KM41C256 Search Results

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

KM41C256-8

Abstract: KM41C256-7 KM41C256
Contextual Info: CMOS DRAM KM41C256 DC AND OPERATING CHARACTERISTICS Continued Symbol Min Max Units Input Leakage Current (Any input 0 V ^ V |N^6.5V, all other pins not under test = 0 volts.) IIL -1 0 10 MA Output Leakage Current (Data out is disabled, 0 ì VOut<5.5V) loL

KM424C256Z

Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J

41C256

Abstract: KM41C256P 41C256-10 KM41C256-7 KM41C256Z KM41C256 KM41C256-8
Contextual Info: CMOS DRAM KM41C256 256K x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C256 is a CMOS high speed 262,144 bit x 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

KM41C464Z

Abstract: KM41C256P KM41C464P KM41C464J KM41C256J KM41C256Z KM41C257J 1MX1 KM41C464
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 D y n a m ic R A M Capacity 2 5 6 K bit 1M bit Part Number Organization Speed ns Technology Features Packages Remark KM41C256P 256K X 1 70/80/100 CMOS Fast Page 16 Pin DIP Now KM41C256J 256K X 1 70/80/100 CMOS

41C256

Abstract: KM41C256P KM41C256-8 KM41C256 KM41C256-7 KM41C256Z KM41C256J KM41C256-10 41C256-
Contextual Info: CMOS DRAM KM41C256 256Kx 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C256 is a CMOS high speed 262,144 bit x 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

KM41C1000BJ

Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258

KM41C256-8

Abstract: HM51256P-10 km41c256 HM51256P-12 HM51256LP-10 HM51256P-15 KM41C256-10 HM51256LCP-10 MB81C258-10 HM51256CP-15
Contextual Info: - 2 5 6 K X i m & tt £ OC TRAC max ns) CMOS • ; + TRCY min (ns) TCAD (ns) TAH min (ns) > ? TF mir (ns) D y n a m i c RAM íf li TWCY min (ns) TDH (ns) TRWC min (ns) V D D or V C C (V) 16 P I N ( 2 6 2 1 4 4 X 1 M A M 1 DD max (mA) ti [+typ] 5 12 5 8 ÍÜ

Contextual Info: MEMORY MODULES KMM59256AN Units: Inches millimeters 0.550 ( 16.5 1 ) PACKAGE DIMENSIONS o 2G0 (5.08) TOLERANCES: ±0.0 0 5 (0.13) UNLESS OTHERWISE SPECIFIED 0.054 (1.37) 0.047 (1.19) eg SAM SUNG Electronics 312 MEMORY MODULES KMM59256AN 256K X 9 DRAM SIMM Memory Module

KMM59256BN

Abstract: KM44C256BJ
Contextual Info: S A M S U N G ELECTR O N ICS IN C 42E D D 7c lbm42 D O IO M ID 3 SSM G K KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59256BN is a 262,144 bit X 9 Dynamic RAM high density memdry module. The Sam­

41C464

Abstract: 41C258 41C1000 44C256C
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. Product G u id e.