KM684002BJ Search Results
KM684002BJ Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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KM684002BJ-10 |
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512K x 8 Bit High-Speed CMOS Static RAM | Original | 188.35KB | 8 | ||
KM684002BJ-12 |
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512K x 8 Bit High-Speed CMOS Static RAM | Original | 188.35KB | 8 | ||
KM684002BJ-15 |
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512K x 8 Bit High-Speed CMOS Static RAM | Original | 188.35KB | 8 | ||
KM684002BJI-10 |
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512K x 8 Bit High-Speed CMOS Static RAM | Original | 188.35KB | 8 | ||
KM684002BJI-12 |
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512K x 8 Bit High-Speed CMOS Static RAM | Original | 188.35KB | 8 | ||
KM684002BJI-15 |
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512K x 8 Bit High-Speed CMOS Static RAM | Original | 188.35KB | 8 |
KM684002BJ Price and Stock
Samsung Electro-Mechanics KM684002BJ-10STANDARD SRAM, 512KX8, 10NS, CMOS, PDSO36 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KM684002BJ-10 | 211 |
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Buy Now |
KM684002BJ Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FrelrmiTrsry CMOS SRAM KM684002B, KM684002BI 512 K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION ~ Fast Access Time 10,12,15* “ Max. - Low Power Dissipation Standby (TTL) : 40» • (Max.) The KM684002B is a 4,194,304-bit high-speed Static Random |
OCR Scan |
KM684002B, KM684002BI KM684002B KM684002B- KM684002BJ 36-SOJ-400 KM684002BT 36-TSOP2-400F | |
Contextual Info: CMOS SRAM KM684002B, KM684002BI 512Kx8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 10,12,15ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM684Q02B - 1 0 :210mA(Max.) KM684002B -12 : 205mA(Max.) |
OCR Scan |
KM684002B, KM684002BI 512Kx8 KM684Q02B 210mA KM684002B 205mA 200mA KM684002BJ | |
Contextual Info: PRELIMINARY CMOS SRAM KM684002B, KM684002BI Document Title 512Kx8 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target. |
Original |
KM684002B, KM684002BI 512Kx8 200mA 190mA 180mA 210mA 205mA 200mA008 36-TSOP2-400F | |
Contextual Info: PRELIMINARY CMOS SRAM KM684002B, KM684002BI Document Title 512Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target. |
Original |
KM684002B, KM684002BI 512Kx8 200mA 190mA 180mA 36-TSOP2-400F 002MIN | |
Contextual Info: F re liiv m -y KM684002B, KM684002BI CMOS SRAM 512K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 10,12,15* Max. - Low Power Dissipation Standby (TTL) : 40* • (Max.) (CM O S): 10» »(Max.) Operating KM684002B -1 0 : 200««(Max.) |
OCR Scan |
KM684002B, KM684002BI KM684002B KM684002B-12 KM684002BJ 36-SOJ-400 KM684002BT 36-TSOP2-400F | |
philips diode PH 33J
Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
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Original |
10-BIT QS3L384) QS3L2384 QS3L384 QS3L2384 philips diode PH 33J UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY | |
UM61256FK-15
Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
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Original |
74F257, 74FCT257, 74FCT257T QS32257 QS3257 QS32257 UM61256FK-15 YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624 |