Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LBM42 Search Results

    SF Impression Pixel

    LBM42 Price and Stock

    Select Manufacturer

    Standard Insert PFLB-M4-2

    Mounting Hardware POST MOLD FLANGE INSERT BRASS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PFLB-M4-2 339
    • 1 $0.52
    • 10 $0.36
    • 100 $0.29
    • 1000 $0.23
    • 10000 $0.22
    Buy Now
    DB Roberts PFLB-M4-2 5,752
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.19
    • 10000 $0.19
    Buy Now

    Eaton Corporation 10250T20LBM42

    Control Switches OILTIGHT SELECTOR SWITCH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 10250T20LBM42
    • 1 $179.49
    • 10 $169.44
    • 100 $166.93
    • 1000 $166.93
    • 10000 $166.93
    Get Quote

    Lextar Electronics Corporation LBM4201 V0

    2L/min DYNAMIC STERILIZATION
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rutronik LBM4201 V0 Box 2 1
    • 1 $120.32
    • 10 $105.51
    • 100 $105.51
    • 1000 $105.51
    • 10000 $105.51
    Buy Now

    Amphenol Corporation SLBM426P

    (Alt: SLBM426P)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Abacus SLBM426P 143 Weeks 10
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    LBM42 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    KMM59256BN

    Abstract: KM44C256BJ
    Contextual Info: S A M S U N G ELECTR O N ICS IN C 42E D D 7c lbm42 D O IO M ID 3 SSM G K KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59256BN is a 262,144 bit X 9 Dynamic RAM high density memdry module. The Sam­


    OCR Scan
    KMM59256BN KMM59256BN KM44C256BJ 256KX4) 20-pin KM41C256J-256KX1) 18-pin 30-pin KMM59256BN- PDF

    MOSFET 900V 3A

    Contextual Info: SSW/I3N90A A dvanced Power MOSFET FEATURES ~ 900 V ^DS on = 6.2 Q ^DSS • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 900V ■ Low RDS(0N) : 4.679 Q. (Typ.) < CO Rugged Gate Oxide Technology


    OCR Scan
    SSW/I3N90A 0040b77 MOSFET 900V 3A PDF