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    VDS16 Search Results

    VDS16 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    SN65LVDS16DRFT
    Texas Instruments 2.5-V/3.3-V Oscillator Gain Stage/Buffer with Enable 8-WSON -40 to 85 Visit Texas Instruments Buy
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    VDS16 Price and Stock

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    Rochester Electronics LLC SN65LVDS16DRFT

    SN65LVDS16 2.5-V/3.3-V OSCILLATO
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    DigiKey SN65LVDS16DRFT Bulk 28,200 66
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    • 100 $4.58
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    Rochester Electronics LLC SN65LVDS16DRFR

    PECL TO LVDS TRANSLATOR
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    DigiKey SN65LVDS16DRFR Bulk 400 113
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    Texas Instruments BLVDS16EVK

    EVAL BOARD FOR DS92LV16
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    DigiKey BLVDS16EVK Box 1
    • 1 $423.75
    • 10 $423.75
    • 100 $423.75
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    Vyrian BLVDS16EVK 3,770
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    Texas Instruments SN65LVDS16EVM

    EVAL BOARD FOR SN65LVDS16
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    DigiKey SN65LVDS16EVM Bulk 1
    • 1 $52.31
    • 10 $52.31
    • 100 $52.31
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    Vyrian SN65LVDS16EVM 4,446
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    Texas Instruments SN65LVDS16DRFR

    IC REDRIVER 1CH 4GBPS 8WSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SN65LVDS16DRFR Tape & Reel 3,000
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    Rochester Electronics SN65LVDS16DRFR 400 1
    • 1 -
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    • 100 $2.01
    • 1000 $1.80
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    VDS16 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TOSHIBA 2SK2549 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2549 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 1.6MAX. • -•1-0.4 + 0.05


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    2SK2549 200//A) PDF

    Contextual Info: HARRIS SENICOND SECTOR m HARRIS SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL9230 D, R, H SflE D • 4305271 0045787 540 H H A S 2N7311D, 2N7311H 2N7311H Radiation Hardened P-Channel Power MOSFETs December 1992 l ° l Package Features • 3A, -200V, RDS(on) > 1.30Q


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    FRL9230 2N7311D, 2N7311H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    Contextual Info: SFR/U9210 Advanced Power MOSFET FEATURES BVdss = -200 V • Avalanche Rugged Technology ■ ■ ■ Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA Max. @ VDS = -200V


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    -200V SFR/U9210 PDF