525MIL Search Results

Contextual Info: 40P2M-A EIAJ Package Code SOP40-P-525-1.27 Plastic 40pin 525mil SOP Weight g 1.59 JEDEC Code – Lead Material Alloy 42 e 21 E Recommended Mount Pad Symbol F 20 1 A A2 A1 D L L1 HE e1 I2 40 b2 c e b y Detail F A A1 A2 b c D E e HE L L1 y b2 e1 I2 Dimension in Millimeters

sop40

Abstract: 525-mil SOP40 package
Contextual Info: SANYO Semiconductor Small Outline Package 40Pin Plastic SOP40 525mil Precautions concerning information given on package drawings Basically, SANYO Semiconductor Company’s packages are named and coded in compliance with JEITA regulations (ED-7303A), which stipulate the names and codes for integrated circuit packages. However, the

SOP32 525mil

Abstract: SOP32 525-mil
Contextual Info: SANYO Semiconductor Small Outline Package 32Pin Plastic SOP32 525mil Precautions concerning information given on package drawings Basically, SANYO Semiconductor Company’s packages are named and coded in compliance with JEITA regulations (ED-7303A), which stipulate the names and codes for integrated circuit packages. However, the

SOP44-P-525-1

Contextual Info: 44P2M-A EIAJ Package Code SOP44-P-525-1.27 Plastic 44pin 525mil SOP Weight g JEDEC Code – Lead Material Alloy 42 e 23 E Recommended Mount Pad Symbol F 1 22 A A2 A1 D L L1 HE e1 I2 44 b2 c e b y A A1 A2 b c D E e HE L L1 y Detail F b2 e1 I2 Dimension in Millimeters

i232

Abstract: 525mil
Contextual Info: 32P2M-A Plastic 32pin 525mil SOP EIAJ Package Code SOP32-P-525-1.27 JEDEC Code – Weight g 1.29 Lead Material Alloy 42 e 17 E Recommended Mount Pad Symbol 1 16 F A A2 D e y L b A1 L1 HE e1 I2 32 b2 A A1 A2 b c D E e HE L L1 y c Detail F b2 e1 I2 Dimension in Millimeters

SOP40

Abstract: SOP40 package SOP-40 525-mil
Contextual Info: SANYO Semiconductor Small Outline Package 40Pin Plastic SOP40 525mil 外形図情報に関するご注意 三洋半導体パッケージは基本的に JEITA の名称付与規定（ED-7303A）に準じています。 ただし、従来のパッケージに用いている名称については、そのまま継続しています。

SOP32 525mil

Abstract: SOP32
Contextual Info: SANYO Semiconductor Small Outline Package 32Pin Plastic SOP32 525mil 外形図情報に関するご注意 三洋半導体パッケージは基本的に JEITA の名称付与規定（ED-7303A）に準じています。 ただし、従来のパッケージに用いている名称については、そのまま継続しています。

SOP40

Contextual Info: 40P2M-B EIAJ Package Code SOP40-P-525-1.27 Plastic 40pin 525mil SOP Weight g 1.59 JEDEC Code – Lead Material Alloy 42 e e1 21 Recommended Mount Pad 1 F Symbol L1 E A A1 A2 b c D E e HE L L1 y 20 A2 D e y b A1 L HE 40 I2 A b2 c Detail F b2 e1 I2 Dimension in Millimeters

Contextual Info: 52P2G-A Plastic 52pin 525mil SSOP EIAJ Package Code SSOP52-P-525-0.80 JEDEC Code – Weight g 1.29 Lead Material Alloy 42 e I2 27 E F Recommended Mount Pad Symbol 1 26 A D y b A1 L e A2 L1 HE e1 52 b2 A A1 A2 b c D E e HE L L1 y c Detail F b2 e1 I2 Dimension in Millimeters

SOP32 525mil

Contextual Info: 32P2M-B Plastic 32pin 525mil SOP EIAJ Package Code SOP32-P-525-1.27 Weight g 1.29 JEDEC Code – Lead Material Alloy 42 e I2 A 17 e1 32 b2 1 F Symbol L1 HE E Recommended Mount Pad A A1 A2 b c D E e HE L L1 y 16 y b L e A1 A2 D c Detail F b2 e1 I2 Dimension in Millimeters

SOP032-P-0525

Contextual Info: SMALL OUTLINE L-LEADED PACKAGE 32 PIN PLASTIC FPT-32P-M03 EIAJ code : ∗SOP032-P-0525-1 Lead pitch 50mil Nominal dimensions 525mil Standard Conforms with EIAJ:TYPE V Lead shape Gullwing Sealing method Plastic mold Total width 14.40mm 32-pin plastic SOP FPT-32P-M03

TC5816FT

Abstract: TC5332410F TC5316200CP TC531621 TC5310
Contextual Info: CMOS Flash E2PROM Capacity 1MBit flash X6 Max. Power Dissipation mW Power Supply Max. Accès» Organization Time(ns) V p p (V) Voc(V) Typ» No. Wiita/Erase Standby Read Operating Write/Erase Temperature Method 600mil DIP •TC58F010F-10, 12 525mil SOP •TC58F010FT10, 12

64P2G-A

Contextual Info: 64P2G-A Plastic 64pin 525mil SSOP EIAJ Package Code SSOP64-P-525-0.80 JEDEC Code – Weight g 1.59 Lead Material Alloy 42 e I2 33 E Recommended Mount Pad F Symbol 1 32 A D y b A1 L e A2 L1 HE e1 64 b2 c Detail F A A1 A2 b c D E e HE L L1 y b2 e1 I2 Dimension in Millimeters

Contextual Info: HY62V8100B Series 128Kx8bit CMOS SRAM FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL-part -. 2.0V(min) data retention • Standard pin configuration -. 32 SOP - 525mil -. 32 TSOP-I - 8X20(Standard and Reversed)

A18D0

Abstract: TC534000AP
Contextual Info: Slsllllf I I I ! llllll ¡11 4M BIT 512K W O R D x 8 B IT CMOS MASK ROM DESCRIPTION The TC534000AP/AF is a 4,194,304 bits read only memory organized as 524,288words by 8bits. The TC534000AP / AF is fabricated using Toshiba’s advanced CMOS technology which provides the

TC531024P-12

Contextual Info: TOSHIBA TC531024P-12/15 TC531024F-12/15 SILICON STACKED GATE CMOS 65,536 WORD x 16 BIT CMOS MASK ROM Description The T C 5 3 1 0 2 4 P /F is a 1,048,576 bit read only m em ory organized as 65,536 words by 16 bits. The T C 5 3 1 0 2 4 P /F is fabricated using Toshiba’s advanced C M O S technology w hich results in high speed and low pow er features:

581000P

Abstract: CXK581
Contextual Info: SONY» C X K 5 8 1 0 0 0 P / M -10L/12L/15L -10LL712LL/15LL 131072-word X 8-bit High Speed CMOS Static RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this

HM628512C

Abstract: HM628512CLFP-5SL HM628512CLFP-7 HM628512CLP-5SL HM628512CLP-7 HM628512CLRR-5SL HM628512CLRR-7 HM628512CLTT-5SL HM628512CLTT-7 Hitachi DSA00207
Contextual Info: HM628512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1212C (Z) Rev. 3.0 Aug. 5, 2002 Description The Hitac hi HM628512C is a 4-Mbit static R AM orga nized 512-kw ord × 8-bit. It rea liz es higher density, higher per forma nce and low powe r consumption by employing C MOS proc ess tec hnology (6- tr ansistor

MSM5416263

Abstract: 256x16* STATIC RAM weland SM5416
Contextual Info: OKI Semiconductor MSM5416263 262,144-W ord x 1 6 -Bit M ultiport D RA M DESCRIPTION The MSM5416263 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

48-PIN

Abstract: A12C A15C LH532000B-1
Contextual Info: LH532000B-1 FEATURES CMOS 2M 256K x 8/128K x 16 M a sk-P ro g ra m m a b le ROM PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) 40-PIN DIP 40-PIN SOP TOP VIEW f . 1• 2 a 7[= O E i/Ô Ë ^D C C

3A73

Contextual Info: 1M BIT 65,536 W O R D x 16 BIT C M O S M A S K R O M DESCRIPTION The TC531024P/F is a 1,048,576 bits read only memory organized as 65,536 words by 16 bits. The TC531024P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high speed and low power features with access time of 120ns / 150ns, an operation current of 40mA at

Contextual Info: HY628400 Series •'H Y U N D A I 512Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and

Contextual Info: HM62V8128 Series Preliminary 131,072-word x 8-bit High Speed CMOS Static RAM The Hitachi HM62V8128 is a CMOS static RAM organized 128 kword x 8 bit. It realizes higher density, h ig h er perform ance and low pow er consum ption by em ploying 0.8 |im Hi-CMOS

HY628400LP

Contextual Info: HY628400-I Series 'H Y U N D A I 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit