GG177EÔ Search Results
GG177EÔ Datasheets Context Search
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Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7 T b 4 m 2 GG177EÔ ÔÛÛ KM741006J CMOS SRAM 262,144 Words x 4-Bit Synchronous Static Random Access Memory FEATURES GENERAL DESCRIPTION • Fast Access Time: 10, 12.5, 15ns Max. • Low Power Dissipation KM741006J-10: 190mA (Max.) |
OCR Scan |
GG177EÃ KM741006J KM741006J-10: 190mA KM741006J-12: 180mA KM741006J-15: 150mA 400mil KM741006J |