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    IXFK360N10T Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFK360N10T
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 360A TO-264 Original PDF 6
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    IXYS Corporation IXFK360N10T

    MOSFETs TRENCH HIPERFET PWR MOSFET 100V 360A
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    Littelfuse Inc IXFK360N10T

    Discmsft Nchtrenchgate-Gen1 To-264(3)/ T; |Littelfuse IXFK360N10T
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    IXFK360N10T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    360N10T

    Abstract: PLUS-247 IXFK360N10T IXFX360N10T PLUS247
    Contextual Info: Advance Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		ixfk360n10tixfx360n10t130nso-264+3360n10tplus-247plus247 PDF

    Contextual Info: Preliminary Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 IXFK360N10T IXFX360N10T 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		ixfk360n10tixfx360n10t130nso-264+1360n10t PDF

    Contextual Info: Preliminary Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		ixfk360n10tixfx360n10to-264130ns+1360n10t PDF