48C1024 Search Results

Contextual Info: EEPROMS 48C512/ 48C1024 512 K/1024 K FLASH EEPROM July 1987 ADVANCE DATA S H EET Features • 64K/128K Byte Writable Non-Volatile Memory ■ Low Power CMOS Process ■ Electrical Chip and Block Erase • 7.5 Second Maximum Erase Time ■ Electrical Byte Write

48C1024

Contextual Info: M 4 8 C 5 1 2 / 4 8 C 1 0 2 4 5 1 2 K / 1 0 2 4 K F L A S H " E E P R O M ADVANCE DATA SH EET duty 1987 Features • 64K/128K Byte Writable non-volatile memory ■ Low Power CMOS Process ■ Electrical Chip and Block Erase • 7.5 Second Maximum Erase Time

01404

Abstract: SEEQ TECHNOLOGY 48C1024
Contextual Info: SEEÖ S1 19233 TECHNOLOGY SEEQ TECHNOLOGY INC Tö Ô Ë J 011^233 INC □ □ □ 1 3 cî h 98D 0 1396 M DJ~Q6-I3'Z1 4 8 C 5 1 2 /4 8 C 1 0 2 4 5 1 2 K /1 0 2 4 K F L A S H E E P R O M J u ly 1 98 7 A D V A N C E JJATA S H E E T Features • 64K/128K Byte Writable non-volatile memory

48C1024

Abstract: 48C512
Contextual Info: SEE 2 TECHNOLOGY 8119233 SEEQ TECHNOLOGY INC Tfl "deJ 011^233 ooDina s J - INC 98D 01198 DT-4fc~/3-r7 4 8 C 5 12 / 4 8 C 1 0 2 4 5 1 2 K /1 0 2 4 K FLASH EEPROM July 1 987 A D V A N C E D A TA S H E E T Features • 64K /128K B yte Writable Non-Volatile Memory