64KX16BIT Search Results

Contextual Info: HY62QF16100 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16100 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62QF16100 uses high performance full CMOS process technology and designed for high speed low power circuit

Contextual Info: HY62SF16100C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62SF16100C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62SF16100C uses high performance full CMOS process technology

Contextual Info: HY62UF16100C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16100C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16100C uses high performance full CMOS process technology and designed for high speed low

HY6316100

Contextual Info: H Y 6 3 1 6 1 O O A S /H Y 6 3 1 6 1 O O A L •HYUNDAI 64Kx16bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY6316100 is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16-bits. The HY6316100 uses sixteen common input and output lines and has an output enable pin

SM-1994

Abstract: A2000V
Contextual Info: HY62UF16100/ HY62QF16100/ HY62EF16100/ HY62SF16100 Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16100 / HY62QF16100 / HY62EF16100 / HY62SF16100 is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The

VDR 0047

Abstract: HY63V16100A
Contextual Info: HY63V16100A Series 64Kx16bit CMOS Fast SRAM PRELIMINARY DESCRIPTION FEATURES The HY63V16100A is a 1,048,576-bit high-speed, SRAM organized as 65,536 words by 16 bits. The HY63V16100A uses sixteen common input and output lines and has an output enable pin which

EM064J16B

Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM064J16 Preliminary EM064J16 64Kx16bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM064J16 is an integrated memory device containing a low power 1 Mbit Static Random

SM-1994

Abstract: HY62UF16101C
Contextual Info: HY62UF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 03 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others

Contextual Info: HY62QF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 03 Divide output load into a couple of factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW

Contextual Info: HY62QF16100C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62QF16100C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62QF16100C uses high performance full CMOS process technology

HY62UF16101LLM

Contextual Info: HY62UF16101 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16101 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101 uses high performance full CMOS process technology and designed for high speed low power circuit

Contextual Info: HY62UF16100 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16100 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16100 uses high performance full CMOS process technology and designed for high speed low power circuit

Contextual Info: HY62UF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 03 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others

Contextual Info: HY62SF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 1.8V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 03 Divide output load into a couple of factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW

Contextual Info: HY62QF16101C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62QF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62QF16101C uses high performance full CMOS process technology and designed for high speed low

Contextual Info: HY63V16100AS/HY63V1610OAL HYUNDAI 64Kx16bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY63V16100 is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16-bits. The HY63V16100 uses sixteen common input and output lines and has an output enable

HY62U16100

Abstract: HY62U16100LLR2-I
Contextual Info: "HYUNDAI h y 6 2 V 1 6 1 0 0 - I /h y 6 2 U 1 6 1 0 0 -(I) 1 Series 64Kx16bit CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62V16100-(l)/HY62U16100-(l) is a high­ speed, low power and 1M bits CMOS SRAM organized as 65,536 words by 16 bits. The HY62V16100-(I)/ HY62U16100-(I) uses sixteen

Contextual Info: HY62SF16100 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF16100 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62SF16100 uses high performance full CMOS process technology and designed for high speed low power circuit

HY62SF16101C

Contextual Info: HY62SF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 1.8V Super Low Power Full CMOS Slow SRAM Revision History Revision No 03 04 History Divide output load into a couple of factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others Add marking information

v.27 fax decode

Abstract: EM064C16T
Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM064C16 EM064C16 Family 64Kx16bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM064C16 is an integrated memory device containing a low power 1 Mbit Static Random

CMOS 4091

Abstract: HY62SF16101C
Contextual Info: HY62SF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 1.8V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 03 Divide output load into a couple of factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW

Contextual Info: HY62UF16101 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16101 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101 uses high performance full CMOS process technology and designed for high speed low power circuit

SM-1994

Contextual Info: HY62UF16101C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101C uses high performance full CMOS process technology

Contextual Info: Preliminary CMOS SRAM KM616FS2000Z, KM616FR2000Z Family 64Kx16bit Super Low Power and Low Voltage Full CMOS SRAM with 4S-CSP Chip Scale Package FEATURES SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4pm Full CMOS The KM616FS2OO0Z and KM616FR20Q0Z fam ily are fabri­