8MX36 Search Results

HMD8M36M6

Abstract: HMD8M36M6G
Contextual Info: HANBit HMD8M36M6G 32Mbyte 8Mx36 72-pin SIMM FP with Parity Mode, 4K Ref. 5V Part No. HMD8M36M6, HMD8M36M6G GENERAL DESCRIPTION The HMD8M36M6 is a 8M x 36bit dynamic RAM high density memory module. The module consists of four CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages and two CMOS 4M x 4bit Quad CAS DRAM in 28pin SOJ package mounted on a

Contextual Info: DRAM MODULE KMM5368005CSW/CSWG 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5368005CSW/CSWG DRAM MODULE

Contextual Info: DRAM MODULE M53640805CY0/CT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640805CY0/CT0-C DRAM MODULE

HY5117404B

Contextual Info: HYM536A814B M-Series 8Mx36 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536A814B M-Series is a 4Mx36-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E D • T T b H l H S 0 0 1 5 3 1 0 13T I SPIGK KMM5368000H/HG DRAM MODULES 8Mx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5368000H is a 8 M bits x 36 Dynam­ ic RAM high density memory module. The Samsung

k3525

Abstract: km41c4100
Contextual Info: DRAM MODULE 32 Mega Byte KMM5368100AK/AKG Fast Page Mode 8Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5368100AK is a 8M bit x 36 Dynamic RAM high density memory module. The • Performance Range:

KM44C4100AK

Contextual Info: DRAM MODULE 32 Mega Byte KMM5368100AKH Fast Page Mode P rG lim in S T V 8Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package ^ GENERAL DESCRIPTION FEATURES The Samsung KMM5368100AKH is a 8M bit x 36 Dynamic RAM high density memory module. The

Contextual Info: DRAM MODULE KMM5368005BSW/BSWG 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM5368005BSW/BSWG Revision History Ver si on 0.0 (Sept, 1 99 7) • R em oved tw o A C p aram eters t cacp (access tim e from C A S ) and tAAP (access tim e from col. addr.) in AC C H A R A C T E R I S T I C S .

368006EQS4G07TH

Contextual Info: 8M x 36 Bit 3.3V EDO DIMM Extended Data Out EDO DRAM DIMM 368006EQS4G07TH 100 Pin 8Mx36 EDO DIMM Unbuffered, 4k Refresh, 3.3V Pin Assignment Pin# Pin# 1 Vcc 51 2 DQ0 52 3 DQ1 53 4 DQ2 54 5 DQ3 55 6 Vcc 56 7 DQ4 57 8 DQ5 58 9 DQ6 59 10 DQ7 60 11 CAS0* 61

Contextual Info: ’«YUHDAt * H Y M 5 3 6 8 1 0 A M - S e r ie s 8Mx36-blt CMOS DRAM MODULE DESCRIPTION The HYM536810A is a 8M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII and eight HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin

Contextual Info: M53620800DW0/DB0 M53620810DW0/DB0 DRAM MODULE M53620800DW0/DB0 & M53620810DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5362080(1)0D

KMM5368003BSW

Abstract: KMM5368003BSWG
Contextual Info: DRAM MODULE KMM5368003BSW/BSWG KMM5368003BSW/BSWG Fast Page Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368003B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368003B

4Mx4 dram simm

Contextual Info: M53620800CW0/CB0 M53620810CW0/CB0 DRAM MODULE M53620800CW0/CB0 & M53620810CW0/CB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5362080(1)0C

Contextual Info: DRAM MODULE M53640805BY0/BT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53640805BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.

Contextual Info: Preliminary M53620800DW0/DB0 M53620810DW0/DB0 DRAM MODULE M53620800DW0/DB0 & M53620810DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0D is a 8Mx36bits Dynamic RAM

Contextual Info: DRAM MODULE KMM5368003CSW/CSWG 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5368003CSW/CSWG DRAM MODULE

HMD8M36M18

Abstract: HMD8M36M18G
Contextual Info: HANBit HMD8M36M18G 32Mbyte 8Mx36 72-pin FP with Parity MODE 2K Ref. SIMM Design 5V Part No. HMD8M36M18, HMD8M36M18G GENERAL DESCRIPTION The HMD8M36M18G is a 8M x 36bit dynamic RAM high density memory module. The module consists of sixteen CMOS 4M x 4bit DRAM in 24-pin SOJ packages and two CMOS 4Mx 4bit Quad-CAS DRAM in 28pin SOJ packages

simm EDO 72pin

Abstract: HMD8M36M24EG edo dram 72-pin simm 4 m edo dram 50ns 72-pin simm ess u17
Contextual Info: HANBit HMD8M36M24EG 32Mbyte 8Mx36 72-pin EDO with Parity MODE 2K Ref. SIMM Design 5V Part No. HMD8M36M24EG GENERAL DESCRIPTION The HMD8M36M24EG is a 8M x 36bit dynamic RAM high density memory module. The module consists of twenty four CMOS 4M x 4bit DRAM in 24-pin SOJ packages mounted on a 72 -pin, double-sided, FR-4-printed circuit board.

HY5117400B

Abstract: HY514100A HYM536810D HYM536810DM HYM536810DMG
Contextual Info: HYM536810D M-Series 8Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536810D M-Series is a 8Mx36-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ and eight HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed

Contextual Info: DRAM MODULE 32 Mega Byte KMM5368100A1/A1G Fast Page Mode 8Mx36 DRAM SIMM Module, 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM536B100A1 is a 8M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5368100A1 consists of sixteen CMOS

Contextual Info: DRAM MODULE 32 Mega Byte KMM5368103AK/AKG Fast Page Mode 8Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M Quad CAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5368103AK is a 8M bit x 36 Dynamic RAM high density memory module using Parity with 16M Quad CAS DRAM. The Samsung

4Mx4 dram simm

Abstract: 8m x 36 60ns simm
Contextual Info: 8M x 36 Bit 5V ECC EDO SIMM Extended Data Out EDO ECC DRAM SIMM 368056ES52m18JD 72 Pin 8Mx36 EDO SIMM Unbuffered, 2k Refresh, 5V, ECC Mode Pin Assignment General Description Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11

Contextual Info: 8M x 36 Bit 5V EDO SIMM Extended Data Out EDO DRAM SIMM 368006ES52m24JL 72 Pin 8Mx36 EDO SIMM Unbuffered, 1k Refresh, 5V Pin Assignment General Description Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11 PD5 12 A0 13 A1 14

KMM5368105BK

Abstract: EZ 648
Contextual Info: KMM5368005BK/BKG KMM5368105BK/BKG DRAM MODULE KMM5368005BK/BKG & KMM5368105BK/BKG Fast Page with EDO Mode 8Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS EDO DRAM FEATURES G EN ERA L D ESCRIPTIO N The Samsung KM M 53680 1 05BK is a 8M b it x 36 • Part Identification