KM48C Search Results

C2004A

Abstract: KM48C2104A C2104A C2104 km48v2104a
Contextual Info: KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply

EE-19 N

Abstract: EE-218
Contextual Info: KM48C512B, KM48V512B CMOS DRAM 512K x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KM48C512LL CMOS DRAM 512Kx8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C512LL is a CMOS high speed 524,288 b itx 8 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM48C8004AS CMOS DRAM ELECTR O NICS 8 M x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , package

Contextual Info: KM48C128 CMOS DRAM 128K x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 131,072 x 8 bit Fast Page M ode CM O S DRAMs. Fast Page M ode offers high speed random access of m em ory cells w ithin the sam e row. A ccess tim e 55, 60, or 70 and pow er consum ption

Contextual Info: KM48C514D, KM48V514D CMOS DRAM 512Kx 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time(-5,-6,-7), power consumption(Normal or Low

Contextual Info: KM48C2004BK CMOS D R A M ELECTRONICS 2 M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: KM48C514B, KM48V514B CMOS DRAM 5 1 2 K x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KM48C514DJ CMOS DRAM 5 1 2 K x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family o1 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

MS3467

Abstract: a9ce 31DQ3
Contextual Info: KM48C514B, KM48V514B CMOS DRAM 5 1 2 K x 8 B i t CM O S Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

A10CE

Abstract: OYNN KM48C2104B km4e KM48V2104B
Contextual Info: KM48C2004B, KM48C2104B KM48V2004B, KM48V2104B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fa m ily of 2,097,152 x 8 bit Extended Data Out CM OS DRAMs. Extended Data O ut M ode offers high speed random access of m em ory cells w ithin the sam e row, so called H yper Page Mode. Power

Contextual Info: High Speed KM48C512D CMOS DRAM High Speed 512K x 8Bit CMOS Dynamic RAM with with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -4 , power consumption(Normal or Low power) and package type(SOJ or TSOP-II)

Contextual Info: KM48C512B, KM48V512B CMOS DRAM 5 1 2 K x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

31DQ6

Abstract: 31DQ5
Contextual Info: KM48C8004B, KM48C8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref , access time (-45, -5 or -6), package type (SOJ or TSOPII) are optional features of this family. All of this family have CAS-before-RAS refresh, f?AS-only refresh and Hidden refresh capabilities

Contextual Info: KM48C2000A, KM48C2100A KM48V2000A, KM48V2100A CMOS ORAM 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2 ,097,152 x 8 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or + 3 .3 V , refresh

Contextual Info: KM48C8000B, KM48C8100B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 8,388,608 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), package type (SOJ or TSOP-II) are optional features

Contextual Info: KM48C512DT CMOS DRAM 5 1 2 K x 8 B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply

Contextual Info: KM48C512LL CMOS DRAM 512K x8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C512LL is a CMOS high speed 524,288 bit x 8 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM48C2000A/AL/ALL/ASL CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC KM48C2Q00A/AL'ALL;AS L- : 50ns 13ns 90ns KM48C2000A'AL'ALL'ASL-S 60ns 15ns 110ns KM48C2000A''AL/A L L -3 L *r

Contextual Info: PRELIMINARY KM48C512 CMOS DRAM 5 1 2 K X 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 48C512 is a CMOS 5 2 4 ,2 8 8 bit X 8 Dynamic Random Access design is optimized for high performance such as personal computer, graphics and

Contextual Info: KM48C512DT CMOS DRAM ELECTRONICS 5 1 2 K x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KM48C2000A, KM48C2100A KM48V2000A, KM48V21OOA CMOS DRAM 2 M x 8 B i t CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: CMOS DRAM KM48C512/L/SL 512K x8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C512/L/SL is a CMOS high speed 524,288 bit x 8 Dynamic Random Access Memory. Its design is optimized for high performance applications