DS11303 Search Results

k72 transistor

Abstract: 2n7002 MARKING k7a transistor marking j5a 2N7002 transistor marking k7A K72 so
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance: R d s <o n Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 -H : h“ A TOP VIEW B C A Mechanical Data l2l Case: SOT-23, Molded Plastic

transistor marking s72

Abstract: transistor s72 k72 transistor 702 TRANSISTOR sot-23 s72 sot 23 k72 transistor sot 23 S72 2n7002 S72 transistor marking 702 2n7002 702
Contextual Info: 2N7002 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~*\ : h - A TOP VIEW

2N7002 equivalent

Abstract: 2N7002Q-7-F
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance

code k72

Abstract: k72 transistor markings 2n7002 2n7002 marking code k72 diode transistor k72 2N7002 2N7002-7-F K72 marking diode 2N*027
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 2

k72 sot-23

Abstract: equivalent of 2N7002 2N7002-7-F k72 transistor sot 23 2N7002 2n7002 marking code device marking k72 sot23 2N7002 equivalent
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free/RoHS Compliant (Note 2)

k72 transistor sot 23

Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 2

2N7002 MARKING

Abstract: 2N7002-13-F k72 transistor sot 23
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1

k72 transistor sot 23

Abstract: k72 sot-23 k72 sot 23 TRANSISTOR
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B C G TOP VIEW S Mechanical Data · · ·

k72 transistor sot 23

Abstract: k72 sot 23 K72 SOT23 2n7002 spice model k72 sot-23
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: 2N7002 Features • · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 Dim Min Max A 0.37 0.51 B

k72w

Abstract: marking symbol ER transistor
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low O n-R esistance: 2.5£2 SOT-23 Low Threshold: 2 .1 V Low Input C apacitance: 2 2 p F - H : h“ A Fast Switching S peed: 7.0ns Low Input/O utput L eakage TOP VIEW B C A l2l , lîl Mechanical Data

k72 diode

Abstract: K72 SOT23 transistor marking k72 code k72 sot23 K72 2N7002 2N7002-7-F k72 transistor sot 23 device marking k72 sot23 k72 device marking
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1

Contextual Info: SPICE MODEL: 2N7002 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage SOT-23 Low Input Capacitance A Fast Switching Speed Available in Lead Free/RoHS Compliant Version

k72 transistor sot 23

Abstract: device marking k72 sot23 k72 transistor k72 sot 23 k72 sot-23 transistor k72 marking k72 transistor marking k7A 2N7002 60V SOT-23 2N7002-7-F
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: 2N7002 Features • · · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version

k72 transistor sot 23

Abstract: 2N7002-7-F K72 SOT23 k72 sot-23
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: 2N7002 Features • · · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version

k72 diode

Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance

Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: 2N7002 Features • · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B C G TOP VIEW S Mechanical Data

Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C 60V 7.5Ω @ VGS = 5V 210mA •        Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it

2N7002

Abstract: 2n7002 MARKING
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D TOP VIEW Mechanical Data · · · · · G

k7a transistor

Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 Dim Min Max A 0.37 0.51

2N7002-13-F

Abstract: 2N7002Q-7-F mosfet 2n7002 2N7002-7-F
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance

k72 transistor sot 23

Abstract: code k72 2N7002-7-F 2N7002 spice k72 sot-23 transistor k72 2N7002 2N7002-7 k72 marking transistor K72 TO
Contextual Info: SPICE MODEL: 2N7002 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage SOT-23 Low Input Capacitance A Fast Switching Speed Available in Lead Free/RoHS Compliant Version

k72 transistor sot 23

Abstract: k72 sot-23 k72 transistor transistor marking k7A 2N7002-7-F K72 TO 2N7002 MARKING 2N7002 spice k72 sot 23 transistor k72
Contextual Info: SPICE MODEL: 2N7002 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage SOT-23 Low Input Capacitance A Fast Switching Speed Available in Lead Free/RoHS Compliant Version

Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = +25°C 60V 7.5Ω @ VGS = 5V 210mA •        Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it

Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA •        Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it