71L414E Search Results

pin diagram of 74112

Abstract: ttl 74112 pin diagram of ttl 74112 3B522
Contextual Info: KM684002A CMOS SRAM 512 K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15,17,20* • Max. - Low Power Dissipation Standby (TTL) : 5 0 * (Max.) The KM684002A is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The

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Abstract: KM616V4002A 71L414E
Contextual Info: KM616V4002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15, 17,20* • Max. - Low Power Dissipation Standby (TTL) : 50* • (Max.) The KM616V4002A is a 4,194,304-bit high-speed Static Ran­ dom Access Memory organized as 252,144 words by 16 bits.

Contextual Info: KMM366F400BK KMM366F41OBK DRAM MODULE K M M 366F400B K & KM M 366F410BK ED O Mode w ithout buffer 4Mx64 DRAM DIMM based on 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40 1 0BK is a 4M bit x 64 Dynamic RAM high density memory module. The

Contextual Info: DRAM MODULE KMM372V213BK/BS KMM372V213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V213B is a 2M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V213B consists of nine CMOS

Contextual Info: KM44C1003DT CMOS DRAM ELECTR O NICS 1 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power

Contextual Info: PRELIMINARY INFORMATION KS0122 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required

71L414E

Abstract: KIVI6164002A KM6164002A KM6164002A-15 KM6164002A-17 KM6164002A-20
Contextual Info: KM6164002A CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15, 17, 20* • Max. - Low Power Dissipation Standby (TTL) : 5 0 *‘ (Max.) The KM6164002A is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The

71L414E

Abstract: TA10E
Contextual Info: CMOS SRAM KM62256CLE-LV 32Kx8Bit Extended Voltage & Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Extended Tem perature R ange : -2 5 °C to 85°C • Extended Operating Voltage : 3 .0 -5 .5 V T h e K M 62 2 5 6C L E -L V is a 262,144-bit high-speed Static

km44v4104bk

Abstract: KM44C4104
Contextual Info: K M 4 4 V 4 10 4 B K CMOS D R A M ELECTR O NICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: KM4216C/V258 CMOS VIDEO RAM 2 5 6 K X 16 Bit CMOS Video RAM The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port

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Abstract: taa 723 300MIL
Contextual Info: KM44C4104A/AL/ALL/ASL CMOS DRAM 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: KM44C4104A/AL/ALL/ASL-5 tBAC tCAC tRC tHPC 50ns 13ns 90ns 20ns KM44C4104A/AL/ALL/ASL-6 60ns 15ns 110ns 24ns KM44C4104A/AL/ALL/ASL-7

44V4100

Contextual Info: KM44V4100BK CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily ol 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle