character generater
Contextual Info: 4M BIT 256K W O RD x 16 B IT / 512K W O R D x 8BIT CM OS M ASK ROM DESCRIPTION The BYTE The The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.
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tc534200p/f600mil40pin525mil+5150ns20/uatc534200ptc534200p/f--character generater
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TC534200P
Contextual Info: • IIS 4M BIT 256K W O RD x 16 B IT /5 1 2 K W O R D x 8B IT CM OS M ASK ROM DESCRIPTION The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when BVt E is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.
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bit/512ktc534200p/f600mil40pin+4525mil150nstc534200pdip40-p-
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MB8316200
Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Contextual Info: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S
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23c4000c23c4100c23c4200c23v4000c+12km23v41km23v41oocetupd23c4001ebupd23c4000shn62344bhn62444mb8316200tc533200upd23c400023c32000a624116hn62318/338b
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TC534200P
Contextual Info: TC534200P/F 4 M BIT 256K W O R D x 16 BIT/512K W O R D x 8BIT C M O S M A S K RO M PRELIMINARY DESCRIPTION The TC534200P/F is a 4,194,304 bits read only memory organized as 262,144 words by 16 bits when BYTE is logical high, and is organized as 524,288 words by 8 bits when BYTE is logical low.
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tc534200p/fbit/512k600mil40pin+3525mil150nstc534200p
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TC534200CF
Contextual Info: TOSHIBA TC534200CP/CF P R E LIM IN A R Y SILICON STACKED GATE CMOS 262,144 WORD x 16 BIT/524,288 WORD x 8 BIT CMOS MASK ROM Description The TC534200CP/CF is a 4,194,304 bit read only memory organized as 262,144 w ords by 16 bits when BY 11 is logical high,
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tc534200cp/cfbit/524tc534200c534200cp/cf+5600mil40-pin525miltc534200cptc534200cf
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534200P
Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC534200P/F-4M BIT 256K W O R D x 16 BIT /51 2K W O R D x 8 B IT C M O S M A S K RO M DESCRIPTIO N T h e T C 5 3 4 2 0 0 P /F is a 4 ,1 9 4 ,3 0 4 b its re a d only m em ory o rgan ize d a s 2 6 2 ,1 4 4 w ords b y 16 b its w hen
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tc534200p/f---------------------------4mtc534200p/f534200p |
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TC534200F
Abstract: UTC A11 TC534200P
Contextual Info: TOSHIBA TC534200P/F SILICON STACKED GATE CMOS 262,144 WORD x 16 BIT/524,288 WORD x 8 BIT CMOS MASK ROM Description The TC534200P/F is a 4,194,304 bit read only memory organized as 262,144 words by 16 bits when BYTE is logical high and organized as 524,288 words by 8 bits when BY I t is logical low.
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tc534200p/fbit/524600mil40-pin+4525miltc534200ptc534200futc a11
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TC534200CF
Contextual Info: TOSHIBA TC534200CP/CF/CFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 4 MBIT 256 K WORD BY 16 BITS/512 K WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC534200CP/CF is a 4,194,304-bit Read Only Memory organized as 262,144 words by 16 bits when BYTE is logical high, and as 524,288 words by 8 bits when BYTE is logical low.
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tc534200cp/cf/cftbits/512tc534200cp/tc534200cf304-bit+4tc534200cp/cf40-pin44-pintc534200cf
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SOP40 eprom
Abstract: TC534200P tc534200
Contextual Info: *1* »i f i ti v n t B H H H ti P r ^ 4 M E G A BIT 262,144 W O R D x 16 B IT / 524,288 W O R D x SBtT C M O S O N E TIM E P R O G R A M M A B LE R EA D O N LY M E M O R Y DESCRIPTION The TC 544200P/F is a 4,194,304 bit CMOS One tim e program m able read only memory,
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16bit/tc544200p/f120ns/150ns/200ns60ma/8+6tc574200d0dip40-p-60022typsop40 epromtc534200ptc534200
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uPD23C4000
Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A
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64kx4km424c64mt42c4064upd41264+16upd42264hm53461tms446164kx8256kx4km428c64upd23c400093c46 atmelsony cross referenceatmel 93c66hn62404p93c46lrom at29c010hitachi sram cross referencex2864aupd23c2000
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HA1334
Abstract: TC534200P
Contextual Info: TOSHIBA TC544200P/F-120, -150 SILICON STACKED GATE CMOS 262,144 WORD x 16 BIT/524,288 WORD x 8 BIT CMOS ONE TIME PROGRAMMABLE READ ONLY MEMORY Description T heT C 544200P /F is a 4,194,304 word x 16 bit CMOS one time programmable read only memory. It is organized as either
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tc544200p/f-120bit/524544200p544200p/f+740-pintc544200p/f120ns/150ns60ma/8tc574200dha1334tc534200p
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TC574200D-150
Abstract: C1906
Contextual Info: 4MEGA BIT 262,144 WORD X 16BIT/ 524,288 WORD x 8BIT CMOS U.V. ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY PRELIMINARY DESCRIPTION The TC574200D is a 4,194,304 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is organized as 256K words of 16 bit or 512K words of 8 b it
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16bit/tc574200d120ns/150ns+4200nstc574200d-120tc574200d-150c1906
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MB834000
Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
Contextual Info: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010
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mx27c256i27c256am27c256nm27c256+14m27c256mx27c512i27c512am27c512nm27c512m27c512mb834000m5m23160mb834100mb838000mb832000sgs m27c256km23c1010m27c256 intel
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41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
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41c25641c25741c25841c464+1441c46641c100044c25644c25844c1002tc51257fujitsu 814100tc 55464 toshibahn62304hn623257658128816bhn62324m7202a
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015z10015z11015z12015z2+11015z3ta8172aftb 1226 bnta8859pmg75n2ys40t6961ata8242akta8644n7378pta83107628p
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574200D
Abstract: TC574200D-10
Contextual Info: TOSHIBA TC574200D-10, -120, -150 SILICON STACKED GATE CMOS 262,144 WORD x 16 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY Description The TC574200D is a 262,144 word x 16 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It
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tc574200d-10tc574200d574200d40-pin+2100ns/120ns/150ns70ma/10mhz
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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41c25641c25741c25841c464+1441c46641c100041c100244c25644c25841c4000tc55b8128424170 neccy7019944c1000iot7164hn62308bphn62404ptc5116100
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K93C46
Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257
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416c25614800a14900a514170b+16514280bkm23c16000gkm23c16100gkm23c16000fpkm23c16100fphn624017fbk93c4693cs46nmb832001hn6230841c100093c46ln41464hn623257hm63832dt71256
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TC55B8128
Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6
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tc511001tc514101514170b514280b+16tc5316200pkm2x16100km23c16000gkm23c16100gkm23c16000fpkm23c16100fptc55b8128km23c4000agtc534000afhn62308bptc551632hitachi crossmb8368512uhitachi 64k dramtc55b4256
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TC55B4257
Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264
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OCR Scan
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km424c64mt42c4064upd41264upd42264+16hm53461tms4461km428c64km424c256km424c256atc524256tc55b425793c46lupd23c4000atmel 93c66km628512hitachi sram cross referenceatmel 93c57tc55b465upd23c800093c56v
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intel 82c51
Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Contextual Info: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160
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OCR Scan
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51v1610051v1616051v1640051v17100+1551v1740051v18160tc5116160atc5116800atc5117800aupd4216100intel 82c51mitsubishi 82c54intel p8085apd8155hnec 8212c82c55harris 82c5582c59 toshibam5l8288
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tc534200
Abstract: TC534200P TC574200D-150 TC574200D-120 TC574200D-10
Contextual Info: I l Ÿi\ 4M EGA BIT 262,144 W O RD X 16 B IT /524,288 WORD X 8BIT CMOS U.V. ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY DESCRIPTION The TC574200D is a 4,194,304 bit CMOS u ltra v io le t lig h t erasable program m able read only memory. The TC574200D is compatible w ith 40 pin 4M b it M ask ROM,
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16bit/524tc574200dtcs74200d100ns+8120ns150ns10mhztc534200tc534200ptc574200d-150tc574200d-120tc574200d-10
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GI9332
Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
Contextual Info: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8
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mb83256mb83512mb831000mb832000+13mb834100mb834000mb83420027c1024h27c101a27c301agi933223c200123c100123c1000upd23c100123c4001hn62304
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TC574200D-10
Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC574200D-10,-120,-150 4 M E G A B IT 262,144 W O R D X 16 B IT / 524,288 W O R D x 8 BIT C M O S U.V . E R A S A B L E A N D E L E C T R IC A L L Y P R O G R A M M A B L E R E A D O N L Y M E M O R Y DESCRIPTIO N
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tc574200d-10tc574200d150ns |
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