512X16 Search Results

1DT7

Abstract: 72125
Contextual Info: INTEGRATED 3ÔE D • 4ÛSS771 ÜQDhBQS 3 ■ IDT _ T - H f e - S S - DEVICE CMOS PARALLEL-TO-SERIAL FIFO IDT721Q5 IDT72115 IDT72125 256 x16, 512x16,1024x 16 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • •

VRAM

Abstract: Dual-Port V-RAM sam plus SDQ14 sdc1 flash MT42C256
Contextual Info: ADVANCE M T42C 256K 16C 1 2 56K x 16 V R A M |U |IC R O N 256K x 16 DRAM WITH 512x16 SAM FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout, tim ing and functions • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply

se 140

Contextual Info: MOSEL M S 72105 / 72115 256x16 & 512x16 Parailel-to-Serial FIFOs PRELIMINARY FEATURES DESCRIPTION • 2 5n s para lle l p ort a ccess tim e The M S 7 21 0 5 and M S 7 21 1 5 are hig h -sp ee d , low pow e r 16-bit p a ra lle l-to -se ria l FIFO s. T h e se FIFO s a re w ell su ited fo r any

512X16 sram

Abstract: SRAM timing static SRAM single port
Contextual Info: d110001 512X16, Mux 8, Drive 3, Non-Pipelined High-Speed Single-Port Synchronous SRAM Features Memory Description • Precise Optimization for Infineon’s C9DD1 0.20µm The 512X16 SRAM is a high-performance, synchronous single-port, 512-word by 16-bit memory designed to

"Video RAM"

Abstract: Video RAM SIO11 AK5216256WV-10 AK5216256WV-12 AK5216256WV-80 512X16 si08 VIDEO module
Contextual Info: ACCUTEK MICROCIR CU IT 3TE D • 01D7ti47 GODDOS"] 3 ■ ACU T-46-23-20 ACCUTEK MICROCIRCUIT AK5216256WV 256Kx 16/512x16 Dual Port Video RAM DESCRIPTION The Accutek AK5216256 is a 4 MEG-bit Dual Port Dynamic Memory Video Module. The module contains a 256K x 16 DRAM

Contextual Info: MOSEL M S 7 2 1 05/ 72115 256x16 & 512x16 Parallel-to-Serial FIFOs PRELIMINARY DESCRIPTION FEATURES 25ns parallel port access time 50MHz serial output port shift rate Easily expandable in both word width and depth Asynchronous and simultaneous read/write operation

Contextual Info: MI CR ON T E C H N O L O G Y bOE D INC 000^^23 AMT • PIRN ADVANCE MT42C256K16C2 256K X 16 VRAM I^ IK Z R O N VRAM 256K X 16 DRAM WITH 512x16 SAM FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout, timing and functions • High-performance, CMOS silicon-gate process

d17103

Abstract: 17p104 KT77 RAM16X 7ROM 9706t SKE 1/17 PD17103GS m1b2 ic9162
Contextual Info: MOSjjSÌBHÈè M O S In te g ra te d C ircuit A*PD17103 A1 //PD17103(A1 ) l i , ROM1 K / W h (512X161=7 h) , RAM16X 4 ti 7 h, l/0 < K -M “ • V - f? P = !> < h P - 7 t îo C P U K t ì, / ; l ^ ^ $ Î ) J : i ' 7 ’ P ^ 7 Ï X f t f B Ì f à X ' t o titz, T ^ T 0 ï ^ t ï 1 6 t i y

fs3tm

Abstract: CPU01 for satio 17p104 ICT PRC S7 FZ77 17108L fs3t
Contextual Info: 4 t f 'y b • > ? V ^- 7 7 ° * 7 ^ f ^ a 3 > F P “ /¿PD17108L i, R O M lK ^ - f I' (512x16), R A M 16X 4kf*y h , I/O # - h 16 7 t i t l ' $ ? -f - • -7-i 3 □ a > h □ — 7 T 'T 0 1 .5 JTuT'ffl t3 /c V A' *b n T ilf t /c tó, U ^ A ^ t i l 1 # i fc tisj&lvffi 2

Contextual Info: ADVANCE MT42C256K16A1 256K X 16 VRAM | ^ IC = R O N VRAM 256Kx 16 DRAM WITH 512x16 SAM FEATURES • • • • • • • PIN ASSIGNMENT Top View Industry standard pinout, timing, and functions High-performance, CMOS silicon-gate process Single +5V ±10% power supply

sk 8060

Abstract: 8060c 17p107 KT77 CDA MC UM 7107 D17107 17P103 17p104 BR-F SI-F
Contextual Info: M O S m i» lU i& M O S Integrated C ircu it P i 4 t : 7 h - ' » 1 D 7 1 7 , 1 7 1 7 A i <7)\s3- " j - f ' - * 4 0 P 3 > h n - 7 /¿PD17107liROM1 K / W h (512X16t:-y h) , RAM 16X 4 ti' 7 K 1/0*°- h 11 £ t lT ^ - 5 £ -f “ T-f ? □ = !> h P - 7 t ' t o

MT42C256K16A

Contextual Info: ADVANCE M T42C256K16A1 256K X 16 VRAM | U |IC R O N 256K x 16 DRAM WITH 512x16 SAM VRAM PIN ASSIGNMENT Top View • Industry-standard pinout, tim ing and functions • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply (consult factory regarding 3.3V operation)

MT42C256K16A

Abstract: MT42C256
Contextual Info: ADVANCE MT42C256K16A1 256K X 16 VRAM M IC R O N VRAM 256Kx 16 DRAM WITH 512x16 SAM PIN ASSIGNMENT T o d View • In d u s try -s ta n d a rd p in o u t, tim in g a n d fu n ctio n s • H ig h -p e rfo rm a n c e , C M O S silicon-gate p ro cess • Single +5V ±10% p o w e r s u p p ly

Contextual Info: MI CR ON T E C H N O L O G Y INC bDE D bl l l S H T D O D b TE l T77 • MRN ADVANCE MT42C256K16C1 256K X 16 VRAM VRAM 256K X 16 DRAM WITH 512x16 SAM FEATURES PIN ASSIGNMENT Top View • In d u stry -sta n d a rd p in o u t, tim in g an d fu n ctio n s • H ig h -p erfo rm an ce, C M O S silico n -g a te p ro cess

aef 1000

Abstract: MS72105-25FC MS72105-25NC MS7211 P28-2 64256
Contextual Info: MOSEL MS72105/72115 256x16 & 512x16 Parailel-to-Serial FIFOs PRELIMINARY DESCRIPTION FEATURES 25ns parallel port access time 50MHz serial output port shift rate Easily expandable in both word width and depth Asynchronous and simultaneous read/write operation

Contextual Info: MOSEL ^ M S 7 2 1 0 5 /7 2 1 1 5 256x16 & 512x16 Parailel-to-Serial FIFOs PRELIMINARY FEATURES DESCRIPTION • 25ns parallel port access time The MS72105 and M S 72115 are high-speed, low power 16-bit parallel-to-serial FIFOs. These FIFOs are well suited for any

SDQ11

Abstract: vram dual port 256K X 16 MULTIPORT VIDEO RAM
Contextual Info: ADVANCE MT42C256K16A1 256K x 16 VRAM b l l l S M I D 0 D S 33 7 TS1 URN M IC R O N SSE D MICRON T E C H N O L O G Y INC VRAM 256Kx 16 DRAM WITH 512x16 SAM - 7 - 0 FEATURES Industry standard pinout, timing, and functions

E5771

Abstract: IDT72105 IDT72115 IDT72125 P28-2
Contextual Info: INTEGRATED DEVICE 47E D Bi MÖ2S771 DOO'iMTl fl BlI DT IDT72105 IDT72115 IDT72125 CMOS PARALLEL-TO-SERIAL FIFO 256x16, 512x16,1024x16 T - * f é - 3 ; r Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • T h e ID T7210 5 /7 2 1 1 5 /7 2 1 25 s are very high speed, low

EEPROM MARKING L46

Abstract: rl46 MARKING L66 EEPROM RL56 eeprom EEPROM MARKING rl56 RL66 EEPROM IC rl46 BR93L56
Contextual Info: Datasheet Serial EEPROM Series Standard EEPROM Microwire BUS EEPROM 3-Wire BR93Lxx-W ●General Description BR93Lxx-W is serial EEPROM of serial 3-line interface method ●Features „ 3-line communications of chip select, serial clock, serial data input / output (the case where input and output are shared)

K6F8016R6C

Contextual Info: K6F8016R6C Family CMOS SRAM Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft February 7, 2003 Preliminary 1.0 Finalize July 3, 2003 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

K6F8016U6C

Contextual Info: Preliminary CMOS SRAM K6F8016U6C Family Document Title 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial draft Draft Date Remark May 1, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

Contextual Info: TMS320C5x, TMS320LC5x DIGITAL SIGNAL PROCESSORS SPRS030A – APRIL 1995 – REVISED APRIL 1996 D D D D D D D D D D D D D D D Powerful 16-Bit TMS320C5x CPU 20-, 25-, 35-, and 50-ns Single-Cycle Instruction Execution Time for 5-V Operation 25-, 40-, and 50-ns Single-Cycle Instruction

TMS320LC51

Contextual Info: TMS320C5x, TMS320LC5x DIGITAL SIGNAL PROCESSORS SPRS030A – APRIL 1995 – REVISED APRIL 1996 D D D D D D D D D D D D D D D Powerful 16-Bit TMS320C5x CPU 20-, 25-, 35-, and 50-ns Single-Cycle Instruction Execution Time for 5-V Operation 25-, 40-, and 50-ns Single-Cycle Instruction