KM6865 Search Results

KM6865BP-20

Abstract: KM6865BP-15
Contextual Info: KM6865B CMOS SRAM 8 K x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12 ,15, 20,25ns Max. The KM865B is a 65,536-bit high-speed Static Random • Low Power D issipation Access Memory organized as 8,192 words by 8 bits.

Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E » • 7^4142 ÜÜ175SÖ 753 ■ CMOS SRAM KM6865B/BL 8,192 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.)

KM6865

Abstract: 8KX8-Bit CMOS SRAM a11u
Contextual Info: ADVANCED INFORMATION CMOS SRAM KM6865 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fmt Access Tim* 35, 45, 55ns max. • Low Power DiMlpation Standby (TTL): 2mA <max.) (CMOS): 100/¿A (max.) Operating : 100mA (max.) • Single 5V ± 10% supply

KM6865BP-15

Abstract: km6865b 3I322
Contextual Info: CMOS SRAM KM6865B/BL 8,192 WORD x 8 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES T h e K M 6 8 6 5 B /B L is a 6 5,5 36 -b it h ig h -s p e e d S ta tic • Fast A cc e s s Tim e: 12, 15, 20, 25ns m ax. • Low Pow er D issipation Standby (TTL)

SOJ 44

Abstract: 1MX1 KM6865
Contextual Info: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001

CS1J

Contextual Info: SAMSUNG SEMICONDUCTOR INC D S3E • 7Tb4142 0000572 KM6865P/KM6865LP 7 CMOS SRAM 8K x 8 Bit Static RAM FEATURE GENERAL DESCRIPTION • Fast Access Time 35,45,55ns max. • Low Power Dissipation Standby (TTL) : 3 mA (max.) (CMOS): 100 pA (max.) Operating : 120 mA (max.)

Contextual Info: ADVANCED INFORMATION CMOS SRAM KM6865 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 35, 45, 55n* max. • Low Power DiMlpation Standby (TTL): 2mA (max.) (CMOS): 100pA (max.) Operating : 100mA (max.) • Single 5V ± 10% supply

KM6865B-20

Contextual Info: CMOS SRAM KM6865B 8,192 WORD x 8 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) • Operating KM6865B-12 :140mA (max.) KM6865B-15 :130mA (max.)

KM6865B

Abstract: KM6865B-12 KM6865B-15 KM6865B-20 KM6865B-25 km6865
Contextual Info: CMOS SRAM KM6865B 8,192 WORD x 8 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) • Operating KM 6865B-12 : 140mA (max.) KM 6865B-15 : 130mA (max.)

AAEA2

Abstract: KM6865B-12 km6865b
Contextual Info: CMOS SRAM KM6865B 8,192 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 12, 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 35mA (max.) (CMOS): 1mA (max.) • Operating KM6865B-12 :140m A (max.) KM6865B-15 : 130mA (max.)

KM6865BP20

Abstract: KM6865BP-20 KM68658P-15 km6865 KM6865BP15 km6865bj-20 KM6865BJ-15 KM6865BJ-25 KM6865BP-15
Contextual Info: CMOS SRAM KM6865B/BL 8,192 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A cc e s s Tim e: 12, 15, 20, 25n s m ax. • Low P o w er D issipation T h e K M 6 8 6 5 B /B L is a 6 5,5 3 6 -b it h ig h -s p e e d S ta tic R a n d o m A c c e s s M e m o ry o rg a n iz e d a s 8,192 w o r d s b y

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

IDT7164L25

Abstract: M4821 Mostek IDT7164L20 IDT7164L30 IDT7164L35 IDT7164S20 IDT7164S25 IDT7164S35 IDT7165L-30
Contextual Info: 96 6 4 K x m % tt £ rc TAAC max ns) TCAC max (ns) 4 CMOS + TOE max (ns) TOH min (ns) y TOD nax (ns) y S t a t i c W TWP min (ns) TDS •in (is) R A M (81 9 2 X 8 ) 2 8 P I N A 14 TDH min (ns) TWD ■in (ns) TWR nax (ns) V D D or V C C (V) I DD max (mA)

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

LH5164

Abstract: km6264 oki cross reference w24512 cross hm6264 KM62256 MSM5178 uPD43256 PD4364 MSM51257
Contextual Info: CROSS REFERENCE GUIDE SLOW SPEED CMOS SRAMs WINBOND HITACHI W241024 HM628128 W24512 - W24257 HM62256P/FP W2465 HM6264 SONY CXK581000P/M - CXK58257P/SP/M CXK5864BP FUJITSU MB841000 - MB84256 //PD43256 / PD4364 NEC - MB8464 TOSHIBA TC551001PL/FL - TC55257BP/BF

um61256ak-15

Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
Contextual Info: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7

KM68B65P-20

Contextual Info: 0% KM68B65 Q S SAM SUNG Semiconductor 8K x 8 BIT ULTRA-FAST BiCMOS STATIC RAM FEATURES DESCRIPTION • Ultra-Fast Access Times — Commercial: 12ns, 15ns, 20ns The KM68B65 is a 65,536-bit ultra high speed TTL-Level Static Random Access Memory organized as 8,192

AAA1M304

Abstract: tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A
Contextual Info: Cross Reference & Fast Static RAM Vendor Cypress Fujitsu Hitachi IDT ISSI Micron Mltsubish P/N Alliance P/N Description P/N Alliance P/N CY7C106 AS7C1028 256K x 4 MCM32A32 AS7M32D128 128K module CY7C185 AS7C164 8Kx8 MCM32A64 AS7M32D256 256K module CY7C188

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7