004MAX Search Results

ic tba 220

Abstract: km6161002j KM6161002-17
Contextual Info: SAMSUNG ELEC T R O N I C S INC b7E D • □ □ 1 7 b clö SID SriGK PRELIMINARY KM6161002 CMOS SRAM 65,536 WORD x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby (TTL)

Contextual Info: REV. 2.1 FS8802-DS-21_EN Datasheet FS8802 High Efficiency Low Start-up Voltage Step-up DC-DC Converter SEP 2006 FS8802 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan

TI41

Contextual Info: SAMSUNG ELECTRONICS INC b7E D m 7^4142 KM64B258A 0017500 ITT SMGK BiCMOS SRAM 65,536 WORD x 4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.)

E43028

Abstract: NC2EBD-DC12V NC2D-JP-DC48V NC2-PS DC 3V relay 0.5A 220v ac DC 5V to DC 100V CIRCUIT DIAGRAM NC4D-JP-DC12V NC2EBD-DC24V NC2D-JP-DC12V NC2D-JP-DC24V
Contextual Info: NC Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat

nc2d-p-ac24v

Abstract: NC2D-P-AC12V NC2D-JP-DC48V NC2D-AC100V 500va sine wave ups NC2D-JP-DC12V NC2D-JP-DC24V NC4D-AC100V NC2EBD-JP-DC24V NC2EBD-JP-DC12V
Contextual Info: NC 4 Form C Flat type 2 Form C Flat type 4 Form C Slim type PC board 2 Form C Slim type (PC board) FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat electromagnetic design achieves

Contextual Info: M O SE L V IT E L IC V62C21162048 128K x 16 LOW POWER, LOW VOLTAGE SRAM PRELIMINARY INFORMATION Features Description • ■ ■ ■ ■ ■ ■ ■ The V 62C 21162048 is a 2,097,152-bit static random-access memory organized as 131,072 words by 16 bits. Inputs and three-state outputs are

Contextual Info: SAMSUNG E L E C T R O N I C S I NC h7E T> m 7^4142 00171332 35Ô M S I I G K PRELIMINARY KM616V513 CMOS SRAM 32,768 W O R D x 16 B it High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time: 17, 20, 25ns (Max.) • Low Power Dissipation

xxww

Abstract: KM68B257AJ-8
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 clb 4 m s []0 1 7 b 0 1 7 5 H m s h g k BiCMOS SRAM KM68B257A 32,768 WORD x 8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fa s t A c c e s s T im e : 8 , 9 , 1 0 , 12n s M a x. • Low P o w er D issipation

HY62U16100

Abstract: HY62U16100LLR2-I
Contextual Info: "HYUNDAI h y 6 2 V 1 6 1 0 0 - I /h y 6 2 U 1 6 1 0 0 -(I) 1 Series 64Kx16bit CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62V16100-(l)/HY62U16100-(l) is a high­ speed, low power and 1M bits CMOS SRAM organized as 65,536 words by 16 bits. The HY62V16100-(I)/ HY62U16100-(I) uses sixteen

package tsop1 28

Abstract: AX1127 0R015 PACKAGE DIMENSIONS 100-TQFP-1420A
Contextual Info: PACKAGE DIMENSIONS Unit : mm/inch 445 ELECTRONICS PACKAGE DIMENSIONS Unit : mm/inch 2 8 -D IP -3 0 0 2 8 -D IP -4 0 0 446 ELECTRONICS PACKAGE DIMENSIONS Unit : mm/inch 2 8 -D IP -6 0 0 B 3 2 -D IP -4 0 0 447 ELECTRONICS PACKAGE DIMENSIONS Unit : mm/inch 3 2 -D IP -6 0 0

28DIP300

Abstract: 24-DIP-300 28-DIP-300 J400 32-TS0P1-0814F 28-SOJ-300 28-DIP-600B
Contextual Info: P A C K A G E DIMENSIONS Unit : mm/inch 24-DIP-300 485 ELECTRONICS PA C K A G E DIMENSIONS Unit : mm/inch 28-DIP-300 486 ELECTRONICS PA C K A G E DIMENSIONS Unit : mm/inch 28-DIP-600B 487 ELECTRONICS PA C K A G E DIMENSIONS Unit : mm/inch 32-DIP-600 488 ELECTRONICS

Contextual Info: Fo r tun e FS8802 Semiconductor Corporation 富晶半導體股份有限公司 High Efficiency Low Start-up Voltage Step-up DC-DC Converter Features General Description 1.0V Low Start-up Input Voltage at 1mA Load Deliver 3.3V at 100mA with 1V Input Voltage

schematic diagram converter input 24v to 12v

Abstract: FS8802CS
Contextual Info: Fo r tun e FS8802 High Efficiency Low Start-up Voltage Step-up DC-DC Converter Semiconductor Corporation 富晶半導體股份有限公司 General Description Features The FS8802 is a compact, high-efficiency, step-up DC/DC converter that operates from an

Contextual Info: SMM-120-02-^ D-P SM M —12 4 - 0 2 - S - S auria^e S M . • . . • T j . I l i i n o H I G H R High reliability Tiger Eve contacts Ava. able with cpkonal Pick-anci-Place pads SPECIFICATIONS Materials:

KM6164002j

Abstract: KM6164002 ISE Electronics
Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^4145 DD177BD ST7 PRELIMINARY KM6164002 spigk CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)

Contextual Info: SAMSUNG ELECTRONICS INC b 7 E D • 7 ^ 4 1 4 2 G O lT b E M KM616513 2 5 1 SM6K CMOS SRAM 32,768 WORD x 16 BIT FEATURES GENERAL DESCRIPTION • F a s t A cc e s s T im e 15, 17, 20, 25ns m ax. • Low P o w er D is sip a tio n S tandb y (TTL) : 5 0m A (m ax.)

R0310

Abstract: 64KX4 samsung CMOS SRAM 28-pin SOJ SRAM
Contextual Info: I SAMSUNG ELECTRONICS INC b?E D m 7Tbm42 KM 64258B 00175fc.b Ö2T SI1GK CM OS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (m ax.)

KM681001J

Abstract: KM681001 KM681001-20 KM681001-35 KM681001-25 KM681001P
Contextual Info: SAMSUNG ELECTRONICS INC L.7E D • 7^4142 0D17b7b KM681001 bST SMGK CMOS SRAM 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2mA (max.)

Matsushita nc2d ac100v

Abstract: NC2D-JPL2-DC48V NC2D-JPL2-DC24V NC2D-JP-DC12V NC2D-JP-DC24V NC2D-JP-DC48V Matsua relay nt NC2-PS
Contextual Info: NC FLAT/VERTICAL TYPE HIGH POWER BIFURCATED CONTACT 4 Form C Flat type 2 Form C Flat type 4 Form C Slim type PC board 2 Form C Slim type (PC board) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat electromagnetic design achieves