130NS Search Results

ta25 du14

Contextual Info: ST1641OOOAG1 -xxLVG 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *R A C *C A C ‘ rc STI. •-60LVG 60ns 15ns 110ns STI. •-70LVG 70ns 20ns 130ns STI. •-80LVG 80ns 20ns 150ns The Simple Technology STI641000AG1 is a 1M x 64 bits

jeida+dram+88+pin

Abstract: jeida 88 pin jeida dram 88 pin
Contextual Info: STI321000C1 -xxVx 88-PIN CARDS 1M X 32 DRAM Card FEATURES • Performance range: ^RAC ^CAC *RC STI321000C1-60Vx 60ns 15ns 110ns STI32100OC1-7OVx 70ns 18ns 130ns STI321000C1-80Vx 80ns 20ns 150ns The Simple Technology STI321000C1 is a 1M bit x 32 Dynamic RAM high density memory card. The Simple Technology

jeida dram 88 pin

Abstract: STI324000C1
Contextual Info: STI324000C1 -X X V 88-PIN CARDS 4M X 32 DRAM Card FEATURES • GENERAL DESCRIPTION Performance range: ^RAC Wc *RC STI324000C1 -60V 60ns 15ns 110ns STI324000C1-70V 70ns 20ns 130ns The Simple Technology STI324000C1 is a 4M bil x 32 Dynamic RAM high density memory card. The Simple Technology

Contextual Info: STI368003 72-PIN SIMMS 8M X 36 BITS DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI368003-60 60ns 15ns 110ns STI368003-70 70ns 20ns 130ns • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability

Contextual Info: STI721005D1 -xxVG 168-PIN DIMMS 1M X 72 Bit DRAM DIMM with FPM and ECC Optimized FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC *RC *PC STI.-60VG 60ns 20ns 110ns 40ns STI.-70VG 70ns 25ns 130ns 45ns The Simple Technology STI721005D1-xxVG is a 1M x 72 bit

Contextual Info: STI338000 72-PIN SIMMS 8M X 33 Bits DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC I rc STI338000-60 60ns 15ns 110ns STI338000-70 70ns 20ns 130ns STI338000-80 80ns 20ns 150ns The Simple Technology STI338000 is a 8M x 33 bits Dynamic

Contextual Info: STI32256 72-PIN SIMMS 256K X 32 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI32256-60 60ns 15ns 110ns STI32 2 56-70 70ns 20ns 130ns STI32256-80 80ns 20ns 150ns The Simple Technology STI32256 is a 256K bit x 32 Dynamic

TDC1009J

Abstract: TDC1009 TDC-1009J adsp1009td ADSP-1009 adsp-1009kd ADSP-1009JD ADSP-1009JX ADSP-1009KX ADSP-1009SX
Contextual Info: ANALOG DEVICES 12x12-Bit CMOS Multiplier/Accumulator ADSP-1009 FEATURES 12 x 12-Bit Parallel M ultiplication/A ccum ulation 150m W P ow er Dissipation w ith C M O S Technology 130ns M ultiply/A ccum ulate Tim e Im proved TDC1009J Second Source A vailable in 64-Pin Ceram ic DIPs, or 68-Term inal

Contextual Info: PD - 94631A SMPS MOSFET IRFB16N60L HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 385mΩ 600V 130ns 16A • Motor Control applications

Contextual Info: ANALOG DEVICES 12*12-Bit CMOS Multiplier/Accumulator ADSP-1009 FEATURES 12 x 12-Bit Parallel Multiplication/Accumulation 150mW Power Dissipation with CMOS Technology 130ns Multiply/Accumulate Time Improved TDC1009J Second Source Available in 64-Pin Ceramic DIPs, or 68-Terminal

72-XM

Abstract: 7270m
Contextual Info: WHITE /MICROELECTRONICS W PD 8M 72-XM D C 8Mx72 DRAM DIM M FEATURES GENERAL DESCRIPTION Perform ance range: ^RAC ^C A C ^RC ^H P C W PD8M 72-60M DC 60ns 20ns 110ns 30ns W PD8M 72-70M DC 70ns 25ns 130ns 33ns The W P D8M 72-XM D C is a 8M x 72 bit Dynamic RAM high

360N10T

Abstract: PLUS-247 IXFK360N10T IXFX360N10T PLUS247
Contextual Info: Advance Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions

8n90c

Abstract: 8n90 IXYP8N90C3 IGBTS
Contextual Info: Advance Technical Information IXYY8N90C3 IXYP8N90C3 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 8A 2.5V 130ns TO-252 (IXYY) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

f 49055

Abstract: HA1-4900 HA1-4900-2 zero crossing detector
Contextual Info: 4302271 OOML^OO on harris bfl2 • HAS HA-4900, HA-4902 S E M IC O N D U C T O R HARRIS f~ SEMICONJ SECTOR b lE j^ ^ ~ 4 Q 5 D Precision Quad Comparator March 1993 Features Description • Fast Response T im e .130ns

STI324000-60

Abstract: STI324000-70 STI324000-80
Contextual Info: STI324000 4M X 32 DRAM SIMM Memory Module FEATURES • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC STI324000-60 60ns 15ns 110ns STI324000-70 70ns 20ns 130ns STI324000-80 80ns 20ns 150ns SiliconTech’s STI324000 is a 4M bits x 32 Dynamic RAM high

SL32

Abstract: SL32S4A1M1A-A60 SL32T4A1M1A-A60 4A1M1A-A70
Contextual Info: SL32 S/T 4A1M1A-A60 1M X 32 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tCAC tRC SL32(S/T)4A1M1A-A60 60ns 15ns 110ns SL32(S/T)4A1M1A-A70 70ns 20ns 130ns SL32(S/T)4A1M1A-A80 80ns 20ns 150ns tRAC • • • • • • • •

Contextual Info: b4E D S A M S UN G E L E C T R O N I C S INC • 7^4142 ü o m aia 3QQ ■ S f 1 6 K DRAM MODULES KMM5404000/G 4MK40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAC ÍRC 60ns 15ns 110ns KMM5404000-7 70ns 20ns 130ns KMM5404000-8

Contextual Info: SAMSUNG ELECTRONICS INC b7E D KM48V512A/AL/ALL • TTbMlME DCISTMB 071 «SIICK CMOS DRAM 512K x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM48V512A/AL/ALL-7 70ns 20ns 130ns KM48V512A/AL/ALL-8

44v100

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 DD1SÛ22 4bt I KM44V1000BLL CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tlUC te « ÍRC 70ns 20ns 130ns KM44V1000BLL-8 80ns 20ns 150ns KM44V1000BLL-10

Contextual Info: CMOS DRAM KM49C512B/B L/BLL 512K x 9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tCAC tR C KM49C512B/BL7BLL-6 60ns 15ns 110ns KM49C512B/BL/BLL-7 70ns 20ns 130ns KM49C512B/BUBLL-8 80ns 20ns 150ns • •

Contextual Info: SAMSUNG ELECTRONICS INC b7E D 7 ^4 1 4 2 0 G1 S Ö 73 ‘t ë ô CMOS DRAM KM416C256A/AL/ALL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAc tRC 60ns 15ns 110ns KM416C256A/AÜALL-7 70ns 20ns 130ns

Contextual Info: KM416C1204A/A-L/A-F CMOS DRAM 1M x 16 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: KM416C1204A-6/A-L6/A-F6 tRAC tCAC tRC tHPC 60ns 17ns 110ns 24ns KM416C1204A-7/A-L7/A-F7 70ns 20ns 130ns 29ns KM416C1204A-8/A-L8/A-F8

KM44V1000C

Contextual Info: KM44V1OOOC/CL/CLL CMOS DRAM 1M x4 B it CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM44V1000C/CL/CLL-6 60ns 15ns 110ns KM44V1000C/CL/CLL-7 70ns 20ns 130ns KM44V1000C/CL/CLL-8 80ns 20ns 150ns > Fast Page Mode operation

Contextual Info: CMOS DRAM KM41C4000C/CL/CSL 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM41C4000C/CL/CSL-5 50ns 13ns 90ns KM41C4000C/CL/CSL-6 60ns 15ns 110ns KM41C4000C/CL/CSL-7 70ns 20ns 130ns KM41C4000C/CL7CSL-8