210MA Search Results

Contextual Info: Cell Type N-700AAC Specifications Nominal Capacity Nominal Voltage 700mAh 1.2V Standard 70mA Charging Current Quick 210mA Fast 1050mA Standard 14 to 16Hrs. Charging Time Quick 4 to 6Hrs. Fast about 1Hr. Standard 0°C to +45°C [+32°F to 113°F] Charge Quick

A61L73081

Abstract: A61L73081S-12 A61L73081S-15 A61L73081SW-12 A61L73081SW-15
Contextual Info: A61L73081 Series 128K X 8 BIT HIGH SPEED CMOS SRAM Document Title 128K X 8 BIT HIGH SPEED CMOS SRAM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue July 14, 2000 Preliminary 1.0 Change ICC1 from 120mA to 220mA April 26, 2001 Final 100mA to 210mA

Contextual Info: .900 MAX .410 MAX. 1/4 .210MAX. BLUE BEAD =^5 =^5) .810 MAX 1.062 1.320 MAX =^> =*3 «31 DRILL .120 DIA. 2 HOLES REV. 1 .3 7 0 0 4 0 -,0 4 5 7 /9 /9 2 COIL: § +25° C CUSTOMER DATA SHEET 675 OHMS i 10% RESISTANCE . NOMINAL VOLTAGE 26.5 VDC MUST OPERATE _

N-700AAC

Contextual Info: Cell Type N-700AAC Specifications Nominal Capacity Nominal Voltage H D d H Dimensions of Bare Cell D d 49.5 ±0.3 1.948 ±0.012 13.8 ±0.2 0.543 ±0.008 7.0 0.276 mm inch mm inch mm inch 700mAh 1.2V Standard 70mA Charging Current Quick 210mA Fast 1050mA Standard

Contextual Info: TGA4036 19 - 38 GHz Medium Power Amplifier Key Features • • • • • • • Frequency Range: 19 - 38 GHz 20 dB Nominal Gain 22 dBm Nominal Psat 30 dBm Nominal TOI Bias: 5 V, 160 mA 210mA @ P1dB 0.25 um 3MI pHEMT Technology Chip Dimensions 1.69 x 0.75 x 0.10 mm

Contextual Info: Spec Sheet INDUCTORS Axial Leaded Inductors LAL02VD3R3K Features Item Summary 3.3 H ±10% , 210mA, 40, Leaded Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 3.4(max)x2.3(max)mm

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2016T680K Features Item Summary 68 H(±10%), 90mA, 210mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ0603S3N8C-T Features Item Summary 3.8nH(-0.2nH to +0.2nH), 210mA, 13, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum)

2N7002 equivalent

Abstract: 2N7002Q-7-F
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2016T150K Features Item Summary 15 H(±10%), 210mA, 440mA, 0806 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

HHR210AH

Abstract: 2050mAh
Contextual Info: NICKEL METAL HYDRIDE BATTERIES: INDIVIDUAL DATA SHEET Typical Charge Characteristics HHR210AH Cylindrical A size HR 17/50 Dimensions (with Tube) (mm) 2.0 1.9 Charge:210mA(0.1 It)✕16hrs. 1.8 Voltage (V) 1.7 1.6 1.5 1.4 1.3 1.2 1.1 +0 0.7 17.0 - -10˚C 25˚C

Contextual Info: CMOS SRAM KM684002B, KM684002BI 512Kx8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 10,12,15ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM684Q02B - 1 0 :210mA(Max.) KM684002B -12 : 205mA(Max.)

Contextual Info: Spec Sheet INDUCTORS Axial Leaded Inductors LAP02TA3R3K Features Item Summary 3.3 H ±10% , 210mA, 40, Leaded Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 3.4(max)x2.3(max)mm

A705R

Abstract: A705NFT-210 A705T A705NFT-250 A705NFT-270 A705NFT-290 A705 A705NFT-230 DSA00251324 MARKING CODE 10c sot-89
Contextual Info: A705 200mA ~ 300mA ADVANCED CURRENT REGULATOR www.addmtek.com DESCRIPTION FEATURES The A705 is a low dropout current regulator rated for 210mA, 230mA, 250mA, 270mA, and 290mA constant sink current. The low quiescent current and low dropout voltage are achieved by advanced Bi-CMOS

Contextual Info: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ0603S5N1C-T Features Item Summary 5.1nH(-0.2nH to +0.2nH), 210mA, 13, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum)

optical millimeter wave optical

Abstract: K-04211GX-P
Contextual Info: K-04211GX-P LCD BACK LIGHT, COB TYPE, LCD CHARACTER 20 X 2 Part No. Luminous Area mm K-04211GX-P 20.0X85.0mm Chip Raw Material Emitted Color GaP Yellow Green Wave Length λp(nm) 570 Electro-Optical Characteristics 2 Iv(cd/m ) Input Current Typ. IF =210mA

Contextual Info: CMOS SRAM KM616513 32,768 WORD x 16 BIT High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 5 ,1 7 ,2 0 ,25ns max. • Low Power Dissipation Standby (TTL) : 50 mA (max.) (CMOS): 1mA (max.) Operating KM616513-15 :210mA (max.) KM616513-17 : 200mA (max.)

Contextual Info: .875MAX.- - I- .400 MAX . v .210MAX. BLUE BEAD I rl1 1'\ Ill r"\ ='~ ~ ~ ='» u ='» ~LI\J .I ~ - t]l'\ 11 =c "' M.I\J 11.1. .030 •.002 DIA COIL RESISTANCE NOMINAL VOLT AGE MUST OPERATE MUST RELEASE SHOCK 10 100 TEMPERATURE g•s -65 6 •c .200 I I BLUE BEAD/

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2518T151K Features Item Summary 150 H(±10%), 55mA, 210mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2518T151K Features Item Summary 150 H(±10%), 55mA, 210mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

k72 diode

Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance

d5101

Abstract: C5VI
Contextual Info: KM6164002A, KM6164002AE, KM6164002AI CMOS SRAM 2S6K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17, 20ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : tOmA(Max ) Operating KM6164002A -1 5 : 210mA(Max.)

TGA4036

Contextual Info: Advance Product Information December 9, 2004 19 - 38GHz Medium Power Amplifier TGA4036 Key Features • • • • • • • Frequency Range: 19 - 38 GHz 20 dB Nominal Gain 22 dBm Nominal Psat 30 dBm Nominal TOI Bias: 5 V, 160 mA 210mA @ P1dB 0.25 um 3MI pHEMT Technology

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2518T151K Features Item Summary 150 H(±10%), 55mA, 210mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions