TC531621 Search Results

TC531621

Contextual Info: TOSHIBA TC5316210CP/CF PRELIMINARY SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS MASK ROM Description TheTC 5316210C P/C F is a 16,777,216 bit read only m em ory organized as 1,048,576 w ords by 16 bits when BYTE is logical

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC531621OBP/BF/BFT 16M BIT 1M W O R D x 16 B IT / 2 M W ORD TENTATIVE x 8 B IT C M O S M A S K R O M DESCRIPTIO N T he T C 5316210B P / B F / BFT is a 16,777,216 bits read only m em ory organized as 1,048,576 words by

TC5316210

Abstract: TC5316210CF
Contextual Info: INTEGRATED TOSHIBA MOS INTEGRATED CIRCUIT CIRCUIT T C 5316210 C P /C F TOSHIBA TECHNICAL DATA SILICON GATE CMOS 16 MBIT 1 M W O RD BY 16 BITS/2 M W O RD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC5316210CP/CF is a 16,777,216-bit Read Only Memory organized as 1,048,576 words by 16 bits

TC5316210

Abstract: Tc5316210cf
Contextual Info: TC5316210CP/CF TOSHIBA TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 1 M WORD BY 16 BITS/2 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC5316210CP/CF is a 16,777,216-bit Read Only Memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and as 2,097,152 words by 8 bits when BYTE is logical low.

MB8316200

Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Contextual Info: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S

TC5816FT

Abstract: TC5332410F TC5316200CP TC531621 TC5310
Contextual Info: CMOS Flash E2PROM Capacity 1MBit flash X6 Max. Power Dissipation mW Power Supply Max. Accès» Organization Time(ns) V p p (V) Voc(V) Typ» No. Wiita/Erase Standby Read Operating Write/Erase Temperature Method 600mil DIP •TC58F010F-10, 12 525mil SOP •TC58F010FT10, 12