KM44S4020AT
Abstract: 71142 a
Contextual Info: KM44S4020AT SDRAM 2M x 4Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL compatible with multiplexed address. • Dual Bank. • MRS cycle with address key programs. -. CAS Latency 1, 2, 3 -. Burst Length {1, 2, 4, 8 & Full page)
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KM44S4020AT
KM44S4020A
44S4020A
44-TS0P2-400F
44-TSOP2-400R
0Q3b25&
71142 a
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KM44S4020AT10
Abstract: KM44S4020A
Contextual Info: PRELIMINARY KM44S4020A 4M X CMOS SDRAM 4 BIT SYNCHRONOUS DYNAMIC RAM GENERAL DESCRIPTION FEATURES - JEDEC standard 3.3V power supply. - LVTTL compatible with multiplexed address. - Dual bank / Pulse ftAS. - WCBR cycle with address key programs. • Latency Access from column address
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KM44S4020A
KM44S4020A
G02054b
KM44S4020AT10
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hy57v16801
Abstract: KM48S2020 FCT3932 KM44S4020 nec 44pin AN-156 FCT163501 KM48S HY57V16401-10 DIMM 72 pin out
Contextual Info: 2M/4M x 72 SYNCHRONOUS DRAM DIMM REFERENCE DESIGN APPLICATION NOTE AN-156 Integrated Device Technology, Inc. By Anupama Hegde INTRODUCTION DESIGN KIT CONTENTS Expectations of main memory performance have finally reached a point that calls for the use of synchronous DRAMs.
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AN-156
200pin
4Mx72
A0-11
DQ0-72
hy57v16801
KM48S2020
FCT3932
KM44S4020
nec 44pin
AN-156
FCT163501
KM48S
HY57V16401-10
DIMM 72 pin out
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IBM025161LG5D60
Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.
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MB81141621
MB81141622
MB81G8322
MB81116421
TC59R1608
2ns500MHz
TC59R0808
IBM025161LG5D60
gm72v16821
MD908
KM48S2020
TC59R1809
GM72V1682
KM4232W259Q60
KM416S1120A
IBM025171LG5D-70
KM44S4020AT
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