KM44C1000 Search Results

Contextual Info: KM44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 4 C 1 0 0 0 A S L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TTbMlMB 001325^ aflfl ■ S M G K KM44C1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C1OOOAL is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory.

Contextual Info: CMOS DRAM KM44C1000AL 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e range: tR A C tcAC KM44C1OOOAL- 7 70ns 2 0 ns KM 44C 1 OOOAL- 8 80ns I 2 0 ns 1 50 ns 25ns i 180ns K M 4 4 C 1 0 0 0 A L -1 0 10 0ns tRC

KM44C1000

Abstract: km44c1000bj KM44C1000BJ6 KM44C1000BP-7
Contextual Info: SAMSUNG ELECTRONICS INC L7E i 7^4142 DDISbHT B47 « S P I Ù K CMOS DRAM KM44C1000B 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000B is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its de­

Contextual Info: KM44C1000D, KM44V1000D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 41 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power), a d

Contextual Info: KM44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e ran ge: tR A C tC A C tR C K M 44C1 000A S L- 7 7 0 ns 2 0 ns 1 3 0 ns K M 44C1 000A S L- 8 80ns 2 0 ns 1 5 0 ns K M 4 4 C 10OOASL-1 0

KMM581000N8

Contextual Info: KMM581000N DRAM MODULES 1 M x 8 D R A M S IM M M em ory M odule FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000N is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000N c o n s is t o f tw o 4M b it DRAMs KM44C1000J-1M x 4 in 20-pin SOJ package mounted

44c1000

Contextual Info: KM44C1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tRAC • • • • • • • tcAC tRC 130ns KM 44C1000AL- 7 70 n s 2 0 ns KM44C1OOOAL- 8 80ns 2 0 ns 1 50 ns K M 4 4 C 1 0 0 0 A L -1 0

KM44C1000BLJ-7

Abstract: km44c1000blj6 KM44C1000BLT7 KM44C1000BLT-7 KM44C1000BLT6 1000BL KM44C1000BLT
Contextual Info: KM44C1000BL CMOS DRAM 1M x 4 Bit C M O S Dynamic RAM with Fast Page M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000BL is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: CMOS DRAM KM44C1000A 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • T h e S a m s u n g K M 4 4 C 1 0 0 0 A is a high s p e e d C M O S 1 ,0 4 8 , 5 7 6 b it X 4 D y n a m ic R andom A c c e s s M e m o ry . P e rfo rm a n c e range:

Contextual Info: KM44C1000ASL CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 4 C 1 0 0 0 ASL is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications

Contextual Info: KM44C1000ASL CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C KM 44C1000ASL- 7 70 ns 20 ns 130ns KM 44C 1 00 0A S L - 8 80ns 20 ns 150ns K M 4 4 C 10OOASL-10 100ns 25 n s 18 0 n s

KM44C1000C

Contextual Info: KM44C1OOOC/CL/CSL CMOS DRAM 1M x4B it CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000C/CUCSL is a high speed C M O S 1,0 4 8 ,5 7 6 x 4 D yn a m ic R and om A cce ss Memory. Its design is optimized for high performance

Contextual Info: KM44C1000C, KM44V1000C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

KM44C1000C

Abstract: KM44C1000CZ
Contextual Info: CMOS DRAM KM44C1OOOC/CL/CSL 1M x 4 B it CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tnc KM44C1000C/CL7CSL-5 50ns 13ns 90ns KM44C1000C/CL/CSL-6 60ns 15ns 110ns KM44C1000C/CL/CSL-7 70ns 20ns 130ns KM44C1000C/CUCSL-8

Contextual Info: KM44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC 70ns 2 0 ns 130ns K M 44C 1 OOOASL- 8 80ns 2 0 ns 150ns K M 4 4 C 10OO ASL-10 1 0 0 ns 25ns 180ns K M 44C 1 OOOASL- 7

44c1000

Abstract: KM44C1000
Contextual Info: KM44C1000/L CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 4 C 1 0 0 0 L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 dynamic Random A ccess Memory. Its design is optimized for high perform ance applications

44C1000AP

Contextual Info: CMOS DRAM KM44C1000A 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 b it X 4 Dynam ic Random A cce ss M em ory. Its design is optimized for high perform ance applications

V1000D

Abstract: CA5B KM44V1000D C1000D
Contextual Info: KM44C1000DT ELECTRONICS CMOS DRAM 1M X 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

44C1000

Contextual Info: SAMSUNG ELECTRONICS INC 42E KM44C1000/L T> a 7^4142 001G2G4 - ^ 0 fflSflüK CMOS DRAM 1MX4 Bit CMOS Dynamic RAM with Fast Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 44C 1000/L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 dynamic Random Access Memory.

Contextual Info: S A MS UN G E L E C T R O N I C S INC b4E » • 7^^142 D G 1 3 2 7 b 3b7 « S M S K KM44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 ASL is a high speed CMOS

Contextual Info: CMOS DRAM KM44C1000A 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 1 0 0 0 A is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications

km44c1000alt

Abstract: KM44C1000AL-10 samsung hv capacitor
Contextual Info: KM44C1000AL CM OS DRAM 1 M X 4 B it C M OS Dynam ic R A M with F ast Page M ode FEATURES • GENERAL DESCRIPTION P e rfo rm a n c e range: tRAC ¡ tcAC K M 44C 1 000A L- 7 70ns 2 0 ns 13 0n s KM 44C 1 000A L- 8 80ns 2 0 ns 150ns K M 4 4 C 1 0 0 0 A L -1 0

km44c1000aj

Abstract: 581000A
Contextual Info: KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581OOOAN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM44C1000AJ - 1MX4 in 20-pin SOJ package