205MA Search Results

2SD2155

Abstract: 2SB1429 55NO
Contextual Info: 2SB1429 * < 4 • mm 205MAX. • « it m -r r , • 2 S D 2 1 5 5 ¿ 3 ' y - f > > y 9 'J K .t£ * l i * » • 100W : vC EO - - i 8 o v a * * ) 7 r A * - 7 r .f * T iX S tt (T.-2S1C ) a C o a w ? * • *< - * M * i£ «Í ff * «L * vCBO -180 V VCEO -180

RCA 40310

Contextual Info: Hometaxial-Base n-p-n Type Selection Charts *FE V C E O sus V C E V (sus) V v •c A V V CE V Temp.—°C V 25 IC A •B A JEDEC TO-39/TO-205M or TO-5/TO-205MA Package T 40 40 40 40 55 55 55 65 140 E CB V £2/40349 FAMILY (n-p-n) Medium Power f = 1.4 MHz typ; P j = 5 W max (2N1482); P j = 8.75 W max (40349)

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB3218T470K Features Item Summary 47 H(±10%), 205mA, 1207 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 1207/3218

p52 sot89

Abstract: marking p52 SOT23-6 design ideas TS16949 ZVN4525Z ZVP4525Z ZVP4525ZTA ZVP4525ZTC complementary MOSFET sot89 p-channel mosfet sot89 5V
Contextual Info: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

Contextual Info: CMOS SRAM KM684002B, KM684002BI 512Kx8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 10,12,15ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM684Q02B - 1 0 :210mA(Max.) KM684002B -12 : 205mA(Max.)

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBL2012T100M Features Item Summary 10 H(±20%), 205mA, 370mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 4000pcs Products characteristics table External Dimensions

Contextual Info: PART NUMBER: 205MABA01KJ# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 2 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C

Contextual Info: PART NUMBER: 205MABA04KH# M O T O R RUN C A P A C IT O R S R A D IA L L E A D E D BOX P a r ts a r e R o H S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e R o H S : 14 ELECTRICAL SPECIFICATIONS C ap acitan c e: 2 uF T o le ra n c e : -10 % . +10 %

100181

Contextual Info: P h ilip s C o m p o n e n t s - S ig n e t ic s 100181 Docum ent No. 8 5 3-1442 E C N No. 99800 Date of Issue Ju ne 14, 1990 Status Product Specification 4—Bit Binary/BCD ALU E C L Products FEATURES •Typical propagation delay: 2.10ns •Typical supply current —lEE : 205mA

2sa1553

Abstract: TOSHIBA 2SA1553
Contextual Info: TOSHIBA Discrete Semiconductors 2SA1553 Transistor Unit in mm 205MAX Silicon PNP Epitaxial Type PCT Process #3-3 ±0.2 For General Purpose Switching and Amplifier Applications Features • Complementary to 2SC4029 • Recommended for 120W High Fidelity Audio Frequency Amplifier

Contextual Info: PART NUMBER: 205MABA03KH# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 2 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C

Contextual Info: Philips Components-Signetics 100180 Docum ent No. 853-0633 ECN No. 99800 Date of Issue June 14, 1990 Status Product Specification High Speed 8-B it Adder ECL Products FEATURES •Typical propagation delay: 2.35ns PIN DESCRIPTION PINS •Typical supply current {—lEE : 205mA

40372 RCA

Abstract: RCA 40310 RCA 40312 40911 40367 2N1479 RCA 40316 40349 rca 40372
Contextual Info: Hometaxial-Base n-p-n Type Selection Charts *FE V C E O sus V C E V (sus) V v •c A V V CE V Temp.—°C V 25 IC A •B A JEDEC TO-39/TO-205M or TO-5/TO-205MA Package T 40 40 40 40 55 55 55 65 140 E CB V £2/40349 FAMILY (n-p-n) Medium Power f = 1.4 MHz typ; P j = 5 W max (2N1482); P j = 8.75 W max (40349)

Contextual Info: PART NUMBER: 205MABA05KJ# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 2 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C

Contextual Info: 3757 W. Touhy Ave., Lincolnwood, IL 60712 847 675-1760 • (847) 673-2850 · www.illcap.com +85°C Motor Run Capacitors radial leaded box Part Number: 205MABA01KH# This part is RoHS compliant Electrical Specifications Capacitance: 2uF Tolerance: -10 %,+10 %

Contextual Info: ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced

Contextual Info: Hometaxial-Base n-p-n Type Selection Charts *FE V C E O sus V C E V (sus) V v •c A V V CE V Temp.—°C V 25 IC A •B A JEDEC TO-39/TO-205M or TO-5/TO-205MA Package T 40 40 40 40 55 55 55 65 140 E CB V £2/40349 FAMILY (n-p-n) Medium Power f = 1.4 MHz typ; P j = 5 W max (2N1482); P j = 8.75 W max (40349)

Contextual Info: PART NUMBER: 205MABA02KI# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 2 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C

Contextual Info: PART NUMBER: 205MABA02KH# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 2 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C

Contextual Info: PART NUMBER: 205MABA04KG# M O TO R RUN CAPACITORS RADIAL LEADED BOX P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 2 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.0006 Max at 1000 Hz and 25°C

7273B

Contextual Info: SSRAM AS5SS256K18 256K x 18 SSRAM PIN ASSIGNMENT Top View Synchronous Burst SRAM, Flow-Through 100-pin TQFP SA SA CE\ CE2 NC NC bwB\ BWa\ CE2\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ SA SA FEATURES VDD NC VSS DQb DQb VDDQ VSS DQb DQb DQPb NC VSS VDDQ NC

Contextual Info: SZA-3044 Z SZA-3044(Z) 2.7GHz to 3.8GHz 5V 1W 2.7GHz to 3.8GHz 5V 1W POWER AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor

TOP210

Abstract: PM130-H1A TOP210 schematic SWITCHING REGULATOR CONTROL CIRCUIT FOR 500 kHz O PM130-H1 schematic diagram of PM130-H1A PM130-R1 flyback transformer pin configuration TOP221 Physical Transformer
Contextual Info: TABLE 1: ELECTRICAL SPECIFICATIONS AT 25 OC FIGURE 1: SCHEMATIC DIAGRAM SWITCHING TRANSFORMER DESIGNED FOR USE WITH POWER INTEGRATIONS PWR-TOP210PFI OR TOP221P REFER TO APPLICATION CIRCUITS OF FIGURE 4. PARAMETER MIN. PRIMARY INDUCTANCE 4-2 VOLTAGE = 0.250Vrms

Contextual Info: HN62321E Series 1M 128K x 8-bit Mask ROM • DESCRIPTION The Hitachi HN62321E Series is a 1-Megabit CMOS Mask Programmable Read Only Memory organized as 131,072 x 8-bit. The low power consumption of this device makes it ideal for battery powered, portable systems. In addition, the high speed