KM48C5 Search Results

EE-19 N

Abstract: EE-218
Contextual Info: KM48C512B, KM48V512B CMOS DRAM 512K x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KM48C512LL CMOS DRAM 512Kx8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C512LL is a CMOS high speed 524,288 b itx 8 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM48C514D, KM48V514D CMOS DRAM 512Kx 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time(-5,-6,-7), power consumption(Normal or Low

Contextual Info: KM48C514B, KM48V514B CMOS DRAM 5 1 2 K x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KM48C514DJ CMOS DRAM 5 1 2 K x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family o1 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

MS3467

Abstract: a9ce 31DQ3
Contextual Info: KM48C514B, KM48V514B CMOS DRAM 5 1 2 K x 8 B i t CM O S Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: High Speed KM48C512D CMOS DRAM High Speed 512K x 8Bit CMOS Dynamic RAM with with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -4 , power consumption(Normal or Low power) and package type(SOJ or TSOP-II)

Contextual Info: KM48C512B, KM48V512B CMOS DRAM 5 1 2 K x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KM48C512DT CMOS DRAM 5 1 2 K x 8 B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KM48C512LL CMOS DRAM 512K x8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C512LL is a CMOS high speed 524,288 bit x 8 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: PRELIMINARY KM48C512 CMOS DRAM 5 1 2 K X 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 48C512 is a CMOS 5 2 4 ,2 8 8 bit X 8 Dynamic Random Access design is optimized for high performance such as personal computer, graphics and

Contextual Info: KM48C512DT CMOS DRAM ELECTRONICS 5 1 2 K x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: CMOS DRAM KM48C512/L/SL 512K x8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C512/L/SL is a CMOS high speed 524,288 bit x 8 Dynamic Random Access Memory. Its design is optimized for high performance applications

KM48C512B

Abstract: KM48C512BJ
Contextual Info: KM48C512B/BL/BLL CMOS DRAM 512K x 8 Bit CM OS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION T h e S a m s u n g K M 4 8 C 5 1 2 B /B L /B L L is a C M O S h ig h • Performance range: tR C s p e e d 5 2 4 ,2 8 8 b i t x 8 D y n a m ic R a n d o m A c c e s s

Contextual Info: KM48C512D, KM48V512D CMOS DRAM 5 1 2 K x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fa m ily of 524,288 x 8 bit Fast Page M ode CM O S DRAMs. Fast Page M ode offers high speed random access of m em ory ce lls w ithin the sam e row. Pow er supply voltage + 5.0V or +3.3V , access tim e

Contextual Info: KM48C512D, KM48V512D CMOS DRAM 512K x 8Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply vottage +5.0V or +3.3V , Access time(-5,-6,-7), power consumption(Normat or Low power) and

Contextual Info: High Speed KM48C512D CMOS DRAM High Speed 512K x 8Bit CMOS Dynamic RAM with with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Access time -4 , power consumption(Normal or Low power) and package type(SOJ or TSOP-II)

C514B

Contextual Info: KM48C514B, KM48V514B CMOS DRAM 512K x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily of 524,288 x 8 bit Extended Data O u! C M O S DRA M s. Extended D ata O ut offe rs high speed random acce ss of m em ory cells w ithin th e sam e row. P ow er supply vo lta g e +5.0V o r +3.3V , a ccess tim e

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • TTbHlHS ü ü lS flm 31Ö CMOS DRAM KM48C512A/AL/ALL 512Kx8 Bit C M O S Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sun g KM48C512A/AL/ALL is a C M O S high speed 524,288 bit x 8 Dynamic Random A cce ss Memory.

Contextual Info: KM48C512D, KM48V512D CMOS DRAM 512K x 8Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , Access time(-5,-6,-7), power consumption(Normal or Low power) and

Contextual Info: KM48C512B/BL/BLL CMOS DRAM 512 K x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC KM 48C 512B /B 1VB LL-5 50ns 15ns 90ns K M 4 8 C 5 1 2 B /B L /B L L -6 60ns 15ns 110ns KM 48C 512B /B L7B LL-7

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • KM48C512/L/SL 7^4142 0D133bS 4b2 « S M Ö K CMOS DRAM 5 1 2 K x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C512/L/SL is a CMOS high speed 524,288 b it x 8 Dynamic Random Access Memory. Its

Contextual Info: KM48C514P, KM48V514D CMOS DRAM 5 1 2 K x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KM48C512LL CMOS DRAM 5 1 2 K x8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C512LL is a CMOS high speed 524,288 bit x 8 Dynamic Random Access Memory. Its design is optimized for high performance applications