KM64258B Search Results

Contextual Info: KM64258B CMOS SRAM 6 4 KX 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • • T h e K M 6 4 2 5 8 B is a 2 6 2 , 1 4 4 - b it h ig h -s p e e d S ta tic R an­ F a s t A c c e s s T im e : 15, 2 0 , 2 5 n s (m ax .) Lo w P o w er D is sip a tio n

KM64258BP-15

Abstract: KM64258BP/J-25 KM64258
Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7 ^ 4 1 4 2 GD17Sbb AST ■ SP1GK KM64258B CMOS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40mA (max.)

SOJ 44

Abstract: 1MX1 KM6865
Contextual Info: FUNCTION GUIDE MEMORY ICs High speed & Ultra High Speed SRAM Den. Part Name 64K KM6465B/BL KM6466B/BL KM6865B/BL KM64258B KM64258C KM64V258C KM64B258A KM64B261A KM68257B/BL KM68257C/CL KM68V257C/CL KM68B257A KM68B261A KM69B257A KM616513 KM616V513 KM611001

KM64258BJ-20

Abstract: KM64258BJ-15
Contextual Info: CMOS SRAM KM64258B 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS): 2mA (max) Operating KM64257BP/J-15: 140m A (max.)

KM64258BJ-15

Abstract: KM64258BJ-20 KM64258BP-15
Contextual Info: KM64258B CMOS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS): 2m A (max) Operating KM64258B-15: 140mA (max.) KM64258B -20: 130mA (max.)

Contextual Info: PRELIMINARY CMOS SRAM KM64258B 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS): 2mA (max) Operating KM64257BP/J-15: 140mA (max.)

Contextual Info: CMOS SRAM KM64258B 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast A ccess Time: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS): 2m A (max) Operating KM64258B-15: 140mA (max.) KM64258B-20: 130mA (max.)

KM64258BP-15

Abstract: KM64258BJ-20 KM64258BJ-15 KM64258
Contextual Info: PRELIMINARY KM64258B CMOS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS): 2mA (max) Operating KM64257BP)J-15: 140mA (max.)

HM6709AJP-20

Abstract: HM6709SHJP-10 KM64258B-25 KM64259B-15 KMB4259B-20 KMB4259B-25 Hitachi Scans-001
Contextual Info: 2 5 6 K B iC M O S X m £ a £ CC TAAC max ns) TCAC max (ns) 4 -y TOE max (ns) TOH min (ns) * y TOD max (ns) S t a t i c ? TWP min (ns) ft RAM (65, & TDS 536x4) m "ns) TDH min (ns) TWD min (ns) TWH max (ns) V D D or V C C (V) 2 8 P I N X m I DP max (mA)

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

KM68512

Abstract: 12BKX8 km6865b
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs

R0310

Abstract: 64KX4 samsung CMOS SRAM 28-pin SOJ SRAM
Contextual Info: I SAMSUNG ELECTRONICS INC b?E D m 7Tbm42 KM 64258B 00175fc.b Ö2T SI1GK CM OS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (m ax.)