AM27C010 Search Results

Contextual Info: ADV MICRO MEMORY MAE D • 0257550 00303^0 S ■AN»4 T -4 6 -1 3-29 Am27C010 Advanced Micro Devices 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Easy upgrade from 28-Pin JEDEC EPROMs ■ Fast access time—100 ns ■ Low power consumption:

Contextual Info: AMD£I FINAL Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity — 45 ns m axim um access tim e ■ Low power consumption ■ Versatile features for simple interfacing

27C010-10

Contextual Info: FINAL a Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS Latch-up protected to 100 mA from -1 V to • Fast access time Vcc +1 V — 90 ns High noise immunity ■ Low power consumption — 20 nA typical CMOS standby current

Contextual Info: FINAL A M D il Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — Speed options as fast as 45 ns — Typical programming time of 16 seconds ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to

MB834000

Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
Contextual Info: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010

AM27C010

Abstract: 10205F-4 a6628 cdv0 Product Selector Guide
Contextual Info: AMENDMENT Am27C010 Data Sheet 1995/96 EPROM Products Data Book/Handbook INTRODUCTION This amendment supersedes information regarding the Am27C010 device in the 1995/96 EPROM Products Data Book/Handbook, PID 17061B. This document includes replacement pages for the Am27C010 data

AM27CO10

Abstract: AM27C010-120DC AM27C010 gg2mt
Contextual Info: ADV MICRO MEMORY 14E 0 1 Q5S?5Eâ 0Ü27M07 t | Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMO,S EPROM DISTINCTIVE CHARACTERISTICS Compact 32-pin DIP package requires no hardware change for upgrades to 8 megabits Easy upgrade from 28-pin JEDEC EPROMs

AM27C010

Abstract: 032-32-Pin AM27C010 Revision A
Contextual Info: FINAL A M D ii Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — Speed options as fast as 45 ns ■ — Typical program m ing tim e of 16 seconds Low power consumption ■ Latch-up protected to 100 mA from -1 V to

M27C010

Abstract: AM27G Am27G010 AMD am2 socket pinout AMD socket AM2 pinout AMD am2 socket pinout VOLTAGE 27C010X socket AM2 pinout
Contextual Info: a Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

AM27CO10

Abstract: AM27C010
Contextual Info: Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • — 90 ns Latch-up protected to 100 mA from -1 V to Vcc + 1 V Low pow er consum ption High noise im m unity Fast access tim e ■ ■ — 20 (iA typical CMOS standby current

Contextual Info: FINAL AMDZ1 Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity — Speed options as fast as 45 ns ■ Low power consumption ■ Versatile features for simple interfacing

Contextual Info: FINAL AMDZ1 Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity — Speed options as fast as 45 ns ■ Low power consumption ■ Versatile features for simple interfacing

Contextual Info: F IN A L A M D il Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc + 1 V ■ Fast access time — Speed options as fast as 45 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

617-2240

Abstract: 273505 OJ-11
Contextual Info: Advanced Micro Devices Am27 HB010 1 Megabit 131,072 x 8-Bit Burst Mode CMOS EPROM DISTINCTIVE CHARACTERISTICS • Highspeed - 50 ns random access - 15 ns burst access ■ No burst boundary ■ No burst limit ■ Pin compatible with Am27C010 Supports all “Burst" microprocessors

AM27C010-150DC

Abstract: AM27C010 AM27C010 Revision A Product Selector Guide
Contextual Info: FINAL Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from –1 V to VCC + 1 V — 45 ns maximum access time ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

Contextual Info: ADV MI CRO G5S7S5Ö taME D MEMORY DDansa DEO • AMDM ZT Advanced Micro Devices Am27C010 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Latch-up protected to 100 mA from -1 V to Vcc + 1 V ■ Fast access time — 90 ns ■ High noise immunity

AM27C010

Contextual Info: FINAL Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — Speed options as fast as 45 ns ■ Low power consumption — 20 µA typical CMOS standby current ■ JEDEC-approved pinout

atmel 24c16a

Abstract: ST93C86 EPROM AMD D87C257 atmel 93c66A ATMEL 24c64 39SF512 D27128 NEC P87LPC7648 GAL16AS
Contextual Info: GALEP-III Device List 2000-01-31 valid for version 1.17 page 1 of 1 D:\btl117.doc EPROM AMD AM27C010 AM27C020 AM27C040 AM27C080 AM27C1024 AM27C128 AM27C2048 AM27C256 AM27C4096 AM27C512 AM27C64 ATMEL AT27C/LV/BV010 AT27C/LV/BV020 AT27C/LV/BV040 AT27C/LV/BV256

AM27C010

Abstract: AM27C010 Revision A Product Selector Guide
Contextual Info: F IN A L AM D il Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to VCC+1 V ■ High noise immunity — 45 ns maximum access time ■ Low power consumption — 20 nA typical CMOS standby current

TMS27256

Abstract: M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32
Contextual Info: Device List by Manufacturer . 2716 2716BDC 2732 2732A 2764 Am27C64 Am2864AE Am2864BE 27128 Am27C128 27256 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 Am27H010 Am27LV010 Am27LV010B Am27C020 Am27LV020 Am27LV020B Am27C040 Am27C080 AT28C04 AT28C16 AT28C17 AT28HC16 AT28HC16L AT27HC64

AM27C010

Contextual Info: FINAL Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from –1 V to VCC + 1 V — Speed options as fast as 45 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

AM27C010

Abstract: 10205F-4 AM27C010-90
Contextual Info: FINAL Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from –1 V to VCC + 1 V — 55 ns ■ High noise immunity ■ Low power consumption — 20 µA typical CMOS standby current

AM27C010

Contextual Info: FINAL Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from –1 V to VCC + 1 V — 45 ns maximum access time ■ High noise immunity ■ Versatile features for simple interfacing

Am27CQ10

Contextual Info: Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Easy upgrade from 28-Pln JEDEC EPROMs ■ Fast access time— 100 ns ■ Low power consumption: - 1 0 0 nA maximum standby current ■ Programming voltage: 12.75 V