TC528126BJ-10
Contextual Info: TC528126BJ-10 1/3 IL00 * C-MOS 1M (131,072 X 8)-BIT MULTI PORT DYNAMIC RAM -TOP VIEW25 SC SIO1 IN 1 I/O 2 GND 40 24 39 SIO8 23 I/O 22 SIO2 SIO3 I/O I/O 3 38 SIO7 4 I/O 19 37 SIO6 I/O 18 17 SIO4 I/O 5 36 SIO5 DT/OE IN 6 35 SE W1/IO1 I/O 7 34 W8/IO8
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tc528126
Abstract: TC528126B
Contextual Info: PRELIMINARY 131, 0 7 2 W O R D S x 3 B IT S M U L T IP O R T D R A M D E S C R IP T IO N The TC52812GBJ/BZ is a CMOS multiport memory equipped with a 131,072-words by 8-bits dynamic random access memory RAM port and a 256-words by 8-bits static serial access memory (SAM) port. The
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tc52812gbj/bz072-words256-wordstc528126bj/bz+3tc52812gbtc528126tc528126b
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uPD23C4000
Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A
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64kx4km424c64mt42c4064upd41264+16upd42264hm53461tms446164kx8256kx4km428c64upd23c400093c46 atmelsony cross referenceatmel 93c66hn62404p93c46lrom at29c010hitachi sram cross referencex2864aupd23c2000
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TC524258BJ
Abstract: TC528128BJ-80 TC524258B TC524300SF TC524256BFT-80 TC524300 TC528257 tc528128 tc524258 TC524256
Contextual Info: Video Memory Capacity Type No. X6 RAM Pot Access Time Organizaron tRAC S A M Port Access Time ns tCAC Cycle Time Access Time CvdeTime Max. Power Dissipation (mW) Active Stand-by 80 25 150 25 30 687.5 55 TC524256BJ/BZ-10 100 25 180 25 30 605 55 TC524258BJ/BZ-80
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tc524256bj/bz-80tc524256bj/bz-10tc524258bj/bz-80tc524258bj/bz-10+15tc524256bft-80tc524256bft-10tc524258bft-80tc524258bft-10tc528126bj-80tc528126bj-10tc524258bjtc528128bj-80tc524258btc524300sftc524300tc528257tc528128tc524258tc524256
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TC55B4257
Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264
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km424c64mt42c4064upd41264upd42264+16hm53461tms4461km428c64km424c256km424c256atc524256tc55b425793c46lupd23c4000atmel 93c66km628512hitachi sram cross referenceatmel 93c57tc55b465upd23c800093c56v
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TC528126BZ
Abstract: TC528126 TC528126B
Contextual Info: 131, 0 7 2 W O R D S x íiB IT S M U L T IP O R T PRELIMINARY DRAM D E S C R IP T IO N The TC528120BJ/BZ is a CMOS m ultiport m em ory equipped w ith a 131,072-words by 8-bits dynam ic random a c c e s s m em ory RAM p ort and a 256-w ords by 8-bits static serial a c c e s s m em ory (SAM) port. The
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tc528120bj/bz072-words256-w28126bj/bz+4tc528126bj/bztc528126bztc528126tc528126b
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al 232 nec
Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258
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km41c256km41c257km41c258km41c464+16km41c466km41c1000km41c1001km41c1002km44c256km44c258al 232 nectc55b4257mb832001nm9306eeprom cross referenced41264tc5116100hn28c256nm9307oki cross reference
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