002G5 Search Results
002G5 Price and Stock
Omega Engineering PX309-002G5V0 TO 2 PSI, GAUGE, 0 TO 5 VDC, CABLE - Bulk (Alt: PX309-002G5V) |
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PX309-002G5V | Bulk | 0 Weeks, 6 Days | 1 |
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PX309-002G5V | Bulk | 1 |
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PX309-002G5V | Bulk | 3 Weeks | 1 |
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Omega Engineering PX319-002G5V0 TO 2 PSI, GAUGE, 0 TO 5 VDC, MINI DIN 43650 C - Bulk (Alt: PX319-002G5V) |
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PX319-002G5V | Bulk | 3 Weeks | 1 |
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Omega Engineering PX359-002G5V0 TO 2 PSI, GAUGE, 0 TO 5 VDC, M12 - Bulk (Alt: PX359-002G5V) |
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PX359-002G5V | Bulk | 2 Weeks | 1 |
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PX359-002G5V | Bulk | 1 |
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Samtec Inc YTE-150-02-G-5-750- Rail/Tube (Alt: YTE-150-02-G-5-750) |
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YTE-150-02-G-5-750 | Tube | 1 Weeks | 1 |
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YTE-150-02-G-5-750 | 1 |
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YTE-150-02-G-5-750 |
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Vishay Intertechnologies WR506170A1002G5100WR5 10K 2% A1 - Boxed Product (Development Kits) (Alt: WR506170A1002G5100) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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WR506170A1002G5100 | Box | 6 Weeks | 1,000 |
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002G5 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: PRELIMINARY 512K x 16, 1 MEG x 8 BOOT BLOCK FLASH MEMORY M IC R O N FLASH MEMORY MT28F800B1 martV o ltag e FEATURES • Eleven erase blocks: 16KB/8K-word boot block (protected Two 8KB/4K-word parameter blocks Eight main memory blocks • SmartVoltage Technology (SVT): |
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mt28f800b116kb/8k-word100ns110ns+4 | |
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Contextual Info: MITSUBISHI DIGITAL ASSP M66251L 5120 x 8-BIT LINE MEMORY (FIFO) DESCRIPTION The M66251L is a high-speed line memory with a FIFO (First In First Out) structure of 5120-word x 8-bit configuration which uses high-performance silicon gate CMOS process technology. |
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m66251l5120-word | |
Si9959DYContextual Info: Tem ic SÌ9959DY S e m ic o ndu c tor s Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V Id r D S(on) ( Q ) 60 (A) 0.30 @ V GS = 10 V ± 2 .0 0.50 @ V q s = 5 V ± 0 .6 For higher performance see SÌ9945DY D2 D2 Di Di V SO-8 Gi G2 oJt O Si Top View |
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9959dy9945dys-47958--rev15-apr-96+4 | |
Q205BContextual Info: PRELIMINARY I QUANTUM DEVlCfS. INC MT28F200B5 ET, MT28F400B5 ET, MT28F800B5 ET FLASH MEMORY Smart 5 Extended Temperature FEATURES PIN ASSIGNMENT Top View • Extended temperature range operation: -40°C to +85°C • Boot block architecture: 16KB/4K-word boot block (protected) |
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512kx16kb/4k-word128kb/64k-wordmt28f200b5+7 | |
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Contextual Info: O rdering num ber :-EN2924 2SC4256 No.2924 NPN Triple Diffused Planar Silicon Transistor 1200V/10mA High-Voltage Amp, High-Voltage Switching Applications F eatu res - High breakdown voltage - Small Cob • Wide ASO • High reliability Adoption of HVP process |
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-en29242sc4256200v/10ma100jia+5 | |
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Contextual Info: PIC16C7X M ic r o c h ip 8-Bit CMOS Microcontrollers with A/D Converter • Wide operating voltage range: 2.5V to 6.0V D evices included in th is d ata sheet: • PIC16C72 • PIC16C74A • High Sink/Source Current 25/25 mA • PIC16C73 • PIC16C76 • Commercial, Industrial and Extended temperature |
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pic16c7xpic16c72pic16c74apic16c73+5 | |
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Contextual Info: KM44C4003A, KM44C4103A CMOS DRAM 4M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4 ,1 94 ,3 0 4 x 4 bit Fast Page Mode Quad CAS DRAMs. Fast Page Mode offers high speed random access of memory cells within the. same row. Refresh cycle 2K Ref. or 4K Ref. , access |
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km44c4003akm44c4103a | |
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Contextual Info: SONY LCX012BL 3.3cm 1.3-inch Black-and-White LCD Panel Description The LCX012BL is a 3.3cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. Use of three panels in combination |
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lcx012blgg50575 | |
MV30101Contextual Info: GEC S PLESSEY ADVANCE INFORMATION i DSjbt>8 t 3 M V 3 0 1 0 -1 SUBSCRIBER LINE AUDIO CIRCUIT The MV3010-1 is a S u b scrib e r Line A udio C ircu it SLAC for use in su b scrib e r line ca rds in telephone exchanges or sim ilar equipm ent It perform s A/D and D/A conversion, adjusts the gain |
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mv3010-1100ms37bfis22mv30101 | |
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Contextual Info: MITSUBISHI DIGITAL ASSP M66252P/FP 1152 x 8-BIT LINE MEMORY (FIFO) DESCRIPTION The M66252P/FP is a high-speed line memory with a FIFO (First In First Out) structure of 1152-word x 8-bit configuration which uses high-performance silicon gate CMOS process |
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m66252p/fp1152-word1152words002g577 | |
KM44S4020AT10
Abstract: KM44S4020A
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km44s4020ag02054bkm44s4020at10 | |
GG2Q
Abstract: Dt7210
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idt72103idt7210450mhzpack75+4 | |
transistor 3005
Abstract: transistor 3005 2 CT60AM-20 transistor FS 20 SM L 3005 TRANSISTOR CT60AM20 transistor TO-220 Outline Dimensions K 4005 transistor resonant inverter ct FS 8201
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ct60am-2020maxt0-220smax240+14 | |
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Contextual Info: Ordering number : EN 4 5 4 8 A Thick Film Hybrid 1C _ STK4028II IsaH yoI AF Power Amplifier Split Power Supply (30W min, THD = 0.4%) Features Package Dimensions • Compact packaging supports slimmer set designs • S eries designed for 20 up to 200 W and pincompatibility |
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stk4028ii | |
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Contextual Info: w GEC PLESSEY A D V A N C E IN F O R M A T IO N S E M I C O N D U C T O R S SL377 SUBSCRIBER LINE INTERFACE CIRCUIT The SL377 is a Subscriber Line Interface Circuit SLIC for use at the telephone exchange or PABX end of a telephone line. It provides pow er feed, transm its and receives voice |
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sl377fl522 | |
KM48S2020A
Abstract: km48s2020at K/A8-A10 050S53 1994 sdram 002G5 D02g DD2054 samsung AND 1994 AND sdram
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km48s2020a0020sflskm48s2020atk/a8-a10+6 | |