16MX16 Search Results

Contextual Info: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Pin Identification Description The TS32MSS64V6G Dynamic RAM TS32MSS64V6G is a high-density consists 32Mx64 memory of 8 Synchronous module. pieces of The Symbol CMOS Function A0~A12 Address inputs

M368L1624DTL

Contextual Info: M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.1 May. 2002 Rev. 0.1 May. 2002 M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE Revision History

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

K4S56163LC

Contextual Info: K4S56163LC-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.4 December. 2002 Rev. 1.4 Dec. 2002 K4S56163LC-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.

SAMSUNG MCP

Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
Contextual Info: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.

K4S561633C

Contextual Info: K4S561633C-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.

K4S561632C

Abstract: M464S1654CTS
Contextual Info: M464S1654CTS PC133/PC100 SODIMM M464S1654CTS SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S1654CTS is a 16M bit x 64 Synchro- • Performance range nous Dynamic RAM high density memory module. The Samsung M464S1654CTS consists of four CMOS 16M x 16 bit with

IS46R16160B

Abstract: zentel is43r16160b
Contextual Info: IS43R83200B, IS46R83200B IS43R16160B, IS46R16160B 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/

Contextual Info: M470L1624DT0 200pin DDR SDRAM SODIMM 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM 200pin SODIMM 64-bit Non-ECC/Parity Revision 0.1 Jan. 2002 Rev. 0.1 Jan. 2002 M470L1624DT0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (Dec. 2001) 1. First release.

Contextual Info: 200PIN DDR266 Unbuffered SO-DIMM 128MB With 16Mx16 CL2.5 TS16MSD64V6G Description Placement The TS16MSD64V6G is a 16M x 64bits Double Data Rate SDRAM high-density for DDR266.The TS16MSD64V6G consists of 4pcs CMOS 16Mx16 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil

M368L1624BT1

Abstract: PC200
Contextual Info: M368L1624BT1 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.9 June. 2001 Rev. 0.9 June. 2001 184pin Unbuffered DDR SDRAM MODULE M368L1624BT1 Revision History

nanya

Abstract: NT128S64VH4A0GM NT128S64VH4A0GM-75B NT128S64VH4A0GM-7K NT128S64VH4A0GM-8B
Contextual Info: NT128S64VH4A0GM 128MB : 16M x 64 SDRAM SODIMM 16Mx64 bit One Bank Small Outline SDRAM Module based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Features l l 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Programmable Operation:

K4S561633C

Abstract: K4S561633C-RL
Contextual Info: K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.7 December 2001 Rev. 0.7 Dec. 2001 K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).

HYM72V16M636AT6

Abstract: RA12
Contextual Info: 16Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M636AT6 Series DESCRIPTION The Hyundai HYM72V16M636AT6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

IS43DR83200A

Abstract: IS43DR16160A-3DBLI datasheet IS43DR16160A-37CBLI IS43DR83200A-37CBLI IS43DR32160A DDR2 x32
Contextual Info: IS43DR83200A IS43/46DR16160A, IS43DR32160A 32Mx8, 16Mx16, 16Mx32 stacked die DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O (SSTL_18-compatible) • Double data rate interface: two data transfers per clock cycle

IS42VM16160D-8TLI

Abstract: IS42VM83200D
Contextual Info: IS42VM83200D / IS42VM16160D / IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Advanced Information OCTOBER 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

Contextual Info: 32Mx64bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M656B L T6 Series DESCRIPTION The HYM72V32M656B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy

HY5DU561622CTP

Contextual Info: HY5DU561622CTP 256M 16Mx16 DDR SDRAM HY5DU561622CTP This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

pc133 SDRAM DIMM package

Abstract: HYM72V32M636BT6-H
Contextual Info: 32Mx64bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636B L T6 Series DESCRIPTION The HYM72V32M636B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP

Contextual Info: 16Mx64 bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M656B L T6 Series DESCRIPTION The HYM72V16M656B(L)T6 -Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 16Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 144-pin Zig Zag Dual pin glass-epoxy

Contextual Info: M464S3254BT1 PC133 SODIMM Revision History Revision 0 May, 2000 - PC133 First Published. Rev. 0 May. 2000 M464S3254BT1 PC133 SODIMM M464S3254BT1 SDRAM SODIMM 32Mx64 SDRAM SODIMM based on 16Mx16,4Banks,8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION

Contextual Info: M368L1624BTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 184pin Unbuffered DDR SDRAM MODULE M368L1624BTL Revision History

Contextual Info: 32Mx64bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V32M636C L T6 Series Document Title 32Mx64bits PC133 SDRAM SODIMM Revision History Revision No. History Draft Date 0.1 Initial Draft Feb. 2003 0.2 Defined IDD Spec.

SG564323578NW3R

Abstract: SM564323578NW3R
Contextual Info: SU564323578NW3R February 16, 2006 Ordering Information Part Numbers Description SM564323578NW3R 32Mx64 256MB , SDRAM, 144-pin SODIMM, Unbuffered, Non-ECC, 16Mx16 Based, PC133, CL 3.0, 31.75mm. SG564323578NW3R 32Mx64 (256MB), SDRAM, 144-pin SODIMM, Unbuffered, Non-ECC, 16Mx16 Based,