44V100 Search Results

uras 14 pinout

Contextual Info: K M 4 4 V 1 0 0 0 /L J Q SAM SUNG im x 4 Bit C M O S Dynamic RAM with Fast Page Mode Semiconductor Advance Information SAMSUNG EL ECTRONI CS INC FEATUHtö •I SSE 7^4142 0 0 11 3 4 5 ATT « S I I G K GENERAL DESCRIPTION 2 V I *7 The Samsung KM 44V1000/L is a high speed

Contextual Info: DRAM MODULE KM M 372V 125AJ 1M x72 D R A M KMM372V125AJ Fast Page M ode D IM M w ith Q C A S , 1 K R e fr e s h , GENERAL DESCRIPTION 3 .3 V FEATURES • Performance Range: The Sam sung K M M 372V 125A is a 1M bit x 72 D ynam ic RAM high density m em ory module. The

KM44V1000C

Contextual Info: KM44V1OOOC/CL/CLL CMOS DRAM 1M x4 B it CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C 44V1000C/CL/CLL-6 60ns 15ns 110ns 44V1000C/CL/CLL-7 70ns 20ns 130ns 44V1000C/CL/CLL-8 80ns 20ns 150ns > Fast Page Mode operation

Contextual Info: CMOS DRAM 44V1004C/CL/CLL 1 M x 4 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tac tHPC 44V1004C/CL/CLL-6 60ns 15ns 110ns 24ns 44V1004C/CL/CLL-7 70ns 20ns 130ns 29ns 44V1004C/CL/CLL-8 80ns

Contextual Info: 44V1004DT CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: 44V1000BLL CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: Ï rac tcAc tfiC 70ns 20ns 130ns 44V1000BLL-8 80ns 20ns 150ns 44V1000BLL-10 100ns 25ns 180ns 44V1000BLL-7 • • • • •

Contextual Info: DRAM MODULE KMM372V122CJ/CT KMM372V122CJ/CT Fast Page Mode 1 Mx72 DRAM DIMM with QCAS, 1K Refresh, 3.3V GEN ER AL DESCRIPTION FEATURES • Performance Range: The Samsung KMM372V122C is a 1M bit x 72 D ynam ic RAM high density m em ory module. The tRAC 60ns

IC07

Abstract: KM44C1000D KM44V1000D
Contextual Info: 44V1000DJ ELECTRONICS CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Rags Mode CMOS DRAMs. Fast Pag Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: 44V1004DJ ELECTRO NICS CMOS D R A M 1 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: DRAM MODULE KM M372V225A J KMM372V225AJ Fast Page Mode 2Mx72 DRAM DIMM with QCAS, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372V225A is a 2M bit x 72 D ynam ic RAM high density m em ory module. The KMM372V225A - 6

Contextual Info: DRAM MODULE KMM364V120CJ/CT KMM364V120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Sam sung KM M 364V120C is a 1M bit x 64 D ynam ic RAM high density m em ory module. The Samsung KM M 364V120C consists of sixteen CMOS

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

Contextual Info: KMM372V122CJ/CT DRAM MODULE KM M372V122CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with QCAS, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Samsung KMM372V122C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V122C consists of sixteen CMOS

Contextual Info: KMM372V120CJ/CT DRAM MODULE KMM372V120CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V120C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V120C consists of eighteen

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 T bm M5 44V1000B/BL GGlSfiG3 SDU CMOS ORAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung 44V1000B/BL is a high speed CMOS 1,048,576 b it x 4 D ynam ic Random A ccess M em ory. Its

Contextual Info: KMM332V120CT DRAM MODULE KMM332V120CT Fast Page Mode 1Mx32 DRAM DIMM based on 1Mx4 Low Power, 1K Refresh , 3.3V G EN ERA L D ESC RIPTIO N The Samsung KMM332V120CT is a 1M bit x 32 Dynamic RAM low power memory module. The Samsung KMM332V120CT consists ot eight CMOS

Contextual Info: DRAM MODULE KMM374F124AJ KMM374F124AJ EDO Mode without buffer 1Mx72 DRAM DIMM with ECC based on 1Mx16 & 1Mx4, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Sam sung KM M 374F124AJ is a 1M bit x 72 • Part Identification D ynam ic RAM high density m em ory module. The

KM44V1004CJ

Abstract: 44V1004 ASX12
Contextual Info: CMOS DRAM 44V1004C/C L/CLL 1M x 4 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: The Samsung 44V1004C/CL/CLL is a CMOS high sp e e d 1 ,0 4 8 ,5 7 6 x 4 D y n a m ic R a n d o m A c c e s s Memory. Its design is optimized for high performance

Contextual Info: DRAM MODULE KMM364V120CJ/CT KMM364V120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Performance Range: The S am sung KM M 364V120C is a 1M bit x 64 D ynam ic RAM high density m em ory module. The KMM364V120C - 6 K M M 364V120C - 7

Contextual Info: DRAM MODULE KMM372V120CJ1/CT1 KMM372V120CJ1/CT1 Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372V120C is a 1M bit x 72 D ynam ic RAM high density m em ory module. The KMM372V120C - 6

Contextual Info: K M 4 4 V 1OOODT ELECTRONICS CMOS DRAM 1M x 4 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

k2624

Contextual Info: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D#

KM44V1000BT

Abstract: AE12A
Contextual Info: 44V1000B/BL CMOS DRAM 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung 44V1000B/BL is a high speed CMOS 1,048,576 b it x 4 D ynam ic Random A ccess M emory. Its design is op tim ized fo r high perform ance a p plication s