AM27C010 Search Results

Contextual Info: ADV MICRO MEMORY MAE D • 0257550 00303^0 S ■AN»4 T -4 6 -1 3-29 Am27C010 Advanced Micro Devices 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Easy upgrade from 28-Pin JEDEC EPROMs ■ Fast access time—100 ns ■ Low power consumption:

Contextual Info: AMD£I FINAL Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity — 45 ns m axim um access tim e ■ Low power consumption ■ Versatile features for simple interfacing

27C010-10

Contextual Info: FINAL a Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS Latch-up protected to 100 mA from -1 V to • Fast access time Vcc +1 V — 90 ns High noise immunity ■ Low power consumption — 20 nA typical CMOS standby current

Contextual Info: FINAL A M D il Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — Speed options as fast as 45 ns — Typical programming time of 16 seconds ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to

MB834000

Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
Contextual Info: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010

AM27C010

Abstract: 10205F-4 a6628 cdv0 Product Selector Guide
Contextual Info: AMENDMENT Am27C010 Data Sheet 1995/96 EPROM Products Data Book/Handbook INTRODUCTION This amendment supersedes information regarding the Am27C010 device in the 1995/96 EPROM Products Data Book/Handbook, PID 17061B. This document includes replacement pages for the Am27C010 data

AM27CO10

Abstract: AM27C010-120DC AM27C010 gg2mt
Contextual Info: ADV MICRO MEMORY 14E 0 1 Q5S?5Eâ 0Ü27M07 t | Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMO,S EPROM DISTINCTIVE CHARACTERISTICS Compact 32-pin DIP package requires no hardware change for upgrades to 8 megabits Easy upgrade from 28-pin JEDEC EPROMs

AM27C010

Abstract: 032-32-Pin AM27C010 Revision A
Contextual Info: FINAL A M D ii Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — Speed options as fast as 45 ns ■ — Typical program m ing tim e of 16 seconds Low power consumption ■ Latch-up protected to 100 mA from -1 V to

M27C010

Abstract: AM27G Am27G010 AMD am2 socket pinout AMD socket AM2 pinout AMD am2 socket pinout VOLTAGE 27C010X socket AM2 pinout
Contextual Info: a Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

AM27CO10

Abstract: AM27C010
Contextual Info: Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • — 90 ns Latch-up protected to 100 mA from -1 V to Vcc + 1 V Low pow er consum ption High noise im m unity Fast access tim e ■ ■ — 20 (iA typical CMOS standby current

Contextual Info: FINAL AMDZ1 Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity — Speed options as fast as 45 ns ■ Low power consumption ■ Versatile features for simple interfacing

Contextual Info: FINAL AMDZ1 Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity — Speed options as fast as 45 ns ■ Low power consumption ■ Versatile features for simple interfacing

Contextual Info: F IN A L A M D il Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc + 1 V ■ Fast access time — Speed options as fast as 45 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

Contextual Info: ADV MI CRO G5S7S5Ö taME D MEMORY DDansa DEO • AMDM ZT Advanced Micro Devices Am27C010 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Latch-up protected to 100 mA from -1 V to Vcc + 1 V ■ Fast access time — 90 ns ■ High noise immunity

atmel 24c16a

Abstract: ST93C86 EPROM AMD D87C257 atmel 93c66A ATMEL 24c64 39SF512 D27128 NEC P87LPC7648 GAL16AS
Contextual Info: GALEP-III Device List 2000-01-31 valid for version 1.17 page 1 of 1 D:\btl117.doc EPROM AMD AM27C010 AM27C020 AM27C040 AM27C080 AM27C1024 AM27C128 AM27C2048 AM27C256 AM27C4096 AM27C512 AM27C64 ATMEL AT27C/LV/BV010 AT27C/LV/BV020 AT27C/LV/BV040 AT27C/LV/BV256

AM27C010

Abstract: AM27C010 Revision A Product Selector Guide
Contextual Info: F IN A L AM D il Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to VCC+1 V ■ High noise immunity — 45 ns maximum access time ■ Low power consumption — 20 nA typical CMOS standby current

Contextual Info: FINAL AMDZ1 Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — Speed options as fast as 45 ns — Typical program m ing tim e of 16 seconds ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to

Contextual Info: Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

AM27C010

Contextual Info: FINAL Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — Speed options as fast as 45 ns — Typical programming time of 16 seconds ■ Low power consumption ■ Latch-up protected to 100 mA from –1 V to

am27c010

Contextual Info: Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc + 1 V ■ Fast access time — 90 ns ■ Low power consumption ■ High noise immunity ■ Versatile features for simple interfacing

M27C010

Abstract: AM27C010
Contextual Info: F IN A L AMDZ1 Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ High noise immunity — Speed options as fast as 45 ns ■ Low power consumption ■ Versatile features for simple interfacing

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

ST m27c512

Abstract: TSOP44 Package SO32 m27c1001 plcc32 ST M27C256B Atmel 642 M27C4002 m27c4001 CROSS REFERENCE PLCC32 package EPROM m27c2001
Contextual Info: OTP and UV EPROM Products www.st.com/eprom Cross Reference Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Introduction Long-term commitment STMicroelectronics will support the EPROM market in the long term with a strong commitment, guaranteeing manufacturing capability and high quality service. Continuous

AH27C010-170

Abstract: AT27LV010-30 27C010-150V10 27C010-155 27010 eprom 27010-200V05 27010-250V05 27010-250V10 27010-300V10 27C010-120V10
Contextual Info: — 132 — 2 7 C O 1 O X 4 y m £ tt £ OC f* y * ftft m TAAC max ns) TCAC tax (ns) TOH max (ns) TOE max (ns) TOD VDD (ns) <V) A M I DD/STANDBY VIL W (mA) as tí VIH min (V) Ci max (pF) -h /m % V O L / 1 VOL max (V/iuA) « æ V O H / I VOH (V/mA) Co max