KM6164002 Search Results
KM6164002 Datasheets (83)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| KM6164002 | Samsung Electronics | CMOS SRAM | Original | 169.85KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002A | Samsung Electronics | x16 SRAM | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002A-15 | Samsung Electronics | 256K x 16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002A-17 | Samsung Electronics | 256K x 16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002A-20 | Samsung Electronics | 256K x 16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002AE-15 | Samsung Electronics | 256K x 16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002AE-17 | Samsung Electronics | 256K x 16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002AE-20 | Samsung Electronics | 256K x 16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002AI-15 | Samsung Electronics | 256K x 16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002AI-17 | Samsung Electronics | 256K x 16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002AI-20 | Samsung Electronics | 256K x 16 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002AJ-15 | Samsung Electronics | 256K x 16 Bit High-Speed CMOS Static RAM | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002AJ-17 | Samsung Electronics | 256K x 16 Bit High-Speed CMOS Static RAM | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002AJ-20 | Samsung Electronics | 256K x 16 Bit High-Speed CMOS Static RAM | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002AJE-20 | Samsung Electronics | 256K x 16 Bit High-Speed CMOS Static RAM | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002AJI-15 | Samsung Electronics | 256K x 16 Bit High-Speed CMOS Static RAM | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002AJI-17 | Samsung Electronics | 256K x 16 Bit High-Speed CMOS Static RAM | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002AJI-20 | Samsung Electronics | 256K x 16 Bit High-Speed CMOS Static RAM | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002AT-15 | Samsung Electronics | 256K x 16 Bit High-Speed CMOS Static RAM | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KM6164002AT-17 | Samsung Electronics | 256K x 16 Bit High-Speed CMOS Static RAM | Original | 200.15KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
KM6164002 Price and Stock
Samsung Semiconductor & Electro-Mechanics KM6164002BJ-12SRAM Chip Async Single 5V 4M-bit 256K x 16 12ns 44-Pin SOJ |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KM6164002BJ-12 | 2,106 |
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Samsung Semiconductor & Electro-Mechanics KM6164002AJ20SRAM Chip Async Single 5V 4M-bit 256K x 16 9ns 44-Pin SOJ |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KM6164002AJ20 | 454 |
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Samsung Electro-Mechanics KM6164002AJ-20SRAM Chip Async Single 5V 4M-bit 256K x 16 9ns 44-Pin SOJ |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KM6164002AJ-20 | 326 |
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KM6164002AJ-20 | 120 |
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| KM6164002AJ-20 | 3 |
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| KM6164002AJ-20 | 2 |
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Samsung Semiconductor & Electro-Mechanics KM6164002AJ-17HIGH SPEED STATIC RAM |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KM6164002AJ-17 | 286 |
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Samsung Semiconductor & Electro-Mechanics KM6164002AJ-15HIGH SPEED STATIC RAM |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KM6164002AJ-15 | 17 |
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KM6164002 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Z812Contextual Info: KM6164002/L CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60 mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500/; A (Max) Operating : KM6164002-20 : 250mA (Max.) |
OCR Scan |
km6164002/lkm6164002-20250makm6164002-25+6 | |
KM6164002J-20
Abstract: KM6164002J20
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OCR Scan |
km6164002km6164002j-20240makm6164002j-25+6 | |
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Contextual Info: Preliminary KM6164002C/CL, KM6164002CI/CLI CMOS SRAMI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Rev. 0.0 Initial release with Preliminary. |
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km6164002c/clkm6164002ci/cli256kx16km61640 | |
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Contextual Info: Preliminary KM6164002A CMOS SRAM 25 6K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2,1 5,20 n s M a x • Low Pow er Dissipation Standby (TTL) : 5 0 m A (M ax.) Th e K M 6 1 6 4 00 2 A is a 4 ,1 9 4 ,3 0 4 -b it high-speed Static |
OCR Scan |
km6164002a | |
KM616400Contextual Info: PRELIMPreliminaryPPPPPPPPPINARY PRELIMINARY CMOS SRAM KM6164002B, KM6164002BI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data |
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km6164002bkm6164002bi256kx1644-tsop2-400f+1 | |
512X16
Abstract: KM6164002B 512X16 sram
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OCR Scan |
km6164002bkm6164002bi256kxi/o16+5 | |
KM6164002jContextual Info: KM6164002/KM6164002L CMOS SRAM 2 5 6 K x 16 Bit High-Speed CM O S Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):10 mA(Max.) 500|iA(Max.) L-Ver Operating KM6164002/L-20 : 240 mA(Max.) |
OCR Scan |
km6164002/km6164002l256kx500nakm6164002/l-20+7 | |
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Contextual Info: P r r ^ - m in e ^ Y KM6164002B, KM6164002BI CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N •• Fast Access Time 10,12,15* • Max. - Low Power Dissipation The KM6164002B is a 4,194,304-bit high-speed Static Random |
OCR Scan |
km6164002bkm6164002bi304-bit71b4142+3 | |
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Contextual Info: KM6164002B, KM6164002BI CMOS SRAM Document Tills 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997 |
OCR Scan |
km6164002bkm6164002bi256kx1644-tsop2-400f | |
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Contextual Info: Preliminary CMOS SRAM KM6164002B, KM6164002BI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target. |
OCR Scan |
km6164002bkm6164002bi256kx1644-soj-400+2 | |
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Contextual Info: PRELIMPreliminaryPPPPPPPPPINARY Preliminary CMOS SRAM KM6164002C, KM6164002CI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. |
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km6164002ckm6164002ci256kx1625/typ+1 | |
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Contextual Info: KM6164002A, KM6164002AE. KM6164002Al CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History B fiX tia . H istory Rev. 0.0 initial release with Design Target. |
OCR Scan |
km6164002akm6164002aekm6164002al256kx16+6 | |
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Contextual Info: PRELIMPreliminaryPPPPPPPPPINARY KM6164002B, KM6164002BI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Design Target. |
Original |
km6164002bkm6164002bi256kx16250ma+3 | |
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Contextual Info: PRELIMPreliminaryPPPPPPPPPINARY Preliminary CMOS SRAM KM6164002C, KM6164002CI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. |
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km6164002ckm6164002ci256kx16190ma+4 | |
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Contextual Info: KM6164002/KM6164002L CMOS SRAM 256Kx 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 10 mA(Max.) 500|iA(Max.) - L-Ver Operating KM6164002/L-20 : 240 mA(Max.) |
OCR Scan |
km6164002/km6164002l256kxkm6164002/l-20km6164002/l-25+4 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b4E D 7 = ^4 1 4 2 0D14230 1ST ADVANCE INFORMATION KM6164002 CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 60mA (max.) |
OCR Scan |
0d14230km6164002km6164002j-15280ma+6 | |
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Contextual Info: SAMSUNG ELECTRONICS INC b?E D • D0177B0 5T7 PRELIMINARY KM6164002 CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA(Max.) |
OCR Scan |
d0177b0km6164002km6164002j-20240ma+5 | |
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Contextual Info: KM6164002/KM6164002L CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMC>S):10 mA(Max.) 500|iA(Max.) L-Ver Operating KM6164002/L-20 : 240 mA(Max.) |
OCR Scan |
km6164002/km6164002lkm6164002/l-20km6164002/l-25km6164002/l-35+4 | |
d5101
Abstract: C5VI
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OCR Scan |
km6164002akm6164002aekm6164002ai210ma+5 | |
256x16* STATIC RAM
Abstract: KM6164002j KM6164002 KM6164002E KM6164002I SRAM sheet samsung
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km6164002km6164002ekm6164002i44-soj-400+4 | |
KM6164002AContextual Info: PRELIMINARY KM6164002A, KM6164002AE, KM6164002AI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. |
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km6164002akm6164002aekm6164002ai256kx16+3 | |
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Contextual Info: KM6164002A CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Jun. 14th, 1996 |
OCR Scan |
km6164002a256kx16/20ns15/17/20ns | |
71L414E
Abstract: KIVI6164002A KM6164002A KM6164002A-15 KM6164002A-17 KM6164002A-20
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OCR Scan |
kivi6164002a256kxkm6164002ai/o16+7 | |
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Contextual Info: KM6164002B, KM6164002Bi CMOS SRAM 2S6KX16 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N • Fast Access Time 10,12,15ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM6164002B-10 : 260mA(Max.) |
OCR Scan |
km6164002bkm6164002bi2s6kx16km6164002b-10+4 | |