TE28F320B3TD
Contextual Info: Intel£ Advanced Boot Block Flash Memory B3 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V VPP Fast Production Programming • 1.65 V–2.5 V or 2.7 V–3.6 V I/O Option

VA36

Contextual Info: Intel£ Advanced Boot Block Flash Memory B3 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V VPP Fast Production Programming • 1.65 V–2.5 V or 2.7 V–3.6 V I/O Option

28F008SA

Abstract: C1995 MCM28F064ACH 4F0000 6A0000 4D0000 76FFFF
Contextual Info: July 1995 MCM28F064ACH 64-Mbit 8-Mbit x 8 Flash Memory Module with Internal Decoding and Quiet Series I O Buffers General Description Features The MCM28F064ACH is a 67 108 864-bit flash memory module organized as 8 pages with 1 048 576 bytes per page Utilizing Intel’s FlashFileTM

JS28F160B3BD70

Abstract: flash device MARKing intel 28f016 te28F320B3BD70 BGA PACKAGE TOP MARK intel uBGA device MARKing intel GE28F160B3BC70 JS28F320B3BD70 intel BGA PACKAGE TOP MARK 28F016B3 28F160B3
Contextual Info: Intel Advanced Boot Block Flash Memory B3 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V V PP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option

Contextual Info: TMS465169, TMS465169P 4194304 BY 16ĆBIT EXTENDED DATA OUT DYNAMIC RANDOMĆACCESS MEMORIES SMHS566B − JUNE 1997 − REVISED APRIL 1998 DGE PACKAGE TOP VIEW D Organization . . . 4 194 304 by 16 Bits D Single 3.3-V Power Supply (± 0.3 V Tolerance) VCC

TMS464409

Abstract: TMS464409P TMS465409 TMS465409P R-PDSO-G32
Contextual Info: TMS464409, TMS464409P, TMS465409, TMS465409P 16 777 216 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMKS895A – MAY 1997 – REVISED OCTOBER 1997 D D D D D D D D D DGC PACKAGE TOP VIEW Organization . . . 16 777 216 by 4 Bits Single 3.3-V Power Supply

TMS465169

Abstract: TMS465169P
Contextual Info: TMS465169, TMS465169P 4194304 BY 16-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMHS566B – JUNE 1997 – REVISED APRIL 1998 D D D D D D D D D D DGE PACKAGE TOP VIEW Organization . . . 4 194 304 by 16 Bits Single 3.3-V Power Supply (± 0.3 V

TE28F320B3TD

Abstract: TE28F320B3BD70 GE28F160B3BC70 TE28F160B3BC70 TE28F320B3TD70 PH28F320 TE28F320B3BC70 TE28F320B3BD GE28F160B3BD70 te28f160b3ta90
Contextual Info: Intel Advanced Boot Block Flash Memory B3 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V VPP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option

28F008B3

Abstract: 28F016B3 28F160B3 28F320B3 28F640B3 28F800B3 TE28F320 8891h TE28F016B3TA110 TE28F800B3TA110
Contextual Info: 3-Volt Advanced Boot Block Flash Memory 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V VPP Fast Production Programming • 1.65 V–2.5 V or 2.7 V–3.6 V I/O Option

Contextual Info: TMS664414, TMS664814, TMS664164 4 194 304 BY 4ĆBIT/2 097 152 BY 8ĆBIT/1 048 576 BY 16ĆBIT BY 4ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORIES SMOS695A − APRIL 1998 − REVISED JULY 1998 D Organization . . . D D D D D D D D D D D Pipeline Architecture Single-Cycle

TMS664164

Abstract: TMS664414 TMS664814
Contextual Info: TMS664414, TMS664814, TMS664164 4 194 304 BY 4ĆBIT/2 097 152 BY 8ĆBIT/1 048 576 BY 16ĆBIT BY 4ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORIES SMOS695A − APRIL 1998 − REVISED JULY 1998 D Organization . . . D D D D D D D D D D D Pipeline Architecture Single-Cycle

Contextual Info: "H Y U N D A I - • HY57V654010 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y 57V654010 is a 6 7 ,1 0 8 ,864-bit C M O S Synchronous D RA M ideally suited for the main memory appli­ cations which require large memory density and high bandwidth. H Y 57V654010 is organized as 2banks of

TMS664164

Abstract: TMS664414 TMS664814
Contextual Info: TMS664414, TMS664814, TMS664164 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS695A – APRIL 1998 – REVISED JULY 1998 D D D D D D D D D D D D Organization . . . 1 048 576 x 16 Bits x 4 Banks

HY57V651620TC10

Contextual Info: C « « Y U IID A I > -• HY57V651620 4 Banks x 1 M x 1 6 Bit Synchronous ORAM DESCRIPTION The Hyundai HY57V651620 is a 67,108, 864-bit CMOS Synchronous DRAM, ideally suited for the main memory appli­ cations which require large memory density and high bandwidth. HY57V651620 is organized as 4banks of

TE28F160B3BC70

Abstract: TE28F320B3BD70 28F008B3 28F016B3 28F320B3 28F400B3 28F640B3 28F400 TE28F640B3BC100 TE28F320B3TD
Contextual Info: 3-Volt Advanced Boot Block Flash Memory 28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Preliminary Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V VPP Fast Production Programming • 1.65 V–2.5 V or 2.7 V–3.6 V I/O Option

X5460

Abstract: E5450 E5440 e5405 Platform Environment Control Interface PECI Spe E5410 E5420 MOTHERBOARD DIAGRAM X5470 L5410 E5430
Contextual Info: Quad-Core Intel Xeon® Processor 5400 Series Datasheet August 2008 318589-005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS

TMS465169

Abstract: TMS465169P
Contextual Info: TMS465169, TMS465169P 4194304 BY 16ĆBIT EXTENDED DATA OUT DYNAMIC RANDOMĆACCESS MEMORIES SMHS566B − JUNE 1997 − REVISED APRIL 1998 D Organization . . . 4 194 304 by 16 Bits D Single 3.3-V Power Supply ± 0.3 V DGE PACKAGE ( TOP VIEW Tolerance) D Performance Ranges:

TMS664164

Abstract: TMS664414 TMS664814
Contextual Info: TMS664414, TMS664814, TMS664164 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS695A – APRIL 1998 – REVISED JULY 1998 D D D D D D D D D D D D Organization . . . 1 048 576 x 16 Bits x 4 Banks