0017FLIN Search Results

SI7660CJ

Abstract: SI7660DJ Si7660 SI7660DY Si7660s VL VM VH lithium si-7660dj
Contextual Info: Si7660 Siliconix A M em ber o f the T b m ic G roup Switched-Capacitor Voltage Converter Features Benefits Applications • 99.7% Open Circuit Voltage Conversion Efficiency • 98% Power Efficiency • Operating Voltage Range of 1.5 to 10 V • Requires Only Two Capacitors

Contextual Info: SI9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control 1C FEATURES • • • • • • Over-Charge Protection Over-Discharge Protection Short Circuit Current Limiting Battery Open-Circuit Center Tap Protection Cell Voltage Balancing Undervoltage Lockout

si9710

Abstract: Si9710CY
Contextual Info: Tem ic SÌ9710CY Siliconix PCMCIA Interface Switch Features • Single SO-16 Package • CMOS Inputs with Hysteresis • Extremely Low Rqn • Reverse Blocking Switches • HiZ Outputs in the Off-State • Low Power Consumption • Safe Power-Up Description

SO-8 gs 069

Contextual Info: T e m ic SÌ9945DY Semiconductors Dual N-Channel Enhancement-Mode MOSFET Product Summary V DS V 60 rDS(on) (fi) I d (A) 0.10 @ VGS = 10 V ±3.3 0.20 @ VGS = 4.5 V ±2.5 Di u D2 D2 D! SO-8 G, Top View G2 Ô Ô Si S2 N-Channel MOSFET N-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

VDS16

Abstract: D-16 Si6943DQ Si9934DY 5121 M
Contextual Info: Tem ic SÌ9933DY S e m i c o n d u c t o r s Dual P-Channel Enhancement-Mode MOSFET Product Summary VDs V -20 r DS(on) (£2) I d (A) 0.11 @ VGs = -+-5 v ±3.4 0.15 @VGS =-3.0 V ±2.9 0.19 @ VGs = -2.7 V ±2.6 Recommended upgrade: Si9934DY Lower profile/smaller size— see LITE FOOT equivalent: Si6943DQ

Contextual Info: Tem ic SÌ9407DY Semiconductors P-Channel Enhancement-Mode MOSFET Product Summary VDs V n>S(on) (£2) 0.150 @ VGS = -10 V 0.240 @ Vos = -4.5 V -60 I d (A) ±3.0 ±2.4 sss in SO-8 'n T mi XI X ID S IX S IX s IX H G [T Top View D DD D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

Contextual Info: Tem ic SÌ9405DY Se m ic o n d u c to r s P-Channel Enhancement-Mode MOSFET Product Summary V d s V rDS(on) (Q ) 20 I d (A) 0.10 @ VGS = -1 0 V ±4.3 0.16 @ Vc s = -4.5 V ±3.4 Recommended upgrade: Si9430DY Lower profile/smaller size— see LITE FOOT equivalent: Si6447DQ

Si9959DY

Contextual Info: Tem ic SÌ9959DY S e m ic o ndu c tor s Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V Id r D S(on) ( Q ) 60 (A) 0.30 @ V GS = 10 V ± 2 .0 0.50 @ V q s = 5 V ± 0 .6 For higher performance see SÌ9945DY D2 D2 Di Di V SO-8 Gi G2 oJt O Si Top View

9915 H

Abstract: si9905 si9912
Contextual Info: SILICONIX INC HWSÏÏSHi 33E J> WÊ Ô254735 0Glbl37 3 « S I X Si9905/Si9912/Si9915 Off Line Voltage Regulators 58-lN-O FEATURES APPLICATIONS END PRODUCTS • Line Regulation ± 2 % @ 50-450 V • Load Regulation ± 1 % @ 0-20 V • Motor Drives • Power Supplies

70003 fb

Abstract: transistor 70003 fb
Contextual Info: SÌ9105 Vishay Siliconix 1-W High-Voltage Switchmode Regulator FEATURES • CCITT Compatible • Current-Mode Control • Low Power Consumption less than 5 mW • 10- to 120-V Input Range • 200-V, 250-mA MOSFET • Internal Start-Up Circuit • Current-Mode Control

L110i

Abstract: MOSFET 20 NE 50 Z R9913
Contextual Info: _ Si9140 Vishay S iliconix SMP Controller For High Performance Process Power Supplies FEATURES • Runs on 3.3- or 5-V Supplies • Adjustable, High Precision Output Voltage • High Frequency Operation >1 MHz

Contextual Info: Tem ic SÌ9902DY S e m i co n d u c t o r s Asymmetrical Dual N-Channel Enhancement-Mode MOSFET Product Summary fDS on ( ^ ) I d (A) 0.07 @ VGs = 4.5 V ± 3 .0 0.09 @ VGs = 2.5 V ±2.1 0.03 @ VGS = 4.5 V ±6.9 0.035 @ VGs = 2.5 V ± 4.9 V d s (V) N-Channel 1

Contextual Info: Tem ic SÌ9944DY S e m i c o n d u c t o r s Dual N-Channel Enhancement-Mode MOSFET Product Summary V d s V 240 r D S(on) ( ^ ) I d (A ) 6 @ V GS = 10 V ± 0 .4 8 @ V GS = 4 .5 V ± 0 .3 Di Di Q Q D2 D2 Q Q SO-8 G2 O Si Top View <JÌ o S2 N-Channel MOSFET

Contextual Info: Tem ic SÌ9955DY S e m ic on duc to rs Dual N-Channel Enhancement-Mode MOSFET Product Summary V DS V rDS(on)(ß) Id (A) 50 0.13 @ VGS= 10V 0.20 @ VGS = 4.5V ± 3.0 ± 1.5 Recommended upgrade: SÌ9945DY Di D, D2 D2 V SO-8 Si I X X I Di Gi I X s2 X X D' ~6~1 D2

t1d6

Abstract: Si9948DY
Contextual Info: Tem ic SÌ9948DY S e m ic o ndu c to r s Dual P-Channel Enhancement-Mode MOSFET Product Summary V d s V rDS(on) (Q ) I d (A ) 0.28 @ VGS = -1 0 V ± 2 .0 0.50 @ V Gs = -4 .5 V ± 1 .6 -6 0 Si Q SO-8 X I D, T1 D, 6 1 Ü2 [T [T s2 [T G2 1 4 Si Gi ~ n G2 G ì O- >|— f

Contextual Info: SÌ9910 Vishay S iliconix Adaptive Power MOSFET Driver3 FEATUR ES • dv/dt and di/dt Control • Undervoltage Protection • Short-Circuit Protection trr Shoot-Through Current Limiting Low Q uiescent Current CMOS Compatible Inputs Compatible with Wide Range of

si9940dy

Abstract: D-16
Contextual Info: Tem ic SÌ9940DY S e m ic o ndu c tor s Dual N-Channel Enhancement-Mode MOSFET Product Summary V d s V 50 r DS(on) (£2) I d (A) 0.05 @ V qs = 10 V ±5.3 0.07 @ V qs = 4.5 V ±4.5 SO-16* Di D j D j D2 D2D2 tu n Si Top View S2 S2 Si N-Channel MOSFET N-Channel MOSFET