48C512 Search Results

Contextual Info: PRELIMINARY 48C512 CMOS DRAM 5 1 2 K X 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 48C512 is a CMOS 5 2 4 ,2 8 8 bit X 8 Dynamic Random Access design is optimized for high performance such as personal computer, graphics and

Contextual Info: EEPROMS 48C512/ 48C1024 512 K/1024 K FLASH EEPROM July 1987 ADVANCE DATA S H EET Features • 64K/128K Byte Writable Non-Volatile Memory ■ Low Power CMOS Process ■ Electrical Chip and Block Erase • 7.5 Second Maximum Erase Time ■ Electrical Byte Write

Contextual Info: KM48V512DT CMOS DRAM 512 K x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

48C1024

Contextual Info: M 4 8 C 5 1 2 / 4 8 C 1 0 2 4 5 1 2 K / 1 0 2 4 K F L A S H " E E P R O M ADVANCE DATA SH EET duty 1987 Features • 64K/128K Byte Writable non-volatile memory ■ Low Power CMOS Process ■ Electrical Chip and Block Erase • 7.5 Second Maximum Erase Time

KM48C512DJ

Abstract: G0353
Contextual Info: K M 4 8 C 5 12 D J CMOS DRAM 512K x 8 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: 48C512DT CMOS DRAM 5 1 2 K x 8 B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: 48C512DT CMOS DRAM ELECTRONICS 5 1 2 K x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

01404

Abstract: SEEQ TECHNOLOGY 48C1024
Contextual Info: SEEÖ S1 19233 TECHNOLOGY SEEQ TECHNOLOGY INC Tö Ô Ë J 011^233 INC □ □ □ 1 3 cî h 98D 0 1396 M DJ~Q6-I3'Z1 4 8 C 5 1 2 /4 8 C 1 0 2 4 5 1 2 K /1 0 2 4 K F L A S H E E P R O M J u ly 1 98 7 A D V A N C E JJATA S H E E T Features • 64K/128K Byte Writable non-volatile memory

Contextual Info: KM48C5 1 2DJ CMOS D R AM ELECTRONICS 5 1 2 K x 8 B i t CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

NEC D2732

Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
Contextual Info: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

48C1024

Abstract: 48C512
Contextual Info: SEE 2 TECHNOLOGY 8119233 SEEQ TECHNOLOGY INC Tfl "deJ 011^233 ooDina s J - INC 98D 01198 DT-4fc~/3-r7 4 8 C 5 12 / 4 8 C 1 0 2 4 5 1 2 K /1 0 2 4 K FLASH EEPROM July 1 987 A D V A N C E D A TA S H E E T Features • 64K /128K B yte Writable Non-Volatile Memory

corrosion

Abstract: Mecatraction JUPITER e series connector MS JUPITER e series connector E44-E43 CM-501-MS MSH Connectors MSH 14 Connectors burndy GROUNDING CONNECTORS RG302
Contextual Info: MSH/MPH series Connectors Connectors for for navy navy applications applications and and heavy heavy duty duty industries industries MSH/MPH series Connectors and interconnect systems for harsh environments The company designs, manufactures and markets high performance interconnect solutions for severe environments

Samsung Capacitor sms

Contextual Info: PRELIMINARY 48C512 CMOS DRAM 512K X 8 Bit C M O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 48C 512 is a CMOS 5 2 4 ,2 8 8 bit X 8 Dynamic Random Access design is optimized for high performance such as personal computer, graphics and