KM41C4000J Search Results

KMM584000

Abstract: KM41C4000J
Contextual Info: KM M584000 DRAM MODULES 4 M x 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000 is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung KMM584000 consist of eight KM41C4000J DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

Contextual Info: KMM594000 DRAM MODULES 4M x 9 CMOS DRAM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000 Is a 4M b i t x 9 Dynamic RAM high density memory module. The Samsung KMM594000 consist of nine KM41C4000J DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

KM41C4000AJ

Abstract: KM44C1000AZ "30 pin simm" KM41C4000Z KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble
Contextual Info: FUNCTION GUIDE 2. Product Guide 2.1 Dynamic RAM Generation 1st Gen. 2nd Gen. 3rd Gen. Part Number Organization Speed ns Technology Feature Package Remark KM41C4000J KM41C4000Z KM 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 4M x1 4M x1

km41c4000

Contextual Info: KM41C4000/L CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1C 4 0 0 0 /L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: SA MS UN G E L E C T R O N I C S INC 42E D B 7^4142 KMM584000 00104bb Ô DRAM MODULES 4 Mx 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KMM584000 Is a 4M b l t x 8 D ynam ic RAM high d e n sity m em ory m odule. The S am sung

KM41C4000/L

Abstract: KM41C4000
Contextual Info: SAMSUNG ELECTRONICS INC M 2E D 7^4142 QQ1D1S7 b ISM6K CMOS DRAM KM41C4000/L 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tflC K M 41C 4000/L- 8 80ns 20ns 150ns K M 41C 4000/L-10 100ns 25ns

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

Contextual Info: CMOS DRAM KM41C4000/L 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 /L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 dynamic Random A ccess Memory. Its design is optimized for high perform ance applications

20PIN

Abstract: Z4.7 KM41C4000j-8 Hitachi Scans-001 KM41C4000J-10
Contextual Info: - 227 4M CMOS m % tt ft CC TRAC max ns) TRCY •in (ns) D y n a m i c •/ f- > / TCAE1 T A H min min (ns) (ns) TP min (ns) X A RAM (41 9 4 3 0 4 x 1 ) ft it m TWCY min (ns) TDH (ns) TRWC min (ns) V D D or V C C (V) I DD max (ibA) 2 0 P I N A m 5 1 4 1 0 0

KM41C4000

Abstract: 41C4000 A8AJ
Contextual Info: M41C4000/L CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4000/L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 dynamic Random Access Memory. Its design is optimized for high performance applications

KM41C1000BJ

Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page