23C2001
Contextual Info: /PD23C2001 262,144 x 8-BIT MA S K - p R ° G r a m m a b l e CMOS ROM iLflU'S* H Eli W NEC Electronics Inc. Descriiption Pin Configuration The//PD23C2001 is a 262,144-word by 8-bit static ROM fabricated with C M O S silicon-gate technology. Designed to operate from a single +5-volt power
|
OCR Scan
|
upd23c2001144-wordipd23c200132-pin+323c200132-pln3-004590a
|
PDF
|
NEC 1132
Contextual Info: iL fT JS * N IL W #PD23C2001 262,144 X 8-Bit Mask-Programmable CMOS ROM NEC Electronics Inc. Description Pin Configuration The PD23C2001 is a 262,144-word by 8-bit static ROM fabricated with CMOS sillcon-gate technology and designed to operate from a single + 5-volt power supply.
|
OCR Scan
|
upd23c2001ppd23c2001144-word32-pin+332-plnjhpd23c2001nec 1132
|
PDF
|
uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
|
Original
|
pd7500x10679ejav0sg00mf-11341995p+10upc2581upc20022sd1557upa67cupb582upc1237upc3172p4m pin diagram2sc4328upc157
|
PDF
|
41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
|
OCR Scan
|
41c25641c25741c25841c464+1441c46641c100041c100244c25644c25841c4000tc55b8128424170 neccy7019944c1000iot7164hn62308bphn62404ptc5116100
|
PDF
|
TC55B8128
Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6
|
OCR Scan
|
tc511001tc514101514170b514280b+16tc5316200pkm2x16100km23c16000gkm23c16100gkm23c16000fpkm23c16100fptc55b8128km23c4000agtc534000afhn62308bptc551632hitachi crossmb8368512uhitachi 64k dramtc55b4256
|
PDF
|
al 232 nec
Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258
|
OCR Scan
|
km41c256km41c257km41c258km41c464+16km41c466km41c1000km41c1001km41c1002km44c256km44c258al 232 nectc55b4257mb832001nm9306eeprom cross referenced41264tc5116100hn28c256nm9307oki cross reference
|
PDF
|
D7528AC
Abstract: uPD27C2000 23C4000 pd77p20 D27c512 PD75402 d27c1001 pd75216 D75328 JPD7527A
Contextual Info: NEC NEC E lectronics Inc. ROM Code Submission Guide Application Note 90-05 Introduction Minimum Requirements This a p p lic a tio n n o te p ro vid e s g u id e lin e s fo r su b m it tin g th e d a ta file s used by NEC to p ro g ra m se m icu s to m iz e d in te g ra te d c irc u its a c o m p le te lis t of w h ich
|
OCR Scan
|
30000-j6ffff-16d7528acupd27c2000+823c4000pd77p20d27c512pd75402d27c1001pd75216d75328jpd7527a
|
PDF
|