TC5310 Search Results

TC531024P-12

Contextual Info: TOSHIBA TC531024P-12/15 TC531024F-12/15 SILICON STACKED GATE CMOS 65,536 WORD x 16 BIT CMOS MASK ROM Description The T C 5 3 1 0 2 4 P /F is a 1,048,576 bit read only m em ory organized as 65,536 words by 16 bits. The T C 5 3 1 0 2 4 P /F is fabricated using Toshiba’s advanced C M O S technology w hich results in high speed and low pow er features:

3A73

Contextual Info: 1M BIT 65,536 W O R D x 16 BIT C M O S M A S K R O M DESCRIPTION The TC531024P/F is a 1,048,576 bits read only memory organized as 65,536 words by 16 bits. The TC531024P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high speed and low power features with access time of 120ns / 150ns, an operation current of 40mA at

50702

Abstract: TC531024P-15 C-15 DIP40 TC531024F-15
Contextual Info: .iiiiiiiiiiiiiMiwniniiiti^iginililBiiiii11 1M BIT 65,536 W ORD x 16 BIT CMOS MASK ROM DESCRIPTION The TC531024P/F is a 1,048,576 bits read only memory organized as 65,536 words by 16 bits. The TC531024P/F is fabricated using Toshiba’s advanced CMOS technology which provides the high

Contextual Info: Bé h H| h M i •MÉrifli IH BIT 128K WORD x 8 BIT CMOS MASK ROM SILICON GATE CMOS DESCRIPTION The TC531001CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program memory of micro­

531024F

Abstract: G392
Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC531024P/F-12, -15 1M BIT 65,536 W O R D x 16 B IT C M O S M A S K RO M D ESCRIPTION T h e T C 5 3 1 0 2 4 P /F is a 1,04 8 ,5 7 6 b its re a d only m em ory organ ized a s 65,536 w ords b y 16 b its. T h e T C 5 3 1 0 2 4 P /F is fa b ric a te d u sin g T o sh ib a ’s ad v an ce d C M O S tech n ology w hich p ro v id es the h igh

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC531001CP/CM2,-15 1M BIT 128K W O R D X 8 BIT C M O S M A S K RO M DESCRIPTION T h e T C 5 3 1 0 0 1 C P /C F is a 1, 048, 576 b its re a d on ly m em ory o rgan ized a s 131, 072 w ords by 8 b its w ith a low b it cost, th u s b e in g su ita b le for u se in p ro g ram m em ory o f m icrop rocessor, an d d a ta

TC531000

Abstract: 531000CP TC531000C
Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC531000CP/CF-12,-15 1M BIT 128K W O R D x 8 BIT C O M S M A S K RO M DESCRIPTIO N T h e T C 5 3 1 0 0 0 C P /C F is a 1, 048, 576 b its re a d only m em ory o rgan ized a s 131, 072 w ords b y 8 b its

TC531000

Abstract: tc531000cp DIP23-P-60
Contextual Info: iÂ^ÉftÂâfÂÂ WWWmmW0Wm 1M EIT 128K WORD x 3 BIT CMOS MASK ROM SILICON GATE CMOS DESCRIPTION The TC531000CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program memory of micro­

203d6

Abstract: 3A11 A12C TC531001CF TC531001CP
Contextual Info: IH BIT 128K WORD x 8 BIT CMOS Í1ASK ROM SILICON GATE CMOS DESCRIPTION The TC531001CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program memory of micro­ processor, and data memory, especially character generator. The TC531001CP/CF using

Contextual Info: TOSHIBA TC531000CP-12/15 TC531000CF-12/15 SILICON STACKED GATE CMOS 131,072 WORD x 8 BIT CMOS M ASK ROM Description The T C 5 3 1 0 0 0 C P / C F is a 1,048,576 bit read only m emory organized a s 131,072 w ords by 8 bits. A low bit cost m akes it suitable

ci 4070

Abstract: Otis technology
Contextual Info: m m m m mmsrnmimsm . 8ÄSI .„¡m R l P  IBi? f f ! ïi ll ll ll ll lÄiliiÄiÄÄliiftÄ m ß WÊS ijj|j| ISS«!11 g ¡Ssii itiWiii j&$RÌl$ÌÌÉ IM EIT (128K WORD x 3 BIT CMOS MA SK ROM S I LICON GATE CMOS DESCRIPTION The TC531000CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8

TC531000cp

Abstract: TC531000CF a2c8 DOC11
Contextual Info: 1M EIT 128K WORD x 8 BIT CMOS MASK ROM SILICON GATE CMOS DESCRIPTION The TC531000CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program memory of micro­ processor, especially character generator.

TC531001CP

Contextual Info: TOSHIBA TC531001CP-12/15 TC531001CF-12/15 SILICON STACKED GATE CMOS 131,072 WORD x 8 BIT CMOS MASK ROM D escription The TC531001CP/CF is a 1,048,576 bit read only memory organized as 131,072 words by 8 bits. A low bit cost makes It suitable for use as program memory for microprocessors or for fixed data storage such as a character generator. The TC531001 CP/CF

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

2SKI34

Abstract: TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576
Contextual Info: [CATALOG 5VSTEMCATALOG SV5TEMCATALOG 5V5TEM CATALOG 5VSTEM C K T Q S rG A m .ro H IB f lp T E M CATALOG SV5TEM CATALOG 5VSTEM CATALOG S t 5 v llfflC A T A L O G SVSTEMCATALOG SVSTEMCATALOG SVSTEM CA SVSTEM CATALOG SVSTEM CATALOG 5V 5TE M CATALOG SVSTEM CATALOG S t

TC571000D-15

Abstract: TC5710000-15 TC571001D-15 571000D TC531000P TC5710010-15 TC571000D tc571001d h102 d1 tc5710000
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS T C 5 710 0 0 D -15 , -20, -200, -25 T C 5 71 0 0 1D -15 , -20, -200, -25 IDESCRIPTIONI The TC571000D/TC571001D is a 131,072 word * 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. The TC571000D is JEDEC standard pin configuration and the TC571001D is compatible with

af15 cc hen vd

Abstract: TC531000 571001
Contextual Info: TOSHIBA TC541000AP/AF-12, -15 TC541001AP/AF-12, -15 SILICON STACKED GATE CMOS 131,072 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY Description The T C 5 4 1 0 0 0 A P /A F an d th e T C 5 4 1 0 0 1 A P /A F are 1 3 1 ,0 7 2 w o rd x 8 b it C M O S on e tim e p ro g ra m m a b le read only m em ories

MB834000

Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
Contextual Info: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

CX20106A

Abstract: GL7805 GL386 GL1150 GL7809 GL317 GLC556 LA7830 GL1151 GL3401
Contextual Info: TABELA DE EQUIVALÊNCIAS SEMICONDUTORES GOLDSTAR formerly hosted by http://www.robvendas.hpg.ig.com.br/APOST/GOLD.HTM 1 of 6 G53 GAS105 LAG553-2 2SB463 - - 2SB474 GD75188 GD75189 DS1488 DS1489 SN75188 SN75189 GE4 GE1012 48-124376 MOC3012 - - GE3009 GE3010

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257