7RB4142 Search Results

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7Rb4142 0017112 THS KM23C32000G CMOS MASK ROM 32M-BH 4M x8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 4,194,304 x 8 (byte mode) 2,097,152 x 16 (word mode) • Fast access time: 150ns (max.)

samsung km28C256

Abstract: KM28C256-15 KM28C256 KM28C256-20 KM28C256I-15 KM28C256I-20
Contextual Info: S A M S UN G E L E C T R O N I C S INC 7Rb4142 ODlk^OM 2 n b?E D KM28C256 CMOS EEPROM 3 2 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C256: Commercial — KM28C256I: Industrial • Simple Byte Write & Page Write

KS0065 332

Abstract: a 4504 KS0068 20405 lcd display M37D 4053 IC circuit diagram Digital Pulse Counter Two Digit fcd 5250 IC CHIP 5270 ks0065
Contextual Info: CMOS DIGITAL INTEGRATED CIRCUIT KS0068 DOT MATRIX LCD CONTROLLER & DRIVER The KS0068 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology 100 QFP FUNCTION • Character type dot m atrix LCD driver & controller • Internal driver: 16 common and 60 segment signal output.

sequential timer working

Abstract: rom 512x4 0011B KS57-series
Contextual Info: KS57C0208 Cl CM ELECTRONICS Mi crocontroll er DESCRIPTION The KS57C0208 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With two 8-bit timer/counters, and 16 n-channel, open-drain I/O pins, the KS57C0208 offers an excellent design solution for a

syncronous

Abstract: KM741006J-10 256kx4 256Kx4 SRAM
Contextual Info: KM741006J 256Kx4 Syncronous SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES • Fast Cycle Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.) • Single 5V ± 5% Power Supply

GG3L

Abstract: 50K1J m0 85a diode diode D3B
Contextual Info: IRFW/IZ24A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175» «Operating Temperature Lower Leakage Current : 10 nA Max. @ VDS = 60V

Contextual Info: KM741006J 256Kx4 Syncronous SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast C y c le Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) KM741006J-12: 180mA (Max.) KM741006J-15: 150mA (Max.)

Contextual Info: K M 4 16 C 2 5 6 D T CMOS D R A M ELECTRONICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: SAMSUNG ELECTRONICS INC b7E D KM48V512A/AL/ALL • TTbMlME DCISTMB 071 «SIICK CMOS DRAM 512K x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C KM48V512A/AL/ALL-7 70ns 20ns 130ns KM48V512A/AL/ALL-8

Contextual Info: KS7306 DIGITAL CAMERA PROCESSOR GENERAL DESCRIPTION KS7306 is a CCD digital signal processor. The electronic video signal that passed the color filter array CFA pattern of CCD is put to the process of dual correlation sampling and then converted to digital video signal by A/D converter.

Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Process Technology : 0.6» • CMOS Organization : 64Kx8 - Power Supply Voltage : Single 5V • • 10% •• Low Data Retention Voltage : 2V Min ~ Three state output and TTL Compatible

Contextual Info: KM44V16000AS CMOS D R AM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,

Contextual Info: SAMSUNG POWER SWITCH KA1L0680 FEATURES TO-3P - Precision fixed operating frequency 50KHz - Pulse by pulse over current limiting - Over load protection - Internal thermal shutdown function - Under voltage lockout - Internal high voltage sense FET - Soft start

Contextual Info: KM732V589/L 32Kx32 Synchronous SRAM 32K X 32-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. • • • • The KM732V589/L is a 1,048,576-bit Synchronous Static Random Access Memory designed for high 2 Stage Pipelined operation with 4 Burst

Contextual Info: KMM364E1600AK/AS KMM364E1680AK/AS DRAM MODULE KMM364E1600AK/AS & KMM364E1680AK/AS Fast Page with EDO Mode 16Mx64 DRAM DIMM based on 16Mx4, 4K & 8K Refresh, 5V FEATURES GENERAL DESCR IPTIO N CMOS 16Mx4bit DRAMs in SOJ/TSOP-II 400mii • Part Identification

Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7 T b 4 m 2 GG177EÔ ÔÛÛ KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.)

Contextual Info: KM416V1004BJ CMOS DRAM ELECTR ONICS 1M x16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: KM44C4004B, KM44C4104B KM44V4004B, KM44V4104B CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

lf7a

Contextual Info: SSP7N60A Advanced Power MOSFET FEATURES BVdss - 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 7 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 mA (Max.) @ V DS = 600V

ssp7n60

Contextual Info: N-CHANNEL POWER MOSFETS SSP7N60/55 FEATURES • Lower R dsion • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

KM44C16100AS

Contextual Info: K M 4 4 C 161 OOAS CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , package type(SOJ or

Contextual Info: KM736V689/L 64Kx36 Synchronous SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION - Synchronous Operation. . 2 Stage Pipelined operation with 4 Burst. - On-Chip Address Counter. . Self-Timed Write Cycle. - On-Chip Address and Control Registers.

SSP5N90

Abstract: 250M
Contextual Info: N-CHANNEL POWER MOSFETS SSP5N90 FEATURES • • • • • • • TO-220 Lower Rds<on Improved Inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

samsung VFD

Abstract: P80-P82 KS57C7002
Contextual Info: KS57C7002 ELECTRONICS Microcontroller DESCRIPTION The KS57C7002 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With VFD direct-drive ports, comparator, 8-bit serial I/O interface, 8-bit timer/counter, watchdog timer, and digital I/O, the