41C4000 Search Results

Contextual Info: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7^4142 DD131S7 524 B S H 6 K 41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 41C4000AL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.

Contextual Info: 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung KM 41C4000ASL is a high speed CMOS 4,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

MT28F400B3WG-8 tcp 41c

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0013140 220 »SnfiK KM 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4000A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.

KM41C4000AJ

Abstract: KM44C1000AZ "30 pin simm" KM41C4000Z KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble
Contextual Info: FUNCTION GUIDE 2. Product Guide 2.1 Dynamic RAM Generation 1st Gen. 2nd Gen. 3rd Gen. Part Number Organization Speed ns Technology Feature Package Remark 41C4000J 41C4000Z KM 41C4000U 41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 4M x1 4M x1

Contextual Info: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

594000A

Contextual Info: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 594000A consist of nine KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

Contextual Info: 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung KM 41C4000ASL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: CMOS DRAM 41C4000AL 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess M em ory. Its design is optimized for high perform ance applications

Contextual Info: CMOS DRAM 41C4000C/CL/CSL 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C 41C4000C/CL/CSL-5 50ns 13ns 90ns 41C4000C/CL/CSL-6 60ns 15ns 110ns 41C4000C/CL/CSL-7 70ns 20ns 130ns 41C4000C/CL7CSL-8

km41c4000

Contextual Info: 41C4000/L CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1C 4 0 0 0 /L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: DRAM MODULE 4 Mega Byte KMM5941OOAKN Fast Page Mode Preliminary 4M x9 DRAM SIM M , 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION T h e S a m s u n g K M M 5 94 1 OOAKN is a 4 M bit x 9 FEATURES • P e rfo rm an ce R ange: D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . T h e

Contextual Info: 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1C 4 0 0 0 A S L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A cce ss Mem ory. Its design is optimized for high perform ance applications

41C4000CJ

Contextual Info: DRAM MODULE KMM594100AKN Fast Page Mode 4 Mega Byte Preliminary \ 4Mx9 DRAM SIMM , 2K Refresh , 5 V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM594100AKN is a 4M bit x 9 Dynamic RAM high density memory module. The Samsung KMM594100AKN consists of two CMOS

Contextual Info: CMOS DRAM 41C4000AL 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess M em ory Its design is optimized for high perform ance applications

Contextual Info: 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 1 C 4 0 0 0 A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A cce ss M em ory. Its design is optimized for high perform ance applications

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — 41C4000C-7 — 41C4000C-8 41C4000C-5

Contextual Info: DRAM MODULE 32 Mega Byte KMM5368100A1/A1G Fast Page Mode 8Mx36 DRAM SIMM Module, 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM536B100A1 is a 8M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5368100A1 consists of sixteen CMOS

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364100A/AG Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN ERA L D ESC RIPTIO N FEATURES • Performance Range' The Sam sung K M M 5364100A is a 4M bit x 36 D ynam ic RAM high density m em ory module. The

NG9-2

Contextual Info: 41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4000A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

C1000D

Contextual Info: KM4 1 C 4 0 0 0 D T CMOS DR A M ELECTRONICS 4M X 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access

Contextual Info: SAMSUNG ELE CTRONICS INC b4E J> • 7 ^ 4 1 4 2 Q013174 b03 ■ 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A S L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A ccess M em ory.

Contextual Info: 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 1 C 4 0 0 0 A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A ccess M em ory. Its design is optimized for high perform ance applications

Contextual Info: DRAM MODULES KMM594000A 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Perform ance range: tR A C tC A C tR C 70ns 20ns 130ns KM M 594000A- 8 80ns 20ns 150ns K M M 594000A -10 100ns 25ns 180ns KM M 594000A- 7 • • • • • • •