KM64258 Search Results

Contextual Info: CM OS SRAM KM64258C 65,536 WORDx4 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12, 15, 20ns Max. » Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA(max.) Operating : KM 64258C-12 : 150mA (max.) KM 64258C-15 : 140mA (max.)

Contextual Info: KM64258C CMOS SRAM 64Kx4 Bit With OE High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12, 15, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 40 mA (Max.) (CMOS) : 2 mA (Max.) Operating KM64258C-12 : 150 mA (Max.) KM64258C-15 :140 mA (Max.)

Contextual Info: PRELIMINARY KM64258E CMOS SRAM Document Tills 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial draft Draft Data Aug. 1 .1 9 9 8 Remark Preliminary The attached data sheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right

Contextual Info: KM64258C CMOS SRAM 65,536 WORDx4 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA(max.) Operating : KM64258C-12 : 150mA (max.) KM64258C-15: 140mA (max.)

Contextual Info: KM64258B CMOS SRAM 6 4 KX 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • • T h e K M 6 4 2 5 8 B is a 2 6 2 , 1 4 4 - b it h ig h -s p e e d S ta tic R an­ F a s t A c c e s s T im e : 15, 2 0 , 2 5 n s (m ax .) Lo w P o w er D is sip a tio n

KM64258BP-15

Abstract: KM64258BP/J-25 KM64258
Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 GD17Sbb AST ■ SP1GK KM64258B CMOS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40mA (max.)

Contextual Info: PRELIMINARY KM64258E CMOS SRAM Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial draft Draft Data Aug. 1. 1998 Remark Preliminary The attached data sheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right

Contextual Info: KM64258C CMOS SRAM 64K x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 1 2 .1 5 ,20ns M ax. • Low Power D issipation Standby (TT L) : 40m A(M ax.) (CM O S) : 2m A(M ax.) O perating KM64258G -1 2 : 1S0mA(M ax.) KM 64258C -1 5 : 140m A(M ax.)

KM64258CJ-20

Contextual Info: KM64258C CMOS SRAM 64Kx4 Bit With OE High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12, 15, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 40 mA (Max.) (CMOS) : 2 mA (Max.) Operating KM64258C-12 : 150 mA (Max.) KM64258C-15 : 140 mA (Max.)

Contextual Info: KM64258C CMOS SRAM 64Kx4 Bit With UE High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 40 mA (Max.) (CMOS) : 2 mA (Max.) Operating KM64258C-12 :150 mA (Max.) KM64258C-15 : 140 mA (Max.)

SOJ 44

Abstract: 1MX1 KM6865
Contextual Info: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001

Contextual Info: CMOS SRAM KM64258C Document Tills 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial re le a s e w ith P re lim in a ry. A pr. 1st, 1994

Contextual Info: CMOS SRAM KM64258C Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial release with Preliminary. Apr. 1st, 1994 Preliminary

KM64258BJ-20

Abstract: KM64258BJ-15
Contextual Info: CMOS SRAM KM64258B 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS): 2mA (max) Operating KM64257BP/J-15: 140m A (max.)

Contextual Info: KM64258C CMOS SRAM 64Kx4 Bit With UE High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12, 15, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 40 mA (Max.) (CMOS) : 2 mA (Max.) Operating KM64258C-12 : 150 mA (Max.) KM64258C-15 : 140 mA (Max.)

KM64258BJ-15

Abstract: KM64258BJ-20 KM64258BP-15
Contextual Info: KM64258B CMOS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS): 2m A (max) Operating KM64258B-15: 140mA (max.) KM64258B -20: 130mA (max.)

Contextual Info: CMOS SRAM KM64258C 65,536 WORDx4 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA(max.) Operating : KM64258C-12 : 150mA (max.) KM64258C-15 : 140mA (max.)

Contextual Info: PRELIMINARY CMOS SRAM KM64258B 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS): 2mA (max) Operating KM64257BP/J-15: 140mA (max.)

Contextual Info: CMOS SRAM KM64258B 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast A ccess Time: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS): 2m A (max) Operating KM64258B-15: 140mA (max.) KM64258B-20: 130mA (max.)

KM64258BP-15

Abstract: KM64258BJ-20 KM64258BJ-15 KM64258
Contextual Info: PRELIMINARY KM64258B CMOS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS): 2mA (max) Operating KM64257BP)J-15: 140mA (max.)

Contextual Info: KM64258E CMOS SRAM Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating). Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary. Aug. 1. 1998 Preliminary Rev. 1.0 Release to Final Data Sheet. Nov. 2. 1998

Contextual Info: PRELIMINARY CMOS SRAM KM64258E Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial draft Draft Data Aug. 1. 1998 Remark Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

Contextual Info: PRELIMINARY CMOS SRAM KM64258C Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Apr. 1st, 1994

HM6709AJP-20

Abstract: HM6709SHJP-10 KM64258B-25 KM64259B-15 KMB4259B-20 KMB4259B-25 Hitachi Scans-001
Contextual Info: 2 5 6 K B iC M O S X m £ a £ CC TAAC max ns) TCAC max (ns) 4 -y TOE max (ns) TOH min (ns) * y TOD max (ns) S t a t i c ? TWP min (ns) ft RAM (65, & TDS 536x4) m "ns) TDH min (ns) TWD min (ns) TWH max (ns) V D D or V C C (V) 2 8 P I N X m I DP max (mA)