KMM594 Search Results

Contextual Info: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

Contextual Info: DRAM MODULE 4 Mega Byte KMM5941OOAKN Fast Page Mode Preliminary 4M x9 DRAM SIM M , 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION T h e S a m s u n g K M M 5 94 1 OOAKN is a 4 M bit x 9 FEATURES • P e rfo rm an ce R ange: D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . T h e

Samsung Capacitor sms

Abstract: km41c4000aj KM41C4000A
Contextual Info: D3AM MODULES KMM59400QA 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

Contextual Info: KMM594000 DRAM MODULES 4M x 9 CMOS DRAM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000 Is a 4M b i t x 9 Dynamic RAM high density memory module. The Samsung KMM594000 consist of nine KM41C4000J DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

41C4000CJ

Contextual Info: DRAM MODULE KMM594100AKN Fast Page Mode 4 Mega Byte Preliminary \ 4Mx9 DRAM SIMM , 2K Refresh , 5 V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM594100AKN is a 4M bit x 9 Dynamic RAM high density memory module. The Samsung KMM594100AKN consists of two CMOS

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 DD147b3 100 KMM594100N DRAM MODULES 1 M x 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM594100N is a 4M b itx 9 Dynamic RAM high density memory module. The Samsung

TCA 720

Abstract: m59400 KM41C4000BJ
Contextual Info: KMM594000B DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAc *RC KMM594000B-6 60ns 15ns 110ns KMM594000B-7 70ns 20ns 130ns KMM594000B-8 80ns 20ns 150ns Fast Page Mode operation CAS-before-RAS refresh capability

CQ 765

Contextual Info: KMM594020A DRAM MODULES 4 M x 9 CMOS DRAM SIMM Memory Module, Low Power GENERAL DESCRIPTION FEATURES • Performance range: tRAC tcAC tñC KMM594020A-7 70ns 20ns 130ns KMM594020A-8 80ns 20ns 150ns KMM594020A-10 100ns 25ns 180ns Fast Page Mode operation CAS-before-RAS refresh capability

KM41C4000A

Contextual Info: SAM S UN G E L E C T R O N I C S INC b4E D OOmSET 7^4142 1 ÖD « S h l G K DRAM MODULES KMM594020A 4M X 9 CMOS DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020A is a 4M b itx 9 Dynamic RAM high density memory module. The Samsung

Contextual Info: DRAM MODULES KMM594000A 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Perform ance range: tR A C tC A C tR C 70ns 20ns 130ns KM M 594000A- 8 80ns 20ns 150ns K M M 594000A -10 100ns 25ns 180ns KM M 594000A- 7 • • • • • • •

Contextual Info: b7E T> m TTbMlME G01S111 S04 SAMSUNG ELECTRONICS INC DRAM MODULES KMM594020B 4M x9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020B is a4 M b its x 9 Dynamic RAM high density memory module. The Samsung KMM594020B

WO4M

Abstract: KMM594
Contextual Info: KMM594100N DRAM MODULES 1 M x 9 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KMM594100N is a 4M b i t x 9 D ynam ic RAM high d e n sity m em ory m odule. The Sam sung K M M 5 9 4 1 0 0 N c o n s is t o f tw o 4M b it D R A M s

km41c4000cj

Abstract: ka5 capacitor
Contextual Info: DRAM MODULE 4 Mega Byte KMM594000C1 Fast Page Mode 4Mx9 DRAM SIMM , 1K Refresh , 5V G E N E R A L DESCRIPTIO N FEATURES The Samsung KMM594000C1 is a 4M bit x 9 Dynamic RAM high density memory module. The • Performance Range: Samsung KMM594000C1 consists of nine CMOS

594000A

Contextual Info: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 594000A consist of nine KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

KM41C4000BJ

Abstract: KMM594000B-6 KMM594000B KMM594000B-7 KMM594000B-8 30-pin simm memory 30-pin simm memory dynamic 4Mx9 DRAM 30-pin SIMM
Contextual Info: S A N S U N G E L E C T R O N I C S INC b 7 E T> • 7 T b m M 5 GDlSlDb KMM594000B T H 7 ■ SriGK DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAc I rc 60ns 15ns 110ns KMM594000B-7 70ns 20ns 130ns

irp 945

Abstract: KM41C4000AJ 4Mx9 DRAM 30-pin SIMM connector SAMSUNG 30 PIN irp 540 30pin samsung KMM594000A KMM594000A-10 KMM594000A-7 KMM594000A-8
Contextual Info: SA M S UN G E L E C T R O N I C S INC b4E D • 7 = ^ 4 1 4 2 0 0 1 4 5 1 1 S31 I SMGK KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tCAC tRC 70ns 20ns 130ns KMM594000A- 8 80ns 20ns 150ns

KM44C4100AJ

Abstract: KM41C4000CJ
Contextual Info: DRAM MODULE 4 Mega Byte KMM5941OOAN Fast Page Mode 4M x9 DRA M S IM M , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G E N E R A L DES C R IPTIO N The S am sung KM M 594100A N is a 4M bit x 9 FEATURES • Performance Range: D ynam ic RAM high de nsity m em ory module. The

KMM5324100AV

Contextual Info: TABLE OF CONTENTS DRAM Module Product Guide DRAM SIMM Based on 16M DRAM 5V 4 M x 8 . KMM584100AN-5/6/7/8. 4 M x 8 . KM M584100AKN-5/6/7/8. 4 M x 9 . KMM5941OOAN-5/6/7/8.

30 pin simm

Abstract: 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM
Contextual Info: MEMORY ICs FUNCTION GUIDE 2.2 Dynamic RAM Module Based Component Part Number Organization Speed ns Features Packages PCB height(ln) Remark 1M DRAM KMM58256CN 256Kx8 60/70/80 F ast Page S, 30 Pin SIMM 650 Now Base KMM59256CN 256K X 9 70/80 F ast Page S, 30 Pin SIMM

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

1Mx9 DRAM 30-pin SIMM

Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Contextual Info: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C

KM44C1000

Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. II. Introduction . 11 Product G uide. 14

ttl 74112

Abstract: KMM594000 KMM594000-10 KMM594000-8 KM41C4000J 74112
Contextual Info: SAMSUNG ELECTRONICS INC 4 2E » 7^4142 KM M594000 001D4Û2 b • DRAM MODULES 4 M x 9 CMOS DRAM Memory Module FEATURES GENERAL DESCRIPTION • P erform ance range: T h e S am su ng K M M 59 4 0 00 is a 4 M b l t x 9 D yn am ic R A M high de n s ity m em ory m odu le. T h e S a m s u n g