KM23V16205 Search Results

Contextual Info: KM23V16205DSG CMOS MASK ROM 16M-Bit 1Mx16 /512Kx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 16(word mode) 524,288 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 4 double Words / 8 Words page access

Contextual Info: Advance Information KM23V16205BSG CMOS MASK ROM 16M-Bit 1 Mx16 /512Kx32 CMOS MASK ROM GENERAL DESCRIPTION FEATURES S w itch a b le organ izatio n 1,408,576 x 16(w ord m ode) 524,288 x 32 (d o u b le w o rd m ode) Fast acce ss tim e Random A ccess : 100ns(m ax.)

Contextual Info: Preliminary CMOS MASK ROM KM23V16205DSG 16M-B»t 1Mx16 /512KX32 CMOS MASK ROM FEATURES G E N E R A L D E S C R IP T IO N • Switchable organization 1,048,576 x 16(word mode) 524,288 x 32(double word mode) • Fast access time Random Access : 100ns(Max.)

KM23V16205

Contextual Info: Preliminary CMOS MASK ROM KM23V16205DSG 16M-Bit 1Mx16 /512Kx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 16(word mode) 524,288 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.)

KM23V16205DSG-10

Abstract: KM23V16205DSG-12
Contextual Info: KM23V16205DSG CMOS MASK ROM 16M-Bit 1Mx16 /512Kx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 16(word mode) 524,288 x 32(double word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) 4 double Words / 8 Words page access

Contextual Info: Advance Information KM23V16205BSG CMOS MASK ROM 16M-Bit 1Mx16 /512Kx32 CMOS MASK ROM GENERAL DESCRIPTION FEATURES Switchable organization 1,408,576 x 16(word mode) 524,288 x 32(double word mode) Fast access time Random Access : 100ns(max.) Page Access : 30ns(max.)

KM23C16005AG

Abstract: 44TSOP2 44-TSOP2
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density Power Supply 4M bit 5V±10% Part Number KM23C4000C G KM23C4100C(G/T) 8M bit 5V±10% 5V±10% 3.3V-0.3V 5Vt1C% 3 2M bit 3.3V+0.3V , 100 . Extended 512Kx8/256Kx16 100 - 150 KM23V41OOCET 512Kx 8 512Kx8/256Kx16

MB834000

Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
Contextual Info: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010

Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16

48TSOP1

Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
Contextual Info: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15