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Contextual Info: Tem ic SÌ9902DY S e m i co n d u c t o r s Asymmetrical Dual N-Channel Enhancement-Mode MOSFET Product Summary fDS on ( ^ ) I d (A) 0.07 @ VGs = 4.5 V ± 3 .0 0.09 @ VGs = 2.5 V ±2.1 0.03 @ VGS = 4.5 V ±6.9 0.035 @ VGs = 2.5 V ± 4.9 V d s (V) N-Channel 1 |
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9902DY DQ213SG S-46755-- 15-Jan-96 S2SM735 0017flin |